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Solving Unbounded Knapsack Problem Using an Adaptive Genetic Algorithm with Elitism Strategy
Rung-Ching Chen,Cheng-Huei Jian,Yung-Fa Huang 보안공학연구지원센터 2008 International Journal of Smart Home Vol.2 No.2
With the popularity of sensor networks, solving the knapsack problem has become important in selecting the best combination of sensor nodes. Many methods have been proposed to solve the Knapsack problem, but few of them have used the genetic algorithm, especially in unbounded Knapsack problems. In this paper, we use the genetic algorithm to solve the unbounded Knapsack problem. We combine an elite strategy and a self adapting system into the genetic algorithm. Using the elite strategy overcomes the problem of the slow convergence rate of the general genetic algorithm. The elite strategy retains good chromosomes and ensures that they are not eliminated through the mechanism of crossover and mutation, ensuring that the features of the offspring chromosomes are at least as good as their parents. The system automatically adapts the number of the initial population of chromosomes and the number of runs to be executed in the genetic algorithm. It will obtain the best value from the chromosomes of each run executed, and retain the values in an elite group. The optimal value is then taken from the elite group and adopted as the real solution. Experimental results have shown that our method rapidly discovers the best solution of the problem.
Wang, Bin,Huang, Ming,Tao, Li,Lee, Sun Hwa,Jang, A-Rang,Li, Bao-Wen,Shin, Hyeon Suk,Akinwande, Deji,Ruoff, Rodney S. American Chemical Society 2016 ACS NANO Vol.10 No.1
<P>We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled mono layer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12x) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.</P>
3'-Hydroxyamentoflavone and Its 7-O-Methyl Ether, Two New Biflavonoids from Aristolochia contorta
Chen Ye-Gao,Yu Li-Li,Huang Rang,Liu Jia-Chuan,Lv Yu-Ping,Zhao Yang The Pharmaceutical Society of Korea 2005 Archives of Pharmacal Research Vol.28 No.11
Two new biflavonoids, 3'-hydroxyamentoflavone-7-O-methyl ether (1) and 3'-hydroxyamentoflavone (2), were isolated from the fruits of Aristolochia contorta Bge. Their structures were elucidated by HR-ESI-MS, 1D-, and 2D-NMR spectroscopy.