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Optimizing of a-IGZO TFT according to Pulse Duty ratio of Pulse-RF and Pulse-DC
Jaewoong Cho,Jaemin Kim,Eun-Chel Cho,Junsin Cho 한국진공학회 2021 한국진공학회 학술발표회초록집 Vol.2021 No.2
During the sputtering process, in the atmosphere of Ar: O2 – 19L 1, it was possible to confirm the change in the characteristics of the Bottom Gate TFT structure according to the plasma duty ratio change, and to find the optimal conditions in each condition of Pulsed-DC and Pulsed-RF. Afterwards, a-IGZO thin film according to each optimized condition was deposited to a thickness of 50 nm on a glass substrate to see the deposition characteristics of the thin film, and the stoichiometric investigation through XPS, surface roughness and optical bandgap through AFM were measured.
조은철(Eun-Chel Cho),조영현(Young Hyun Cho),이준신(Junsin Yi) 한국태양광발전학회 2018 Current Photovoltaic Research Vol.6 No.2
The traditional silicon heterojunction solar cells consist of intrinsic amorphous silicon to prevent recombination of the silicon surface and doped amorphous silicon to transport the photo-generated electrons and holes to the electrode. Back contact solar cells with silicon heterojunction exhibit very high open-circuit voltages, but the complexity of the process due to form the emitter and base at the backside must be addressed. In order to solve this problem, the structure, manufacturing method, and new materials enabling the carrier selective contact (CSC) solar cell capable of achieving high efficiency without using a complicated structure have recently been actively developed. CSC solar cells minimize carrier recombination on metal contacts and effectively transfer charge. The CSC structure allows very low levels of recombination current (eg, Jo < 9fA/cm2), thereby achieves high open-circuit voltage and high efficiency. This paper summarizes the core technology of CSC solar cell, which has been spotlighted as the next generation technology, and is aiming to speed up the research and development in this field.
A Review on Degradation of Silicon Photovoltaic Modules
Hasnain Yousuf,Muhammad Quddamah Khokhar,Muhammad Aleem Zahid,Jaeun Kim,Youngkuk Kim,Sung Bae Cho,Young Hyun Cho,Eun-Chel Cho,Junsin Yi 한국신재생에너지학회 2021 신재생에너지 Vol.17 No.1
Photovoltaic (PV) panels are generally treated as the most dependable components of PV systems; therefore, investigations are necessary to understand and emphasize the degradation of PV cells. In almost all specific deprivation models, humidity and temperature are the two major factors that are responsible for PV module degradation. However, even if the degradation mode of a PV module is determined, it is challenging to research them in practice. Long-term response experiments should thus be conducted to investigate the influences of the incidence, rates of change, and different degradation methods of PV modules on energy production; such models can help avoid lengthy experiments to investigate the degradation of PV panels under actual working conditions. From the review, it was found that the degradation rate of PV modules in climates where the annual average ambient temperature remained low was -1.05% to -1.16% per year, and the degree of deterioration of PV modules in climates with high average annual ambient temperatures was -1.35% to -1.46% per year; however, PV manufacturers currently claim degradation rates of up to -0.5% per year.
