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Enhanced Haze Ratio on Glass by Novel Vapor Texturing Method
Lee, Seunghwan,Balaji, Nagarajan,Ju, Minkyu,Park, Cheolmin,Kim, Jungmo,Chung, Sungyoun,Lee, Youn-Jung,Yi, Junsin American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.5
<P>State-of-the-art optical trapping designs are required to enhance the light trapping capabilities of tandem thin film silicon solar cells. The wet etch process is used to texture the glass surface by dipping in diluted acidic solutions such as HNO3 (nitric acid) and HF (hydrofluoric acid). For vapor texturing, the vapor was generated by adding silicon to HF:HNO3 acidic solution. The anisotropic etching of vapor textured wafers resulted in an etching depth of about 2.78 mu m with reduced reflectance of 5%. We achieved a high haze value of 74.6% at a 540 nm wavelength by increasing the etching time and HF concentration.</P>
Role of the buffer solution in the chemical deposition of CdS films for CIGS solar cell applications
Lee, Sooho,Kim, Donguk,Baek, Dohyun,Hong, Byoungyou,Yi, Junsin,Lee, Jaehyeong,Park, Yong Seob,Choi, Wonseok Korean Physical Society 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.10
In this work, the effects of NH4Ac on the structural and the electro-optical properties of CdS films were investigated. CdS thin films were deposited on soda-lime glass and indium-tin-oxide (ITO) coated glass from a chemical bath containing 0.025 M cadmium acetate, 0 M similar to 0.2 M ammonium acetate, 0.5 M thiourea, and ammonia. Cadmium acetate was the cadmium source, ammonium acetate served as a buffer, ammonia was the complexing agent, and thiourea was the source of sulfur. A commonl- available chemical bath deposition system was successfully modified to obtain precise control over the pH of the solution at 75 A degrees C during the deposition. Chemically deposited CdS films were studied by using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), optical transmittance, and electrical resistivity measurements.
Lee, Youngseok,Gong, Daeyeong,Balaji, Nagarajan,Lee, Youn-Jung,Yi, Junsin Springer 2012 Nanoscale research letters Vol.7 No.1
<P>Double stack antireflection coatings have significant advantages over single-layer antireflection coatings due to their broad-range coverage of the solar spectrum. A solar cell with 60-nm/20-nm SiN<SUB>X</SUB>:H double stack coatings has 17.8% efficiency, while that with a 80-nm SiN<SUB>X</SUB>:H single coating has 17.2% efficiency. The improvement of the efficiency is due to the effect of better passivation and better antireflection of the double stack antireflection coating. It is important that SiN<SUB>X</SUB>:H films have strong resistance against stress factors since they are used as antireflective coating for solar cells. However, the tolerance of SiN<SUB>X</SUB>:H films to external stresses has never been studied. In this paper, the stability of SiN<SUB>X</SUB>:H films prepared by a plasma-enhanced chemical vapor deposition system is studied. The stability tests are conducted using various forms of stress, such as prolonged thermal cycle, humidity, and UV exposure. The heat and damp test was conducted for 100 h, maintaining humidity at 85% and applying thermal cycles of rapidly changing temperatures from -20°C to 85°C over 5 h. UV exposure was conducted for 50 h using a 180-W UV lamp. This confirmed that the double stack antireflection coating is stable against external stress.</P>
Lee, Jonghwan,Park, Cheolmin,Dao, Vinh Ai,Lee, Youn-Jung,Ryu, Kyungyul,Choi, Gyuho,Kim, Bonggi,Ju, Minkyu,Jeong, Chaehwan,Yi, Junsin American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.11
