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Fabrication and characterization of vertically aligned long ZnO nanorods on transparent substrate.
Kar, Jyoti Prakash,Choi, Ji-Hyuk,Das, Sachindra Nath,Xiong, Junjie,Lee, Min-Jung,Lee, Tae Il,Myoung, Jae-Min American Scientific Publishers 2011 Journal of Nanoscience and Nanotechnology Vol.11 No.3
<P>Vertically aligned long ZnO nanorods (NRs) were grown by metal organic chemical vapor deposition (MOCVD) technique. Prior to the NRs growth Ga-doped ZnO (GZO) film was deposited by DC sputtering technique on glass substrates. The length and width of the NRs were 25 microm and 450-500 nm, respectively. Structural and optical properties of the NRs were investigated after the growth. The NRs were single crystalline in nature with the preferred growth along c-axis. The diffusion of Ga atoms in the bottom of the NRs during the growth is detected. A prominent near band edge emission of NRs was observed from room-temperature photoluminescence study. Electrical characteristics across the NRs-thin film hybrid structure were measured with UV exposure, where the rise and fall of the photocurrent was exponential in nature due to the desorption and adsorption of oxygen in the surface.</P>
Manoj Kumar,Jyoti Prakash Kar,In-Soo Kim,최세영,명재민 한국물리학회 2011 Current Applied Physics Vol.11 No.1
A report on the preparation of p-type ZnO thin films, codoped with Al and N, on n-type Si (100) substrate by RF sputtering technique is presented. The as-grown films were found to be n-type and the conduction was converted to p-type on annealing in Ar ambient. ZnO homojunction was fabricated by growing a three-dimensional ZnO hybrid structure of p-type ZnO films, n-type ZnO nanowire and n-type Al-doped ZnO films in order. The current―voltage characteristics clearly showed a diode like rectifying behavior. Room temperature photoluminescence spectra showed dominant peak at 3.20 eV with a broad deep level emission. The electroluminescence spectrum of heterojunction structure exhibited deep level emission at 2.37 eV and ultraviolet emission at 3.20 eV when the injected current attained 100 mA.
Kumar, Manoj,Kar, Jyoti Prakash,Kim, In-Soo,Choi, Se-Young,Myoung, Jae-Min Elsevier 2011 Current Applied Physics Vol.11 No.1
<P><B>Abstract</B></P><P>A report on the preparation of p-type ZnO thin films, codoped with Al and N, on n-type Si (100) substrate by RF sputtering technique is presented. The as-grown films were found to be n-type and the conduction was converted to p-type on annealing in Ar ambient. ZnO homojunction was fabricated by growing a three-dimensional ZnO hybrid structure of p-type ZnO films, n-type ZnO nanowire and n-type Al-doped ZnO films in order. The current–voltage characteristics clearly showed a diode like rectifying behavior. Room temperature photoluminescence spectra showed dominant peak at 3.20 eV with a broad deep level emission. The electroluminescence spectrum of heterojunction structure exhibited deep level emission at 2.37 eV and ultraviolet emission at 3.20 eV when the injected current attained 100 mA.</P>
Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric
Choi, Ji-Hyuk,Lee, Sung Won,Kar, Jyoti Prakash,Das, Sachindra Nath,Jeon, Joohee,Moon, Kyeong-Ju,Lee, Tae Il,Jeong, Unyong,Myoung, Jae-Min Royal Society of Chemistry 2010 Journal of materials chemistry Vol.20 No.35
<P>We suggested a facile route to fabricate top-gate random network devices of ZnO nanorods (NRs) embedded in an ion-gel dielectric layer. This route can be used for large-scale integration of ZnO NR networks. The transistors showed very good performances with low operational voltages, high field-effect mobility (∼1.63 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>), and a greatly enhanced on/off ratio (∼10<SUP>4</SUP>). The ion-gel dielectric provided strong electrostatic doping in ZnO NRs that led to ohmic contact between ZnO and the Au electrode. A high-performance (gain ∼12) complementary inverter was demonstrated by integrating an n-type ZnO NR network device and a p-type device based on electrospun poly(3-hexylthiophene) (P3HT) nanofibers.</P> <P>Graphic Abstract</P><P>The simple process demonstrated in the manuscript can be immediately combined with printing techniques to achieve solution-processed high performance transistors <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c0jm01313g'> </P>
A multifunctional nanoporous layer created on glass through a simple alkali corrosion process
