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      • 信用狀統一規則 海上船荷證券條項의 改正에 관한 考察

        文熙哲,徐百鉉 충남대학교 경상대학부설 경영경제연구소 1997 경영논집 Vol.13 No.1

        본 연구는 신용장통일규칙의 개정과정에 관한 역사적 고찰을 통해 특히 해상선하증권조항의 변화를 가져온 주요 요인이 무엇인가에 대해 규명하고 있다. 신용장통일규칙 해상선하증권조항의 주요 개정원인은 운송관행 및 운송서류 작성관행의 변화, 해석의 명확성 및 용이성 제고, 국제규칙과의 조화 등으로 요약할 수 있다. 본 연구는 향후 신용장통일규칙 운용서류 관련조항의 개정방향에 대한 이론적 토대를 제공하는 한편, 국제무역관행 및 국제규칙의 변화에 따른 신용장 통일규칙의 문제점 및 개정방향에 관한 후속연구에 기초자료로 활용될 수 있을 것이다.

      • KCI등재
      • SCISCIESCOPUS

        Highly sensitive nonpolar <i>a</i>-plane GaN based hydrogen diode sensor with textured active area using photo-chemical etching

        Baik, Kwang Hyeon,Kim, Jimin,Jang, Soohwan Elsevier 2017 Sensors and actuators. B Chemical Vol.238 No.-

        <P><B>Abstract</B></P> <P>In this work, a highly sensitive <I>a-</I>plane ( 11 2 ¯ 0 ) GaN (<I>a-</I>GaN) based hydrogen sensor with a large active surface area on the Schottky contact region was fabricated and characterized. By using a simple photochemical etching technique, a striated surface morphology with triangular prisms consisting of <I>m</I>-plane facets on the <I>a-</I>GaN surface was obtained. The maximum relative current change of the etched <I>a-</I>GaN diode was as high as 3.8×10<SUP>7</SUP>%, and the reduction of the effective Schottky barrier height was 0.49eV upon 4% hydrogen exposure. The photo-chemically etched <I>a-</I>GaN sensor showed a remarkably improved hydrogen response and good repeatability for cyclic exposure to hydrogen. The photo-chemically textured GaN surface with enlarged surface area increased the number of adsorption sites available for hydrogen molecules to catalytically-decompose into surface atoms, lowering the effective Schottky barrier height, thereby increasing the measured current. Furthermore, the hydrogen sensing properties of the etched <I>a</I>-GaN diodes at different values of humidity and temperature were investigated.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Photo-chemically etched <I>a-plane</I> GaN Schottky diode hydrogen sensor was developed. </LI> <LI> The etched large surface offers more active adsorption sites for hydrogen molecules. </LI> <LI> The high sensitivity of the device for hydrogen was observed up to 500°C. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>

      • SCOPUSSCIE

        Moisture Insensitive PMMA Coated Pt-AlGaN/GaN Diode Hydrogen Sensor and Its Thermal Stability

        Baik, Kwang Hyeon,Jung, Sunwoo,Ren, Fan,Pearton, S. J.,Jang, Soohwan The Electrochemical Society 2018 ECS journal of solid state science and technology Vol.7 No.7

        <P>Poly(methyl methacrylate) (PMMA) encapsulated Pt-AlGaN/GaN Schottky diodes show highly sensitive (100 ppm, 0.01% by volume) room temperature detection of hydrogen and are insensitive to the presence of water in the sensing ambient. These diodes show no physical degradation or loss of sensitivity when repeatedly cycled (50 x, 1 min hold at each temperature) between 25-100 degrees C. There is complete selectivity for hydrogen sensing over other gases, including CO, CO2, NO2, O-2 and CH4. The PMMA encapsulation provides an effective and robust barrier to moisture, greatly increasing the range of environments in which the sensors can be used. (C) The Author(s) 2018. Published by ECS.</P>

      • Ohmic Contact Properties of Photo-Chemically Etched Nonpolar A-Plane [Formula] GaN Films

        Baik, Kwang Hyeon,Lee, Sohyun,Jang, Soohwan The Electrochemical Society 2017 ECS journal of solid state science and technology Vol.6 No.11