<P>In this paper, we present a detailed study on the local back contact (LBC) formation of rear-surface-passivated silicon solar cells, where both the LBC opening and metallization are realized by one-step alloying of a dot of fine pattern screen-printed aluminum paste with the silicon substrate. Based on energy dispersive spectrometer (EDS) and scanning electron microscopy (SEM) characterizations, we suggest that the aluminum distribution and the silicon concentration determine the local-back-surface-field (Al-p+) layer thickness, resistivity of the Al-p+ and hence the quality of the Al-p+ formation. The highest penetration of silicon concentration of 78.17% in aluminum resulted in the formation of a 5 microm-deep Al-p+ layer, and the minimum LBC resistivity of 0.92 x 10-6 omega cm2. The degradation of the rear-surface passivation due to high temperature of the LBC formation process can be fully recovered by forming gas annealing (FGA) at temperature and hydrogen content of 450 degrees C and 15%, respectively. The application of the optimized LBC of rear-surface-passivated by a dot of fine pattern screen(-) printed aluminum paste resulted in efficiency of up to 19.98% for the p-type czochralski (CZ) silicon wafers with 10.24 cm2 cell size at 649 mV open circuit voltage. By FGA for rear-surface passivation recovery, efficiencies up to 20.35% with a V(OC) of 662 mV, FF of 82%, and J(SC) of 37.5 mA/cm2 were demonstrated.</P>
PC1D 시뮬레이션을 이용해 태양전지 효율 최적화를 위한 주요 인자 연구
이기원(Lee, Kiwon),이종환(Lee, Jonghwan),이준신(Yi, Junsin) 한국신재생에너지학회 2011 한국신재생에너지학회 학술대회논문집 Vol.2011 No.11
결정질 실리콘 웨이퍼를 이용한 고효율 태양전지를 제작하기 위해서는 반드시 고려해야 할 주요 인자들이 있다. 그 중에서도 Base resistivity, Thickness, Doping concentration, Texture size, Texture angle등의 주요 인자를 PC1D 시뮬레이션 프로그램을 이용하여 최적화 해 보았다. 그 결과, Base resistivity값은 낮을수록 좋으나 지나치게 낮을 경우 재결합으로 인해 효율이 떨어지기 때문에 Base resistivity = 1{Omega}{cdot}cm에서 최대 효율을 얻을 수 있었다. 또한, Thickness는 두꺼울수록 R={rho}(L/A)의 식에 의해 직렬저항이 증가하여 효율이 감소하므로 Thickness = 200{mu}m 정도가 적정 값임을 확인할 수 있었다. Doping concentration의 경우 높을수록 재결합으로 인해 효율이 떨어지며 Doping concentration = 3.69{times}10^{-20}cm^{-3}에서 가장 좋은 효율을 보였다. Textrure size와 Textrure angle은 그 값이 클수록 빛의 흡수 정도가 증가해 효율이 증가함을 볼 수 있었고 Textrure size = 2{sim}4{mu}m, Texture angle = 79?에서 높은 효율을 보여주었다. 이와 같은 조건에서 고효율 태양전지를 제작을 위한 시뮬레이션을 한 결과, 16.23%의 변환효율을 얻을 수 있었다.
LED적용 TFT-LCD 외관 백색 균일도 향상을 위한 광선 추적 시뮬레이션 연구
이상환(sanhwan Lee),이준신(Junsin Yi),이승재(Seungjae Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
TFT-LCD(Thin Film Transistor Liquid Crystal Display)는 표시장치로서 실용화된 후 많은 상품에 적용중이다. 그러나, LCD는 자체 발광능력이 없으므로 그후면에서 LCD 화면을 밝혀주는 BLU(Backlight Unit)를 필요로 한다. BLU는 내부 광원으로 밝기가 균일한 평면광을 만들어 LCD 화면을 균일하게 연조사하는 역할을 한다. LCD가 적용되는 분야중 Note PC에는 광원으로 CCFL(Cold Cathode Fluorescent Lamp)가 적용되어 왔지만, 최근 고휘도, 박형화, 저소비 전력을 달성하기 위해 CCFL로는 한계가 있어 LED(Light Emitting Diode)를 적용한 BLU를 제작하기 위한 연구가 진행되고 있다. 본연구에서는 점광원인 LED 적용한 LED에 있어서 요구되는 휘도 균일성을 향상시키기 위해서는 LED광원이 적용된 BLU의 외관 품질 향상을 위한 도광판 입광부 구조 최적화를 광추적 Simulation을 통해 예측하고 향상시킬 수 있는 구조를 제안한다. Simulation결과, 외관품질 개선을 위해 도광판 입광면에 130도의 Serration과 휘도를 향상하기 위해 도광판 밑면에 렌즈 형상의 바 구조를 도출해 적용한 결과 외관품질향상과 휘도향상을 얻었다.
Investigation of Electrical and Optical Properties of Highly Transparent TCO/Ag/TCO Multilayer.
Kim, Sunbo,Lee, Jaehyeong,Dao, Vinh Ai,Ahn, Shihyun,Hussain, Shahzada Qamar,Park, Jinjoo,Jung, Junhee,Lee, Chan,Song, Bong-Shik,Choi, Byoungdeog,Lee, Youn-Jung,Iftiquar, S M,Yi, Junsin American Scientific Publishers 2015 Journal of Nanoscience and Nanotechnology Vol.15 No.3
<P>Transparent conductive oxides (TCOs) have been widely used as transparent electrodes for optoelectronic devices, such as solar cells, flat-panel displays, and light-emitting diodes, because of their unique characteristics of high optical transmittance and low electrical resistivity. Among various TCO materials, zinc oxide based films have recently received much attention because they have advantages over commonly used indium and tin-based oxide films. Most TCO films, however, exhibit valleys of transmittance in the wavelength range of 550-700 nm, lowering the average transmittance in the visible region and decreasing short-circuit current (I-sc) of solar cells. A TCO/Ag/TCO multilayer structure has emerged as an attractive alternative because it provides optical characteristics without the valley of transmittance compared with a 100-nm-thick single-layer TCO. In this article, we report the electrical, optical and surface properties of TCO/Ag/TCO. These multi-layers were deposited at room temperature with various Ag film thicknesses from 5 to 15 nm while the thickness of TCO thin film was fixed at 40 nm. The TCO/Ag/TCO multi-layer with a 10-nm-thick Ag film showed optimum transmittance in the visible (400-800 nm) wavelength region. These multi-layer structures have advantages over TCO layers of the same thickness.</P>