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Edge profile measurements using Thomson scattering on the KSTAR tokamak.
Lee, J H,Oh, S,Lee, W R,Ko, W H,Kim, K P,Lee, K D,Jeon, Y M,Yoon, S W,Cho, K W,Narihara, K,Yamada, I,Yasuhara, R,Hatae, T,Yatsuka, E,Ono, T,Hong, J H American Institute of Physics 2014 Review of scientific instruments Vol.85 No.11
<P>In the KSTAR Tokamak, a 'Tangential Thomson Scattering' (TTS) diagnostic system has been designed and installed to measure electron density and temperature profiles. In the edge system, TTS has 12 optical fiber bundles to measure the edge profiles with 10-15 mm spatial resolution. These 12 optical fibers and their spatial resolution are not enough to measure the pedestal width with a high accuracy but allow observations of L-H transition or H-L transitions at the edge. For these measurements, the prototype ITER edge Thomson Nd:YAG laser system manufactured by JAEA in Japan is installed. In this paper, the KSTAR TTS system is briefly described and some TTS edge profiles are presented and compared against the KSTAR Charge Exchange Spectroscopy and other diagnostics. The future upgrade plan of the system is also discussed in this paper.</P>
Revealing distortion of carbon nanotube walls via angle-resolved Xray spectroscopy
M.A. Kanygin,A.V. Okotrub,L.G. Bulusheva,O.Y. Vilkov,K. Hata 한국물리학회 2015 Current Applied Physics Vol.15 No.10
Arrays of aligned single-walled carbon nanotubes (SWCNTs) produced by supergrowth method were studied by scanning electron microscopy (SEM) and angle-resolved near-edge X-ray absorption fine structure spectroscopy, which defined that nanotube disorder is 10e13 and 23e27, respectively. The latter value was confirmed by X-ray fluorescent spectroscopy. The difference in the obtained angular deviations was attributed to distortion of the SWCNT walls, because the X-ray spectroscopy methods are sensitive to a local environment of probing atoms, while the SEM examines the nanotubes at a substantially larger length scale. Significant distortion (20e24) of SWCNT walls could be related to the defects introduced during the growth process.