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Schottky Nature of Au/SnO<sub>2</sub> Ultrathin Film Diode Fabricated Using Sol–Gel Process
Jang, Bongho,Kim, Taegyun,Lee, Sojeong,Lee, Won-Yong,Jang, Jaewon IEEE 2018 IEEE electron device letters Vol.39 No.11
<P>In this letter, sol–gel-processed SnO<SUB>2</SUB> films were deposited, with thicknesses varying from 3.5 to 5.0 nm, by controlling the concentration of the precursor solutions. Through electrical and spectroscopic investigations, it was found that the optical energy bandgap and the electron affinity were affected by the quantum confinement effect and Burstein–Moss effect. Moreover, the increased barrier height between Au and SnO<SUB>2</SUB> semiconductors was enhanced when thinner SnO<SUB>2</SUB> layers were used, resulting in strong Schottky diode characteristics. This letter allows one to examine the size scaling effects of ultrathin electrical devices with SnO<SUB>2</SUB> channel layers. In addition, a generalized energy band diagram derived from the bandgap broadening in ultrathin SnO<SUB>2</SUB> semiconductors is presented, which will allow the elucidation of the carrier transport mechanism and optical properties of quantum confined SnO<SUB>2</SUB> semiconductor-based optical and electrical devices.</P>
Jang, Kwonho,Lee, In-yeal,Xu, Juan,Choi, Jaewon,Jin, Jaewon,Park, Ji Hoon,Kim, Hae Jin,Kim, Gil-Ho,Son, Seung Uk American Chemical Society 2012 Crystal Growth & Design Vol.12 No.7
<P>Through tin precursor chemistry, SnSe nanocrystals were phase-selectively prepared. Monomeric N-heterocyclic stannylene, [Me<SUB>2</SUB>Si(N<SUP>t</SUP>Bu)<SUB>2</SUB>Sn:], having lone pair electrons, was prepared by a literature method, and it had a direct reactivity toward selenium powder. The resultant dimerized compound with a 1:1 stoichiometric ratio of Sn to Se was used as a precursor to synthesize tin selenides. Thermolysis of the precursor solution in oleylamine resulted in SnSe plates. The oriented attachment of SnSe plates through (100) crystalline planes formed the SnSe nanocolumns, which were characterized by SEM, TEM, PXRD, EDS, and XPS. The indirect band gap of the SnSe nanocolumns was red-shifted, compared with those of SnSe plates. The SnSe nanocolumns showed an increased photocurrent under visible light irradiation. We believe that similar precursor chemistry in this work can be further extended to group IVA elements.</P><P>Through tin precursor chemistry, SnSe nanocrystals were phase-selectively prepared. The oriented attachment of SnSe plates through (100) crystalline planes formed SnSe nanocolumns that showed promising optoelectrical properties under visible light irradiation.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/cgdefu/2012/cgdefu.2012.12.issue-7/cg300579k/production/images/medium/cg-2012-00579k_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/cg300579k'>ACS Electronic Supporting Info</A></P>
Jang, Jaewon,Pan, Feng,Braam, Kyle,Subramanian, Vivek WILEY‐VCH Verlag 2012 Advanced Materials Vol.24 No.26
<P><B>Solution‐processed mechanically flexible resistive random access memories</B> are fabricated using Ag<SUB>2</SUB>Se nanoparticles; the fabricated Ag/Ag<SUB>2</SUB>Se/Au memory devices on flexible poly‐ethylene‐naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 10<SUP>5</SUP> s, and no degradation in endurance after 10<SUP>4</SUP> switching cycles, with stable operation even under a mechanical strain of 0.38%.</P>
Chain-Based Approach for Fast Through-Silicon-Via Coupling Delay Estimation
Jang, Jaewon,Cheong, Minho,Ahn, Jin-Ho,Lim, Sung Kyu,Kang, Sungho IEEE 2017 IEEE transactions on very large scale integration Vol.25 No.3
