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Kim, Zin-Sig,Lee, Hyung-Seok,Na, Jeho,Bae, Sung-Bum,Nam, Eunsoo,Lim, Jong-Won Elsevier 2018 Solid-state electronics Vol.140 No.-
<P><B>Abstract</B></P> <P>Enhancement-mode transistors with uniform turn-on threshold voltage (V<SUB>th</SUB>) can be achieved using low damage and low rate gate recess etching techniques. In this work, dry etching conditions for a AlGaN/GaN heterostructure with an ultra-low etching rate of 1.5 nm/min were demonstrated and we succeeded the possibility to achieve a low etch rate of an AlGaN/GaN heterostructure in a Cl<SUB>2</SUB>/BCl<SUB>3</SUB> plasma using inductively coupled plasma (ICP). The etching development was successfully implemented in the achievement of a normally-off GaN/AlGaN based transistor. The optimal recess depth was determined after fabrication of various devices with different recess depth values and with various dry etching conditions and after examining the performances of fabricated devices various conditions, and determining the dependence of recess time. The optimized etching condition resulted in low damage and smooth morphology of the etched AlGaN/GaN surfaces. Fine control of the depth of the gate region recess was achieved for the AlGaN/GaN heterostructure without any etch-stop layer, and validated for the fabrication of field effect transistors (FETs) using conventional processes. The fabricated normally-off Al<SUB>2</SUB>O<SUB>3</SUB>/AlGaN/GaN MOSFETs delivered a high positive V<SUB>th</SUB> of +5.64 V with a low off-state leakage current of ∼10<SUP>−7</SUP> A/mm and lower current collapse.</P>
Highly stable Mo/Al bilayer electrode for stretchable electronics
Choi Ji Hun,Park Chan Woo,Na Bock Soon,Yang Jong-Heon,Na Jeho,Pi Jae-Eun,Kim Hee-Ok,Hwang Chi-Sun,Yoo Seunghyup 한국정보디스플레이학회 2023 Journal of information display Vol.24 No.2
Highly-stable molybdenum/aluminum (Mo/Al) bilayered electrodes have been demonstrated as promising candidates for use in stretchable electronics. The serpentine-shaped Mo/Al bilayer electrode is shown to be operable with up to 220% elongation and no significant change in resistance. In Al-only electrodes, Al penetrates into the polyimide (PI) because of its high chemical reactivity with PI. This issue can be overcome by inserting Mo underneath the Al layer, blocking the reaction between Al and PI and enabling the formation of robust and highly conductive stretchable electrodes. With the proposed bilayer electrodes, stretchable thin-film transistor arrays that can be operated even when elongated up to 220% are realized. The fabricated devices exhibit very stable device performance under highly stretched conditions.
Hyun-Soo Lee,Dong Yun Jung,Youngrak Park,Jeho Na,Hyun-Gyu Jang,Hyoung-Seok Lee,Chi-Hoon Jun,Junbo Park,Sang-Ouk Ryu,Sang Choon Ko,Eun Soo Nam IEEE 2015 IEEE electron device letters Vol.36 No.11
<P>A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed dual anode metal and changing the recess depths. The device size and channel width are 4 mm(2) and 63 mm, respectively. The 16-nm recessed dual anode metal SBD has a turn-ON voltage of 0.34 V, a breakdown voltage of 802 V, and a reverse leakage current of 1.82 mu A/mm at -15 V. The packaged SBD exhibits a forward current of 6.2 A at 2 V and a reverse recovery charge of 11.54 nC.</P>
몰리브데넘 기반의 오믹 저항을 이용한 AlGaN/GaN 쇼키 다이오드 특성
김진식(Zin-Sig Kim),이형석(Hyung-Seok Lee),나제호(Jeho Na),고상춘(Sang-Choon Ko),남은수(Eunsoo Nam),임종원(Jong-Won Lim) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
Schottky barrier diodes (SBDs) on AlGaN/GaN heterostructure are one of promising alternatives for high power switching device, because of their high switching speed, low on-resistance and large breakdown voltage. Lots of investigations are performed for the application of AlGaN/GaN SBD for rectifiers or devices in DC-DC converters and inverters. In this work, we investigated the optimal conditions of Mo-based ohmic contact for fabrication of AlGaN/GaN SBD devices, and characterized the fabricated AlGaN/GaN SBD devices using optimized ohmic condition with Mo-based ohmic metal..
Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface
Kim, Taeyoon,Lim, Jung Wook,Lee, Seong Hyun,Na, Jeho,Jeong, Jiwoon,Jung, Kwang Hoon,Kim, Gayoung,Yun, Sun Jin American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.31
<P>A new concept of a tunneling oxide-free nonvolatile memory device with a deep trap interface floating gate is proposed. This device demonstrates a high on/off current ratio of 10<SUP>7</SUP> and a sizable memory window due to deep traps at the interface between the channel and gate dielectric layers. Interestingly, irradiation with 400 nm light can completely restore the program state to the initial one (performing an erasing process), which is attributed to the visible light-sensitive channel layer. Device reproducibility is enhanced by selectively passivating shallow traps at the interface using in situ H<SUB>2</SUB> plasma treatment. The passivated memory device shows highly reproducible memory operation and on-state current during retention bake tests at 85 °C. One of the most significant advantages of this visible light-erasable oxide field-effect transistor-based nonvolatile memory is its simple structure, which is free from deterioration due to the frequent tunneling processes, as compared to conventional nonvolatile memory devices with tunneling oxides.</P> [FIG OMISSION]</BR>