Cho, Jaehyun,Iftiquar, S. M.,Kim, Minbum,Park, JinJoo,Jung, Junhee,Kim, Jiwoong,Yi, Junsin American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.5
<P>Intrinsic hydrogenated amorphous silicon-germanium (a-SiGe: H) alloy is generally used in the bottom cell because of its low band gap. The a-SiGe: H has a higher photo conductivity in comparison to the a-Si: H; thus, it is expected that the a-SiGe: H can show better short circuit current density than that of the a-Si: H based solar cell. Therefore, we optimized a-SiGe: H active layer that can be a suitable choice for the front cell of a multi junction solar cell. Furthermore, we carried out a comparative study of the solar cells that have a-SiGe: H and a-Si: H as respective active layers. The a-SiGe: H based solar cells show higher short circuit current density, while the a-Si: H based cells show higher open circuit voltage. The current-voltage characteristics of these cells are as follows: (a) V-oc = 770 mV, J(sc) = 15.0 mA/cm(2), FF = 64.5%, and eta = 7.47% for a-SiGe:H based cell; and (b) V-oc = 826 mV, J(sc) = 13.63 mA/cm(2), FF = 72.0%, and eta = 8.1% for a-Si: H based cell.</P>
조익현,박영,정규원,정세민,이준신,송준태 성균관대학교 1998 학술회의지원논문목록집 Vol.1998 No.-
It was investigated that the dielectric properties of ferroelectric materials using PZT-5A and PZT thin films. PZT-5A was 20mm diameters, 0.71mm 0.51mm and 0.41mm thickness respectively and having c-axis preferred orientation. Electrodes(Al) were deposited by evaporation method. PZT thin film was deposited on Pt/SiO₂/Si substrate by RF magnetron sputtering method and annealed at 750°C with RTA. Dielectric constants were measured automatically by computer measuring system. Dielectric constants were changed rapidly from 817 to 888 in 0.41mm thickness PZT-5A, 823 to 890 in 0.5lmm and 822 to 839 in 0.71mm as the electric field grown. In the case of PZT thin film, dielectric constants were changed from 724 to 1173 in 4500Å thickness, 721 to 1204 in 5500 Å thickness and 811 to 1407 in 7000Å thickness.
Park, Hyeongsik,Cho, Jae Hyun,Jung, Jun Hee,Duy, Pham Phong,Le, Anh Huy Tuan,Yi, Junsin Korea Photovoltaic Society 2017 Current Photovoltaic Research Vol.5 No.3
High efficiency thin film solar cells require an absorber layer with high absorption and low defect, a transparent conductive oxide (TCO) film with high transmittance of over 80% and a high conductivity. Furthermore, light can be captured through the glass substrate and sent to the light absorbing layer to improve the efficiency. In this paper, morphology formation on the surface of glass substrate was investigated by using HF, mainly classified as random etching and periodic etching. We discussed about the etch mechanism, etch rate and hard mask materials, and periodic light trapping structure.
Jung, Junhee,Ha, Kyungyeon,Cho, Jaehyun,Ahn, Shihyun,Park, Hyeongsik,Hussain, Shahzada Qamar,Choi, Mansoo,Yi, Junsin American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.12
<P>The preparation of thin film silicon solar cells containing Ag nanoparticles is reported in this article. Ag nanoparticles were deposited on fluorine doped tin oxide coated glass substrates by the evaporation and condensation method. a-Si:H solar cells were deposited on these substrates by cluster type plasma enhanced chemical vapor deposition. We discuss the double textured surface effect with respect to both the surface morphology of the substrate and the plasmonic effect of the Ag nanoparticles. Ag nanoparticles of various sizes from 10 to 100 nm were deposited. The haze values of the Ag embedded samples increased with increasing particle size whereas the optical transmittance decreased at the same conditions. The solar cell with the 30 nm size Ag nanoparticles showed a short circuit current density of 12.97 mA/cm2, which is 0.53 mA/cm2 higher than that of the reference solar cell without Ag nanoparticles, and the highest quantum efficiency for wavelengths from 550 to 800 nm. When 30 nm size nanoparticles were employed, the conversion efficiency of the solar cell was increased from 6.195% to 6.696%. This study reports the application of the scattering effect of Ag nanoparticles for the improvement of the conversion efficiency of amorphous silicon solar cells.</P>
주필연,조익현,정규원,박영,임동건,이준신,송준태 성균관대학교 2002 학술회의지원논문목록집 Vol.2002 No.-
PZT thin films(35000A) have been prepared onto Pt/Ti/SiO₂/Si substrates with a RF magnetron sputtering system using Pb_(1.05)(Zr_(0.52),Ti_(0.48))O₃ceramic target. We used two-step annealing techniques. As the RTA times and temperatures were increased, crystallization of PZT thin films were enhanced. The ferroelectric characteristics of PZT capacitors fabricated at 700℃ for 60 seconds were like these, remanent polarization were 12.1 μC/㎠, coercive field were 110 kV/cm, leakage current density were 4.1×10^(7) A/㎠, εr - 442, and remanent polarization were decreased by 22% after 10^(10) cycles, respectively.