http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
State-of-the-Art OMCVD-Grown HEMT's With 200 GHz CapabiIity
Chough,K. B.,Hong,W. P.,Caneau,C.,Lin,P. S. D.,Song,J. I. 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
The performance of 0.15 ㎛ gate InAlAs/InGaAs HEMT's grown by OMCVD is reported The HFMT layer structure exhibited excellent transport properties, indicating the high quality of heterointerface. Hall mobilities of the device .structure were 17,900 and 52,800 ㎠/V-s with carrier concentrations of 3.1x10^(12) and 3.3x10^(12) cm^(-3) at 300 and 77 K, respectively. The devices fabricated using α 0.15㎛-long T=gate process showed a performance of f_T of as high as 200 GHz and f_(max) of 230 GHz extrapolated from 26 GHz at - 6 dB/octave. These are the best speed characteristics of any OMCVD-grown FETs. The results clearly demonstrate that OMCVD is a powerful growth technique for materials for high-speed applications.