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Nanocrystalline silicon carbide films for solar photovoltaics: The role of dangling-bond defects
Lim, Koeng Su,Shevaleevskiy, Oleg De Gruyter 2008 Pure and Applied Chemistry Vol.80 No.10
<P>Thin films of microcrystalline hydrogenated silicon (µc-Si:H) and nanocrystalline silicon carbide (nc-SiC:H) provide a new class of advanced nanostructured materials for solar photovoltaic (PV) devices. We have worked on the fabrication, characterization, and application of these materials for thin film PV solar cells based on amorphous silicon. Here we present an overview of the preparation and characterization methods for heterogeneous SiC:H-based layers. Hydrogenated nc-SiC:H thin film materials with high crystalline volume fraction were deposited using photo-assisted chemical vapor deposition (photo-CVD) technique. The behavior of spin-containing dangling-bond (DB) defects was performed using electron spin resonance (ESR) and transport measurements as a function of sample crystallinity, doping level, and temperature. The electronic and structural properties of intrinsic and doped µc-Si:H and nc-SiC:H thin films are reviewed with the emphasis of the essential role of DB defects on the photoelectronic transport parameters.</P>
The a-Si:H/poly-Si Heterojunction Solar Cells
Sang-Su Kim,Do-Young Kim,Dong-Gun Lim,Junsin Yi,Jae-Choon Lee,Koeng-Su Lim 한국정보과학회 1997 Journal of Electrical Engineering and Information Vol.2 No.5
We present heterojunction solar cells with a structure of metal/a-Si:H (n-i-p)/poly-Si (n-p)/metal for the terrestrial applications. This cell consists of two component cells: a top n-i-p junction a-Si:H cell with wide-bandgap 1.8eV and a bottom n-p junction poly-Si cell with narrow-bandgap 1.1eV. The efficiency influencing factors of the solar cell were investigated in terms of simulation and experiment. Three main topics of the investigated study were the bottom cell with n-p junction poly-Si, the top a-Si:H cell with n-i-p junction, and the interface layer effects of heterojunction cell. The efficiency of bottom cell was improved with a pretreatment temperature of 900℃, surface polishing, emitter thickness of 0.43㎛, top Yb metal, and grid finger shading of 7% coverage. The process optimized cell showed a conversion efficiency about 16%. Top cell was grown by using a photo-CVD system which gave an ion damage free and good p/i-a-Si:H layer interface. The heterojunction interface effect was examined with three different surface states; a chemical passivation, thermal oxide passivation, and Yb metal. The oxide passivated cell exhibited the higher photocurrent generation and better spectral response.
임굉수(Lim, Koeng Su),곽중환(Kwak, Joong Hwan),권성원(Kwon, Seong Won),명승엽(Myong, Seung Yeop) 한국신재생에너지학회 2005 한국신재생에너지학회 학술대회논문집 Vol.2005 No.06
We have developed highly stabilized (p-i-n)-type protocrystalline silicon (pc-Si:H) multilayer solar cells. To achieve a high conversion efficiency, we applied a double-layer p-type amorphous silicon-carbon alloy (p-a-Si_{1-x}C_x:H) structure to the pc-Si:H multilayer solar cells. The less pronounced initial short wavelength quantum efficiency variation as a function of bias voltage proves that the double (p-a-Si_{1-x}C_x:H) layer structure successfully reduces recombination at the p/i interface. It was found that a natural hydrogen treatment involving an etch of the defective undiluted p-a-SiC:H window layer before the hydrogen-diluted p-a-SiC:H buffer layer deposition and an improvement of the order in the window layer. Thus, we achieved a highly stabilized efficiency of 9.0% without any back reflector.
Baik, Seung Jae,Lim, Koeng Su,Choi, Wonsup,Yoo, Hyunjun,Lee, Jang-Sik,Shin, Hyunjung Royal Society of Chemistry 2011 Nanoscale Vol.3 No.6
<P>Charge decay and lateral spreading properties were characterized by modified electrostatic force microscopy (EFM) under a high vacuum at elevated temperatures. Variations in the charge profiles were modeled with the maximum charge density (<I>ρ</I><SUB>m</SUB>) and the lateral spreading distance (Δ<SUB><I>s</I></SUB>), as extracted from the EFM potential line profiles. The scaling limitation of nitride trap memory is discussed based on the projected lateral spreading distances for holes and electrons, which were determined to be approximately 18 nm and 12 nm, respectively, at room temperature.</P> <P>Graphic Abstract</P><P>Charge decay and lateral spreading properties of nitride/oxide/Si (NOS) were characterized by modified electrostatic force microscopy (EFM) under a high vacuum at elevated temperatures (250–450 °C). The projected lateral spreading distances at room temperature were estimated to be 12 nm for electrons and 18 nm for holes. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c1nr10104h'> </P>