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Simple Model for 1/f Noise in Polycrystalline Silicon Thin-Film Transistors
정일 이,Alain Chovet,Hwe-Jong Kim,한일기,Jean Brini,최원준,조운조,Young-Ju Park 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We present a simple and novel model for low-frequency excess noise in polycrystalline silicon thin-film transistors. In the model, the grain boundary is considered as a symmetric Schottky barrier and the noise generation mechanisms for both mobility fluctuation and number fluctuation in a Schottky barrier are taken into account. Analysis of the experimental results shows that carrier number fluctuation by barrier height modulation involving thermal activation at bulk trap states in the depletion layer of the grain boundary is found to be responsible for 1/f noise at lower currents. Mobility fluctuation prevails at higher current, due to the increased Hooge parameter and the lack of noise sources for carrier number fluctuation.