<P>A chain-based coupling delay estimation method for through-silicon-vias (TSVs) in 3-D integrated circuits is proposed. Existing works target the worst case scenarios and this leads to inaccurate TSV coupling delay estimations, as the worst case may not occur during normal operation. The proposed method calculates the TSV coupling delay using simulation-based switching data. In addition, our TSV chain method allows us to capture the effects of nonneighboring TSVs accurately. Our simulations show that the error introduced by our method without using HSPICE is less than 10 ps even in TSV-crowded regions.</P>
High Performance Ultrathin SnO<sub>2</sub> Thin-Film Transistors by Sol–Gel Method
Jang, Bongho,Kim, Taegyun,Lee, Sojeong,Lee, Won-yong,Kang, Hongki,Cho, Chan Seob,Jang, Jaewon IEEE 2018 IEEE electron device letters Vol.39 No.8
<P>Sol–gel processed ultrathin nanostructured SnO<SUB>2</SUB> thin-film transistors were successfully fabricated on a SiO<SUB>2</SUB>/Si substrate without using a self-aligned monolayer or high- <TEX>${k}$</TEX> insulator, which may be unsuitable techniques for the commercial fabrication of complementary metal–oxide–semiconductors. The highest extracted field mobility was approximately 100 cm<SUP>2</SUP>/V <TEX>$\cdot$</TEX>s. In addition, by controlling the SnO<SUB>2</SUB> film thickness, we successfully increased the on/off current ratio to ~10<SUP>7</SUP>. The electrical performance of the proposed transistors is sufficient for high-resolution liquid crystal or organic light-emitting diode displays, which require a high field-effect mobility (>10 cm<SUP>2</SUP>/V <TEX>$\cdot$</TEX>s) and high on/off current ratio (>10<SUP>6</SUP>). Ultrathin SnO<SUB>2</SUB> is also a promising rare-metal-free starting matrix for ternary and quaternary alloys, showing promising electric properties.</P>
Clinical Characteristics of Non-Alcoholic Fatty Liver Patients with Antinuclear Antibody Positivity
( Jaewon Park ),( Gwang Hyeon Choi ),( Kyunghan Lee ),( Sangmi Jang ),( Woo Jin Jung ),( Won Joon Choi ),( Eun Sun Jang ),( Jin-wook Kim ),( Sook-hyang Jeong ) 대한간학회 2020 춘·추계 학술대회 (KASL) Vol.2020 No.1
Aims: For the diagnosis of nonalcoholic fatty liver disease (NAFLD), autoantibodies are tested to exclude autoimmune liver disease, and clinical significance of the autoantibodies found in NAFLD patients was not clear. The aim of this study were to investigate the positive rate of antinuclear antibody (ANA) in NAFLD patients, and to compare clinical characteristics between ANA-positive and ANA-negative group of NAFLD. Methods: We retrospectively enrolled patients who have diagnosed as NAFLD and underwent ANA test between 2003 and 2019 in a Korean tertiary hospital by searching the clinical data warehouse. After exclusion of autoimmune diseases and combined alcoholic liver diseases, clinical characteristics of ANA-positive group were compared to those of ANA negative group using 1:1 Propensity matching. Results: Among 966 NAFLD patients (464 males and 472 females), the ANA positive rate was 10.6% . ANA positive group (n=99) showed higher mean age (55.9 years vs. 50.2 years, P=0.0002), and higher proportion of female (64.6% vs. 48.7%, P=0.0028), lower albumin (4.4g/dL vs 4.5g/dL, P=0.0210), and higher globulin level (3.0g/dL vs 2.9g/dL, P<0.0001), higher fibrosis score of FIB-4(1.8 vs 1.4, P<0.0001), APRI(0.6 vs 0.5, P=0.0272), and NFS(-1.3 vs -1.6, P=0.0123), and higher value in transient elastography (7.3kPa vs. 6.0kPa, P=0.0295) than ANA negative group. After propensity matching based on age and sex between ANA positive group and ANA negative group, ANA positive group showed higher in mean globulin level (3.0g/dL vs. 2.8g/dL, P=0.0034), IgG level (1342 mg/dL vs. 1237 mg/dL, P=0.0379), higher FIB-4 score(1.8 vs 1.6, P=0.0358), and higher value in transient elastography (7.3kPa vs. 5.8kPa, P=0.0408). Conclusions: The ANA positivity in NAFLD was 10.6%, and it was related to higher level of immunoglobulin and higher degree of fibrosis. Further study on the mechanism of autoantibody production and progression of NAFLD is warranted.