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Voltage tuning of thermal spin current in ferromagnetic tunnel contacts to semiconductors
Jeon, Kun-Rok,Min, Byoung-Chul,Spiesser, Aurelie,Saito, Hidekazu,Shin, Sung-Chul,Yuasa, Shinji,Jansen, Ron Nature Publishing Group, a division of Macmillan P 2014 NATURE MATERIALS Vol.13 No.4
Spin currents are paramount to manipulate the magnetization of ferromagnetic elements in spin-based memory, logic and microwave devices, and to induce spin polarization in non-magnetic materials. A unique approach to create spin currents employs thermal gradients and heat flow. Here we demonstrate that a thermal spin current can be tuned conveniently by a voltage. In magnetic tunnel contacts to semiconductors (silicon and germanium), it is shown that a modest voltage (~200 mV) changes the thermal spin current induced by Seebeck spin tunnelling by a factor of five, because it modifies the relevant tunnelling states and thereby the spin-dependent thermoelectric parameters. The magnitude and direction of the spin current is also modulated by combining electrical and thermal spin currents with equal or opposite sign. The results demonstrate that spin-dependent thermoelectric properties away from the Fermi energy are accessible, and open the way towards tailoring thermal spin currents and torques by voltage, rather than material design.
Jeon, Kun-Rok,Min, Byoung-Chul,Park, Seoung-Young Institute of Pure and Applied Physics 2017 Japanese Journal of Applied Physics Vol. No.
<P>Electrical spin accumulation that was robust against changes in temperature and bias voltage was achieved in epitaxial Co70Fe30/MgO tunnel contacts to p-type Ge, with negligible Schottky barrier formation. Hanle and inverted Hanle effects, which are characteristic features of non-equilibrium spin accumulation in the tunnel contacts, were clearly observed up to room temperature for both hole spin injection and extraction. Notably, the obtained spin signal showed weak temperature dependence even at a low bias voltage, and symmetric behavior with respect to bias polarity, which are inconsistent with spin-polarized tunneling via localized states in the contact. (c) 2017 The Japan Society of Applied Physics</P>
Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature
Jeon, Kun-Rok,Min, Byoung-Chul,Jo, Young-Hun,Lee, Hun-Sung,Shin, Il-Jae,Park, Chang-Yup,Park, Seung-Young,Shin, Sung-Chul American Physical Society 2011 Physical review. B, Condensed matter and materials Vol.84 No.16
DS-CDMA 셀룰러 시스템에서 핸드오프 유형별 제공률 분석 및 성능 개선 방법
권수근,전형구,조경록,Kwon, Soo-Kun,Jeon, Hyoung-Goo,Cho, Kyung-Rok 대한전자공학회 1998 電子工學會論文誌, S Vol.s35 No.9
본 논문에서는 멀티 주파수채널을 사용하는 DS-CDMA 셀룰러 시스템에서 제공되는 두가지 핸드오프(하드핸드오프, 소프트 핸드오프)의 제공률을 분석하고 이에 따른 핸드오프 성능 개선 방법을 제안한다. 제안된 방식은 전송지연에 민감한 서비스에 대해 핸드오프 처리시 전송 에러가 많이 발생하는 하드 핸드오프 제공률을 줄이기 위한 방법이다. 전송지연에 민감한 호의 핸드오프 발생시 소프트 핸드오프 제공이 불가능한 경우 해당 주파수채널을 사용중인 전송지연 허용 호를 기지국내의 다른 주파수채널로 핸드오프 시키고 여기에서 발생한 자원을 사용하여 전송지연에 민감한 호의 소프트 핸드오프를 제공해 준다. 컴퓨터 시뮬레이션을 통해 제안된 방식의 성능을 분석하였다. In this paper, we analyze the probability of soft handoff and hard handoff which served in DS-CDMA cellular system, and propose a new handoff control scheme. The object of proposed scheme is to reduce the hard handoff probability of delay sensitive calls which are very sensitive to transmission errors. In this scheme, if soft handoff is not possible, for a delay sensitive call, a delay insensitive call using the same frequency channel that a handoff call is using is handed off to one of other frequency channels and the traffic channel released by delay insensitive call's handoff is assigned to a delay sensitive call for soft handoff. A performance of the proposed scheme was evaluated through computer simulation.