Xiong, Junjie,Das, Sachindra Nath,Kar, Jyoti Prakash,Choi, Ji-Hyuk,Myoung, Jae-Min Royal Society of Chemistry 2010 Journal of materials chemistry Vol.20 No.45
<P>Transparency of the glass substrate plays an important role in the performance of many optical and electronic devices. Herein, the authors have demonstrated a simple method to create a high performance wide–range anti-reflection layer on a glass surface by “carving” it with a hot alkali solution (95 °C). Morphology, composition, surface and optical properties were controlled by changing both the original composition of the glass substrates and etching time. Enhanced transparency (up to 97.7%) was achieved in a wide wavelength range. Superhydrophilic and antifogging properties were also demonstrated, which provide an advantage for optical and opto-electrical devices operating outdoors, in high humidity environments or underwater. In addition, the etched glass surfaces were modified to become hydrophobic (even superhydrophobic) by n-octadecyltrichlorosilane treatment. The glass etching mechanism was investigated and verified using energy dispersive spectra (EDS) and Fourier transform infrared (FTIR) absorption spectra analyses.</P> <P>Graphic Abstract</P><P>Nanoporous layer created on a glass surface by a simple alkali etching process demonstrates high transparency, low reflectance, superhydrophilic and antifogging properties. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c0jm01695k'> </P>
Electrical Contact Tunable Direct Printing Route for a ZnO Nanowire Schottky Diode
Lee, Tae Il,Choi, Won Jin,Kar, Jyoti Prakash,Kang, Youn Hee,Jeon, Joo Hee,Park, Jee Ho,Kim, Youn Sang,Baik, Hong Koo,Myoung, Jae Min American Chemical Society 2010 Nano letters Vol.10 No.9
<P>Although writing was the first human process for communication, it may now become the main process in the electronics industry, because in the industry the programmability as an inherent property is a necessary requirement for next-generation electronics. As an effort to open the era of writing electronics, here we show the feasibility of the direct printing of a high-performance inorganic single crystalline semiconductor nanowire (NW) Schottky diode (SD), including Schottky and Ohmic contacts in series, using premetallization and wrapping with metallic nanofoil. To verify the feasibility of our process, SDs made of Al-premetalized ZnO NWs and plain ZnO NWs were compared with each other. Even with cold direct printing, the Al-premetalized ZnO NW SD showed higher performance, specifically 1.52 in the ideality factor and 1.58 × 10<SUP>5</SUP> in its rectification ratio.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-9/nl101684c/production/images/medium/nl-2010-01684c_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl101684c'>ACS Electronic Supporting Info</A></P>
ZnO 나노선과 P3HT 폴리머를 이용한 유/무기 복합체 TFT 소자
문경주,최지혁,명재민,Moon, Kyeong-Ju,Choi, Ji-Hyuk,Kar, Jyoti Prakash,Myoung, Jae-Min 한국재료학회 2009 한국재료학회지 Vol.19 No.1
Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.
Programmable Direct-Printing Nanowire Electronic Components
Lee, Tae Il,Choi, Won Jin,Moon, Kyeong Ju,Choi, Ji Hyuk,Kar, Jyoti Prakash,Das, Sachindra Nath,Kim, Youn Sang,Baik, Hong Koo,Myoung, Jae Min American Chemical Society 2010 NANO LETTERS Vol.10 No.3
<P>In order for recently developed advanced nanowire (NW) devices<SUP>1−5</SUP> to be produced on a large scale, high integration of the separately fabricated nanoscale devices into intentionally organized systems is indispensible. We suggest a unique fabrication route for semiconductor NW electronics. This route provides a high yield and a large degree of freedom positioning the device on the substrate. Hence, we can achieve not only a uniform performance of Si NW devices with high fabrication yields, suppressing device-to-device variation, but also programmable integration of the NWs. Here, keeping pace with recent progress of direct-writing circuitry,<SUP>6−8</SUP> we show the flexibility of our approach through the individual integrating, along with the three predesigned N-shaped sites. On each predesigned site, nine bottom gate p-type Si NW field-effect transistors classified according to their on-current level are programmably integrated.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-3/nl904190y/production/images/medium/nl-2009-04190y_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl904190y'>ACS Electronic Supporting Info</A></P>