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Charging Compensation Layer on Polyimide for Enhanced Device Stability in Flexible Technology
Hyojung Kim,Jongwoo Park,Jungmin Park,Hyuntaek Woo,Jongyoon Lee,Yoonsoo Park,Taeyoung Khim,Junehwan Kim,Jaeseob Lee,Jangkun Song,Byoungdeog Choi 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.3
In this paper, we propose a structure that prevents the charging eff ects that occur in devices fabricated on polyimide (PI)substrates. In general, when fabricating a device on a PI substrate, an inorganic barrier layer is fi rst deposited to preventpenetration of oxygen and moisture. In this study, we confi rmed that fl uorine ions were induced from PI by bias stress andproposed a SiOCH/SiO 2 double layer as a barrier to prevent charging. Then, Al/PI/SiO 2 /Al and Al/ PI/SiOCH/SiO 2 /Al metal–insulator–metal capacitors were manufactured. The capacitor characteristics before and after application of bias stress wereverifi ed through current–voltage (I–V) and capacitance–voltage (C–V), which are electrical characterization methods, andsecondary ion mass spectrometry (SIMS), which is a physical analysis method. As the voltage increased, the capacitance andcurrent of the Al/PI/SiO 2 /Al capacitor varied, but those of the Al/PI/SiOCH/SiO 2 /Al device did not change. Finally, SIMSanalysis confi rmed that the PI-derived fl uorine ions replaced the Si–CH 3 bonds within the SiOCH fi lm with Si–F bonds,thereby preventing capacitance and current fl uctuations.
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