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Oh, Youngtek,Jeon, Insu,Kwon, Hyeokshin,Suh, Hwansoo,Yun, Dongjin,Lee, Joohyun,Song, Young Jae,Park, Seongjun Elsevier 2019 PHYSICA B-CONDENSED MATTER - Vol.561 No.-
<P><B>Abstract</B></P> <P>The one-dimensional form of silicon (Si) has been attracting significant scientific and industrial interest again in the field of Li-ion batteries as well as electronic devices, offering higher reversible capacity than carbon materials in an anode. In this work, a new method to grow a uniform Si nanowire mat without metallic nanoparticles was developed, and the growth conditions and conformational properties were also characterized. It is suggested that Si nanowire could be grown by the charge transfer through the hexagonal boron nitride (h-BN) film from the Cu foil as the previously reported graphene growth on the h-BN film on Cu. Web-like bundles of Si nanowires or nanoclusters could be selectively grown on this h-BN/Cu substrate by controlling the substrate temperature during Si deposition. The morphology and chemical composition of the Si nanowire mats, therefore, were systematically characterized using scanning tunneling microscopy, atomic force microscopy, and X-ray photoemission spectroscopy. When decoupled from the metal by a thin h-BN film during the growth, this pristine Si nanowire mat can provide promising technical breakthroughs for anode applications in Li-ion batteries.</P> <P><B>Highlights</B></P> <P> <UL> <LI> A new and unique growth method of “uniform mats of Si nanowires” in a large area using chemical vapor deposition. </LI> <LI> The Si nanowire mats could be selectively grown by depositing Si on a thin dielectric layer of h-BN/Cu substate. </LI> <LI> The Si nanowire mat is electrically undoped and pristine because it is dielectrically decoupled from the metal substrate. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Blue organic light-emitting diodes based on solution-processed fluorene derivative.
Cho, Namchul,Choi, Byoung-Ki,Suh, Hwansoo,Park, Jong-Jin,Kim, Jong-Min,Lee, Kwang-Sup American Scientific Publishers 2010 Journal of Nanoscience and Nanotechnology Vol.10 No.10
<P>We report blue fluorescent organic light-emitting devices (OLED) by solution process utilizing a blue emitting small molecule, 2,7-bis[(9-ethyl-9H-carbazol-3-yl)ethenyl]-9,9-bis(4-n-octyloxyphenyl)-9H-fluorene (CB), which has good solubility in common organic solvent. The peak positions of absorption and emission spectra of a new fluorene-based molecule in tetrahydrofuran solution were observed at 399 and 439 nm, respectively. We achieved a maximum luminous efficiency of approximately 3 cd/A with CIE color coordinates of (0.15, 0.15) in our device.</P>
Wu, Qinke,Jung, Seong Jun,Jang, Sung Kyu,Lee, Joohyun,Jeon, Insu,Suh, Hwansoo,Kim, Yong Ho,Lee, Young Hee,Lee, Sungjoo,Song, Young Jae RSC Pub 2015 Nanoscale Vol.7 No.23
<P>We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications.</P>
Wu, Qinke,Jung, Seong Jun,Jang, Sung Kyu,Lee, Joohyun,Jeon, Insu,Suh, Hwansoo,Kim, Yong Ho,Lee, Young Hee,Lee, Sungjoo,Song, Young Jae RSC Pub 2015 Nanoscale Vol.7 No.28
<P>Correction for 'Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition' by Qinke Wu et al., Nanoscale, 2015, 7, 10357-10361.</P>
Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates
Choi, Jun Hee,Zoulkarneev, Andrei,Kim, Sun Il,Baik, Chan Wook,Yang, Min Ho,Park, Sung Soo,Suh, Hwansoo,Kim, Un Jeong,Bin Son, Hyung,Lee, Jae Soong,Kim, Miyoung,Kim, Jong Min,Kim, Kinam Springer Science and Business Media LLC 2011 Nature photonics Vol.5 No.12
Pairing enhancement by interfacial phonons in a bulk crystal of perovskite-clad FeAs monolayers
Won-Jun JANG,Seokhwan CHOI,Hyunjung LEE,Jong Mok OK,Hyunwoo CHOI,Alex Taekyung LEE,Alireza AKBARI,Hwansoo SUH,Jayong KU,Yannis SEMERTZIDIS,Yunkyu BANG,Jun Sung KIM,Jhinhwan LEE 한국진공학회 2016 한국진공학회 학술발표회초록집 Vol.2016 No.8
Jang, Jaeyoung,Nam, Sooji,Im, Kyuhyun,Hur, Jaehyun,Cha, Seung Nam,Kim, Jineun,Son, Hyung Bin,Suh, Hwansoo,Loth, Marsha A.,Anthony, John E.,Park, Jong‐,Jin,Park, Chan Eon,Kim, Jong Min,Kim, Kinam WILEY‐VCH Verlag 2012 Advanced functional materials Vol.22 No.5
<P><B>Abstract</B></P><P>The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V<SUP>−1</SUP> s<SUP>−1</SUP>) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates).</P>