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Wide Band-gap FETs for High Power Amplifiers
Jinwook Burm,Jaekwon Kim 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.3
Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.
Modified Volterra Series Models for Behavioral Modeling of RF Power Amplifier with Memory Effects
Hoki Kim,Kyunghoon Kim,Jinwook Burm 대한전자공학회 2009 ITC-CSCC :International Technical Conference on Ci Vol.2009 No.7
In this paper, a behavior modeling method which is considered with memory effects of nonlinear RF power amplifiers is proposed. A modeling method distinguished from other simplified modeling methods based Volterra series is presented, which is designed with two blocks. One is the nonlinear block and the other is the linear block. To take into account memory effects, the linear block is designed by using delay taps. Power amplifiers modeled in this paper are WCDMA which used AWT6282 manufactured by ANADIGICS respectively. The data adopted in modeling is based on the collected data in WCDMA 1700㎒ Band measured by a signal analyzer. Modeling is designed with MATLAB program and simulated in Time-domain and Frequency-domain. Using the compensation methods, the proposed model successively predicted the power amplifier behavior within about 2 ㏈ accuracy.