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Yoon, Hyunsik,Kim, Soaram,Park, Hyunggil,Nam, Giwoong,Kim, Yangsoo,Leem, Jae-Young,Kim, Min Su,Kim, Byunggu,Kim, Younggyu,Ji, Iksoo,Park, Youngbin,Kim, Ikhyun,Lee, Sang-heon,Jung, Jae Hak,Kim, Jin Soo Korean Physical Society 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.1
Undoped ZnO and Ga-doped ZnO (GZO) thin films with different Ga concentrations were prepared by using the sol-gel spin-coating method. The surface morphologies and the growth orientations of the films were measured by using scanning electron microscopy and X-ray diffraction, respectively. The electrical properties were measured by using the Hall effect. The optical transmittances and reflectances of the films were measured as functions of the wavelength by UV-vis spectroscopy. The undoped ZnO thin films exhibited rough surfaces with particle-like structures. When Ga was incorporated, the particle sizes dramatically decreased without changes in the surface morphologies, and the c-axis growth orientations of the GZO thin films were significantly decreased. The optical transmittances clearly exhibited shifts in the band edge, and those in the visible range gradually increased with increasing Ga concentration. The absorption coefficients, refractive indices, extinction constants, dielectric constants, and optical conductivities of the films gradually decreased with increasing Ga concentration.
Nanowalls: Lateral Buckling of High Aspect Ratio Janus Nanowalls (Adv. Funct. Mater. 17/2012)
Yoon, Hyunsik,Ghosh, Abhijit,Han, Jung Yeon,Sung, Seung Hyun,Lee, Won Bo,Char, Kookheon WILEY‐VCH Verlag 2012 Advanced Functional Materials Vol.22 No.17
<P>On page 3723, Won Bo Lee, Kookheon Char, and co‐workers report the fabrication of Janus nanowalls and the phenomenon of lateral buckling in the walls. To realize Janus nanowalls, metal films are deposited on one side of the polymeric nanowalls. During the metal deposition, the nanowalls themselves buckle laterally because of the compressive residual stress in the metal films and geometric constraints. </P>
Step-and-repeat process for thermal nanoimprint lithography
Yoon, Hyunsik,Cho, Hye Sung,Suh, Kahp Y,Char, Kookheon IOP Pub 2010 Nanotechnology Vol.21 No.10
<P>We present a step-and-repeat process for thermal nanoimprint lithography. For the selective heating and imprinting, a spin-coated polystyrene layer is exposed to infra-red rays from a halogen lamp (intensity ∼ 500 W) with a metal-covered glass while pressed with a transparent polymer mold (Young’s modulus ∼ 300 MPa) under a pressure of ∼ 4 bar for 60–120 s. During imprinting, the non-irradiated region is protected by a metal screen and a heat sink consisting of a copper block at the bottom which prevents the pattern collapse by lateral heat conduction from the irradiated region.</P>