http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Electron penetration depth in amorphous AlN exploiting the luminescence of AlN:Tm/AlN:Ho bilayers
M. Maqbool,M.E. Kordesch,I. Ahmad 한국물리학회 2009 Current Applied Physics Vol.9 No.3
The penetration depth of electron in amorphous aluminum nitride (AlN) is determined in terms of energy loss per unit length using electron beam in a cathodoluminescence (CL) apparatus. Thin films bilayers of holmium doped aluminum nitride (AlN:Ho) and thulium doped aluminum nitride (AlN:Tm) are deposited on silicon substrates by rf magnetron sputtering method at liquid nitrogen temperatures. The bilayers structure consisted of a 37.8 nm thick AlN:Tm film on the top of a 15.3 nm thick AlN:Ho film. Electron beam of different energies are allowed to penetrate the AlN:Tm/AlN:Ho bilayers film. The spectroscopic properties of AlN:Ho and AlN:Tm, the thickness of the film and the energies of electron beam are used to calculate the penetration depth of electron in amorphous AlN. Electron beam of 2.5 keV energy was able to pass through the 37.8 nm thick AlN:Tm film. The electron penetration depth for AlN is found to be 661.4 MeV/cm. The penetration depth of electron in amorphous aluminum nitride (AlN) is determined in terms of energy loss per unit length using electron beam in a cathodoluminescence (CL) apparatus. Thin films bilayers of holmium doped aluminum nitride (AlN:Ho) and thulium doped aluminum nitride (AlN:Tm) are deposited on silicon substrates by rf magnetron sputtering method at liquid nitrogen temperatures. The bilayers structure consisted of a 37.8 nm thick AlN:Tm film on the top of a 15.3 nm thick AlN:Ho film. Electron beam of different energies are allowed to penetrate the AlN:Tm/AlN:Ho bilayers film. The spectroscopic properties of AlN:Ho and AlN:Tm, the thickness of the film and the energies of electron beam are used to calculate the penetration depth of electron in amorphous AlN. Electron beam of 2.5 keV energy was able to pass through the 37.8 nm thick AlN:Tm film. The electron penetration depth for AlN is found to be 661.4 MeV/cm.