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Um, Jae Gwang,Mativenga, Mallory,Migliorato, Piero,Jang, Jin American Institute of Physics 2014 JOURNAL OF APPLIED PHYSICS - Vol.115 No.13
<P>We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 degrees C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 degrees C. (C) 2014 AIP Publishing LLC.</P>
( Jae Ho Choi ),( Sun Woo Jin ),( Hyung Gyun Kim ),( Chul Yung Choi ),( Hyun Sun Lee ),( Shi Yong Ryun ),( Young Chul Chung ),( Young Jung Hwang ),( Yeon Ji Um ),( Tae Cheon Jeong ),( Hye Gwang Jeong 영남대학교 약품개발연구소 2015 영남대학교 약품개발연구소 연구업적집 Vol.25 No.-
We investigated the inhibitory effects of platycodon grandiflorum root-derived saponins (Cfangkil saponins;CKS) on ovalbumin-induced airway inflammation in mice. CKS suppressed leukocytes number,IgE,Th1/Th2 cytokines, and MPC-1 chemokine secretion in bronchoalveolar lavage fluid. Also,ovalbumin-increased MUC5AC,MMP-2/9,and TLMP-1/-2 mRNA expression,NF-kB activation,leukocyes recruitment,and mucus secretion were inhibited by CKS treatment. Moreover,the active component of CKS,platyconic acid A (PA),suppressed PMA-induced MUC5AC mRNA expression(from2.1±0.2to1.1±0.1)by inhibiting NF-kB activation(from 2.3±0.2 to 1.2±0.1)via Akt(from3.7±0.3 to 2.1±0.2)(P<0.01) in A549 cells. Therefore,we demonstrate that CKS or PA suppressed the development of respiratory inflammation, hyperresponsiveness,and remodeling by reducing allergic responses,and they may be potential herbal drugs for allergen-induced respiratory disease prevention.
Choi, Jae Ho,Jin, Sun Woo,Kim, Hyung Gyun,Choi, Chul Yung,Lee, Hyun Sun,Ryu, Shi Yong,Chung, Young Chul,Hwang, Young Jung,Um, Yeon Ji,Jeong, Tae Cheon,Jeong, Hye Gwang American Chemical Society 2015 Journal of agricultural and food chemistry Vol.63 No.5
<P>We investigated the inhibitory effects of <I>Platycodon grandiflorum</I> root-derived saponins (Changkil saponins: CKS) on ovalbumin-induced airway inflammation in mice. CKS suppressed leukocytes number, IgE, Th1/Th2 cytokines, and MCP-1 chemokine secretion in bronchoalveolar lavage fluid. Also, ovalbumin-increased MUC5AC, MMP-2/9, and TIMP-1/-2 mRNA expression, NF-κB activation, leukocytes recruitment, and mucus secretion were inhibited by CKS treatment. Moreover, the active component of CKS, platyconic acid A (PA), suppressed PMA-induced MUC5AC mRNA expression (from 2.1 ± 0.2 to 1.1 ± 0.1) by inhibiting NF-κB activation (from 2.3 ± 0.2 to 1.2 ± 0.1) via Akt (from 3.7 ± 0.3 to 2.1 ± 0.2) (<I>p</I> < 0.01) in A549 cells. Therefore, we demonstrate that CKS or PA suppressed the development of respiratory inflammation, hyperresponsiveness, and remodeling by reducing allergic responses, and they may be potential herbal drugs for allergen-induced respiratory disease prevention.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jafcau/2015/jafcau.2015.63.issue-5/jf5043954/production/images/medium/jf-2014-043954_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jf5043954'>ACS Electronic Supporting Info</A></P>
66-4: High Brightness Active Matrix Micro-LEDs with LTPS TFT Backplane
Kim, Hyo-Min,Um, Jae Gwang,Lee, Suhui,Jeong, Duk Young,Jung, Younghun,Lee, Sang Hern,Jeong, Tak,Joo, Jaeyoung,Hur, Jeongwook,Choi, Jong Hwa,Kwak, Joon Seop,Jang, Jin Wiley (John WileySons) 2018 Society for Information Display International Symp Vol.49 No.1
Jeon, Chang Hoon,Um, Jae Gwang,Mativenga, Mallory,Jang, Jin IEEE 2016 IEEE electron device letters Vol.37 No.11
<P>We report a fast threshold voltage (VTH) compensation pixel circuit for active-matrix organic light-emitting diode displays. The circuit utilizes the secondary gate effect in amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs) with the dual-gate (DG) (bottom and top gate) structure and consists of three single-gate TFTs, one DG driving TFT, and two capacitors. It compensates the initial VTH variation after fabrication and takes into account the carrier mobility differences between the top and bottom channels of a DG TFT by using a correction TFT that enables VTH sampling via the channel with the higher mobility, the bottom channel. This achieves very short VTH sampling time, below 10 mu s. Experimental results are consistent with those from Silvaco SmartSpice simulations.</P>
