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Lee, Kyu-Tae,Baac, Hyoung Won,Park, Dong Hyuk,Ok, Jong G.,Park, Hui Joon IEEE 2018 IEEE photonics journal Vol.10 No.6
<P>We investigate the effect of a dielectric overlay in a planar microcavity on optical performances of colorful, see-through ultrathin amorphous silicon/organic hybrid solar cells, where a conventional Fabry–Pérot cavity is integrated with a cathode. The proposed colored solar cell devices show an enhanced transmission efficiency by optimizing both a thickness and a refractive index of the dielectric overlay at a resonance wavelength, which is primarily attributed to a better admittance matching. In addition, a purity of semitransparent red, green, and blue colors is improved by increasing a thickness of metallic layers in the microcavity with little sacrificing the transmission efficiency; thus, achieving a wide color gamut coverage as compared to conventional liquid crystal displays. Furthermore, mitigating reflection losses at complementary wavelength ranges and creating sharp resonances lead to an improved photocurrent generation from the semitransparent hybrid solar cells. The study described in this work provides insights and possibilities to enhance the characteristic performances of diverse applications, such as energy-efficient display technologies and decorative solar cells.</P>
XIANGYU WANG,Wonhee Cho,Hyoung Won Baac,Dongsun Seo,Il Hwan Cho 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.2
In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage (Vamb) and double gate structure is applied to improve on-current (ION) and subthreshold swing (SS). We discussed the fin width (WS), body doping concentration, sidewall width (Wside), drain and gate underlap distance (Xd), source doping distance (XS) and pocket doping length (XP) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high ION of 1.2× 10<SUP>-3</SUP> A/ μ m and low Vamb of -2.0 V.
WANG, XIANGYU,Cho, Wonhee,Baac, Hyoung Won,Seo, Dongsun,Cho, Il Hwan The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.2
In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage ($V_{amb}$) and double gate structure is applied to improve on-current ($I_{ON}$) and subthreshold swing (SS). We discussed the fin width ($W_S$), body doping concentration, sidewall width ($W_{side}$), drain and gate underlap distance ($X_d$), source doping distance ($X_S$) and pocket doping length ($X_P$) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high $I_{ON}$ of $1.2{\times}10^{-3}A/{\mu}m$ and low $V_{amb}$ of -2.0 V.
Chen, Yu-Chih,Baac, Hyoung Won,Lee, Kyu-Tae,Fouladdel, Shamileh,Teichert, Kendall,Ok, Jong G.,Cheng, Yu-Heng,Ingram, Patrick N.,Hart, A. John,Azizi, Ebrahim,Guo, L. Jay,Wicha, Max S.,Yoon, Euisik American Chemical Society 2017 ACS NANO Vol.11 No.5
<P>Considerable evidence suggests that self-renewal and differentiation of cancer stem-like cells, a key cell population in tumorgenesis, can determine the outcome of disease. Though the development of microfluidics has enhanced the study of cellular lineage, it remains challenging to retrieve sister cells separately inside enclosed microfluidics for further analyses. In this work, we developed a photomechanical method to selectively detach and reliably retrieve target cells from enclosed microfluidic chambers. Cells cultured on carbon nanotube polydimethylsiloxane composite surfaces can be detached using shear force induced through irradiation of a nanosecond-pulsed laser. This retrieval process has been verified to preserve cell viability, membrane proteins, and mRNA expression levels. Using the presented method, we have successfully performed 96-plex single-cell transcriptome analysis on sister cells in order to identify the genes altered during self-renewal and differentiation, demonstrating phenomenal resolution in the study of cellular lineage.</P>
Hybrid Metal-Halide Perovskite-MoS<sub>2</sub> Phototransistor
Park, Youngseo,Lee, Sanghyun,Park, Hui Joon,Baac, Hyoung Won,Yoo, Geonwook,Heo, Junseok American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.11
<P>Two-dimensional (2D) molybdenum disulfide (MoS2) has attracted much attention as a promising next-generation optoelectronic device. In particular, multilayer MoS2 has superior optical properties compared to mono-or few-layer MoS2 because of its higher density of states and wider spectral response. However, as the number of layers increases, multilayer MoS2 becomes indirect, resulting in poor light absorption and low photoresponsivity. Here, we report the enhanced photocurrent response of a multilayer MoS2 thin-film transistor by stacking an organometal halide perovskite (CH3NH3PbI3) layer on top of the multilyaer MoS2. With the perovskite overlayer, the photocurrent increased by two orders of magnitude, and thus our proposed hybrid phototransistor exhibited significantly enhanced photoresponsivity of similar to 1.1 A/W as well as detectivity of similar to 9 x 10(10) Jones compared to the MoS2 phototransistor without the perovskite layer. We also observe that the electrical properties change because of the effect of the overlayer. Our result indicates that multilayer MoS2 with a CH3NH3PbI3 overlayer can be a promising structure for high-performance MoS2-based photodetector applications.</P>
Akter, Afroja,Yoo, Geonwook,Kim, Sangin,Baac, Hyoung Won,Heo, Junseok American Scientific Publishers 2017 Journal of Nanoscience and Nanotechnology Vol.17 No.5
<P>The electronic intraband absorption in InGaN nanodisks embedded in GaN nanowires with several kinds of cladding materials and without cladding was theoretically investigated. The cladding layer was 5 nm thick, and AlN, GaN, and Al0.4Ga0.6N were considered. The strain distribution, internal electric field, and intraband absorption in the nanodisks were calculated using the elastic energy minimization method and the single-band Schrodinger equation implemented in Nextnano3. For a plain nanowire without cladding, an inhomogeneous strain in the disk caused a piezoelectric field and deformation potential, yielding band-bending and a higher electron probability density in the periphery of the disk. An InGaN nanodisk embedded in a cladding GaN nanowire exhibited a higher intraband absorption. The case of the GaN cladding was optimal owing to the homogeneous surroundings of the disk.</P>