        <P>Nonpolar <I>a-</I>plane [Formula] GaN (<I>a-</I>GaN) was photo-chemically etched under ultraviolet illumination using alkali KOH solution, and the Ohmic contact properties on the etched <I>a-</I>GaN epitaxial layer were investigated. After photo-chemical etching, the striated surface morphology along the <I>c-</I>axis [0001] direction was obtained having triangular prisms consisting of <I>m</I>-plane [Formula] facets. The properties of Ti/Al/Ni/Au Ohmic contact on surface-textured <I>a</I>-GaN films were studied with transmission line method patterns aligned along the specific crystal orientations. The minimum specific contact resistance of 9.97 × 10<SUP>−5</SUP> Ω·cm<SUP>2</SUP> was achieved along the <I>c-</I>axis on the etched GaN surface at the annealing temperature of 750°C. The etched <I>a-</I>GaN showed higher electrical conductivity along the <I>c-</I>axis than along <I>m-</I>axis. This anisotropic behavior is in contrast to that of the unetched <I>a-</I>GaN where carrier scattering by basal plane stacking faults in the direction perpendicular to the <I>c-</I>axis is a major factor in determining opposite anisotropic conductivity. The higher conductivity along the c-axis of the etched <I>a</I>-GaN film could be explained by more dominant effect of surface roughness scattering.</P>

      • 차세대 동포의 정체성, 미국·CIS에서 느낀 점

        백주현 ( Baik Joo-hyeon ) 한국외교협회 2023 외교 Vol.147 No.0

        재외 동포사회는 모국의 역사적 질곡, 경제발전과 민주화, 글로벌 중추국가로의 성장과정을 반영하는 거울이다. 미국 동포사회나 고려인 동포사회나 그 기원은 19세기 말 모국의 열악한 경제 상황에 기인한다. 미국 동포사회는 모국의 독립과 경제발전에 기여하면서 급성장하였다. 미국의 국제 정치, 경제적 발전과 위상 강화는 미국 동포사회의 발전에도 기여한 바 있다. 4차 혁명 시대를 맞이하여 우리 기업들이 2차전지, 전기차, 반도체 등 주요 산업분야에서 미국에 대한 투자를 급증시키면서 미국과의 경제안보 협력을 강화하고 있다. 이에 따라 재미 동포사회는 미국 사회의 필수 불가결한 주요 부분이 되어가고 있다. 반면에 ‘고려인’ 동포사회는 1936년 스탈린의 강제이주 정책으로 생활의 근거를 빼앗기고, 언어·문화 계승을 금지당하는 어려움을 겪었다. 1990년 한·소 수교를 계기로 74년간 끊겨있던 모국과의 연대성 회복의 기회가 마련되었다. 그러나 1991년 소련의 붕괴와 15개의 신생국가 탄생으로 고려인 동포사회는 정책이 다른 국가들에 나뉘어 살게 되었다. 2022년 우크라이나 전쟁 발발로 고려인들은 더욱 어려운 정치적, 경제적 상황에 놓이게 되었다. 재외동포청 출범을 계기로 우리 정부는 고려인들의 국적취득과 모국에서의 취업 허용 등을 고려해야 할 때이다. 때마침 고려인 지원특별법도 발의되었다. 여야가 뜻을 모아서 고려인 차세대에 대한 한국어, 한국역사, 문화에 대한 교육을 강화하고 군내로의 이주 허용 방안도 검토해야 할 때이다. 미국이나 CIS지역 차세대 동포들의 모국과의 연대성 강화를 위한 실질적인 정책이 추진되는 것이 바람직할 것이다. The overseas Korean community is a mirror that reflects the historical fetters of the home country, economic development and democratization, and the process of growing into a global pivotal country. The American Korean community and the Koryo Korean community originate from the poor economic situation in their home country at the end of the 19th century. The American community grew rapidly, contributing to the independence and economic development of their home country. America’s international political and economic development and strengthening of its status have also contributed to the development of the Korean community. In the era of the 4th Industrial Revolution, Korean companies are rapidly increasing their investments in the United States in major industries such as rechargeable batteries, electric vehicles, and semiconductors, while strengthening economic and security cooperation with the United States. Accordingly, the Korean-American community is becoming an essential and major part of American society. On the other hand, due to Stalin’s forced migration policy in 1937, the Korean community suffered from being deprived of their livelihood and being prohibited from passing on their language and culture. The establishment of diplomatic relations between Korea and Russia in 1990 provided an opportunity to restore solidarity with the mother country that had been disconnected for 74 years. However, with the collapse of the Soviet Union in 1991 and the birth of 15 new countries, the Korean community was divided into countries with different policies. With the outbreak of the war in Ukraine in 2022, the ethnic Korean people were placed in an even more difficult political and economic situation. With the launch of the Overseas Koreans Office, it is time for our government to consider allowing Koryo Koreans to acquire nationality and work in their home country. Recently, a special law to support Koryo people was also proposed in the National Assembly. It is time for the ruling and opposition parties to come together to strengthen education on Korean language, Korean history, and culture for the next generation of Koryo people, and also review plans to allow immigration into the county. It would be desirable to pursue practical policies to strengthen the solidarity of next-generation compatriots in the U.S. or CIS regions with their home countries.

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