Park, Young Chul,Um, Jae Gwang,Mativenga, Mallory,Jang, Jin The Electrochemical Society 2017 ECS journal of solid state science and technology Vol.6 No.5
<P>The effect of fluorine (F) treatment on operation of back-channel-etched (BCE), inverted staggered amorphous-indium-galliumzinc- oxide (a-IGZO) thin-film transistors (TFTs) is investigated. The F, in the form of ammonium fluoride (NH4F), is mixed with a hydrogen peroxide (H2O2)-based wet-etchant that is used to pattern source/drain Mo electrodes. X- ray photoelectron spectroscopy and secondary ion mass spectrometry reveal that the F penetrates into the a-IGZO bulk, effectively decreasing the concentration of surface hydroxyl groups that may, otherwise, be formed in abundance due to the presence of H2O2. As a consequence, device- to-device uniformity and operation of the BCE a-IGZO TFTs improves after the F treatment: The turn-on voltage changes from - 0.6 +/- 0.2 V to 0.6 +/- 0.4 V, field-effect mobility increases from 12 +/- 1 cm(2)/ V . s to 15 +/- 1 cm(2)/V . s, and subthreshold-voltage swing decreases from 368 +/- 50 mV/dec to 360 +/- 30 mV/dec. (C) 2017 The Electrochemical Society.</P>
Characterization and Modeling of a-IGZO TFTs
Migliorato, Piero,Chowdhury, Md Delwar Hossain,Jae Gwang Um,Manju Seok,Martivenga, Mallory,Jin Jang IEEE 2015 Journal of display technology Vol.11 No.6
<P>In this paper, we present a systematic approach to the characterization and modeling of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs), where the key parameters are determined from the analysis of both I- V and C- V characteristics, in a step-by-step fashion, without complex interdependences that may affect the accuracy of the results. Flat band voltage VFB and carrier concentration nFB are extracted by a method we have previously developed, validated here by applying it to simulated data. Next, the density of deep gap states is extracted, followed by the determination, by a new method, of the shallow donor concentration. The tail states parameters are determined last, by matching the calculated nFB to the experimental one. Simulations are then performed without any adjustable parameters. The approach is applied to the study of device to device variations, indicating that the material is strongly compensated. As for the analysis of Negative Bias under Illumination Stress (NBIS), this work confirms that the effect is due to creation of a double donor, with a shallow level close to the conduction band (positive correlation energy). Oxygen vacancies are the likely candidates. These defects are not detected in unstressed devices, where the characteristics can be accurately simulated by incorporating donors with a single shallow level.</P>
Chowdhury, Md Delwar Hossain,Mativenga, Mallory,Jae Gwang Um,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy John,Jin Jang Institute of Electrical and Electronics Engineers 2015 IEEE transactions on electron devices Vol. No.
<P>We studied the environmental stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with single-layer (SiO<SUB>2</SUB>) and bilayer (SiO<SUB>2</SUB>/SiN<SUB>x</SUB>) passivation under high-humidity (80%) storage. During the 30 days of investigation, all single-layer passivated TFTs showed negative turn-ON voltage shifts (AVON), the size of which increased with storing time. The negative A VON is attributed to donor generation inside the active a-IGZO caused by the diffusion of ambient hydrogen/water molecules passing through the SiO<SUB>2</SUB> passivation layer. The X-ray photoelectron spectroscopy depth profile for the SiO<SUB>2</SUB> passivated structures confirms that the concentration of oxygen vacancies, which is initially larger at the a-IGZO/SiO<SUB>2</SUB> interface, compared with the bulk a-IGZO, decreases after 30 days of storage under high humidity. This can be explained as the passivation of oxygen vacancies by diffused hydrogen. On the other hand, all bilayer passivated TFTs showed good air stability at room temperature and high humidity (80%).</P>