http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
플랜트 O&M을 위한 기자재 조달방식 의사결정에 관한 연구 - 기술전략 관점을 중심으로 -
홍대근,임용택,Hong, Daegeun,Lim, Yongtaek 한국시스템엔지니어링학회 2019 시스템엔지니어링학술지 Vol.15 No.1
In the plant industry, the share of equipment accounts for 45 ~ 75%, which is very high. It is a traditional plant centered on processes and reactions like petroleum and chemical plants. Renewable energy generation plants such as wind power generation and solar power generation are equipment-centric plants. Equipment-centric plants are very important not only in the EPC phase but also in the operation and management phase. The procurement of equipment for plant operation and management can be divided into make and buy. Make is a method of producing equipment itself, and buy is a method of procuring equipment from the outside. The procurement method of the equipment directly affects the plant operation and management cost. In this study, the decision making of equipment procurement method for plant operation and management is defined as 4 phase. Each phase is selection of procurement decision-making objects, technology strategy perspective, finance perspective, and production perspective. In detail, we defined selection process of procurement decision-making objects and technology strategy perspective process. We will contribute to the enhancement of the competitiveness of the plant operation and management area by carrying out researches on the process and application examples of financial and production perspectives in the future.
MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source–Drain Bulk Region
Jaewook Jeong,Yongtaek Hong,Jae Kyeong Jeong,Jin-Seong Park,Yeon-Gon Mo IEEE 2009 Journal of display technology Vol.5 No.12
<P>In this paper, we analyzed electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with plasma-exposed source-drain (S/D) bulk region. The parasitic resistance and effective channel length characteristics exhibit similar behavior with that of crystalline silicon metal oxide-semiconductor field effect transistor (c-Si MOSFET) that has doped S/D bulk region. The transfer curves little changed with gate overlap variation, and the width-normalized parasitic resistance obtained from transmission line method was as low as 3 to 6 Omegamiddotcm. The effective channel length was shorter than the mask channel length and showed gate-to-source (V<SUB>GS</SUB>) voltage dependency that is frequently observed for lightly doped drain (LDD) MOSFET. Experimental and simulation results showed that the plasma exposure caused an LDD-like doping effect in the S/D bulk region by inducing oxygen vacancy in the a-IGZO layer.</P>
Surface planarization issues of metal foil substrates for flexible electronics applications
Seungjun Chung,Jaewook Chung,Yongtaek Hong 대한전자공학회 2007 ITC-CSCC :International Technical Conference on Ci Vol.2007 No.7
Surface planarization capability and electrical and thermal stability of several low-k materials have been tested for different metal foil substrates including kovar, invar, and stainless steel foil substrates. Atomic force microscope measurement showed a significant reduction of the surface roughness after applying an organic planarization layer on the metal foil substrates. Capacitance-voltage and current-voltage behavior under different thermal and electrical stress conditions for flexible electronics applications showed good thermal and electrical stabilities of the organic planarization layers.
Kim, Seohee,Cho, Hyunduck,Hong, Yongtaek,Lee, Changhee TaylorFrancis 2009 Molecular Crystals and Liquid Crystals Vol.513 No.1
<P> We report the electrode-area dependence of the high-frequency characteristics of polymer diodes fabricated on a flexible poly(ether sulfone) (PES) substrate with inkjet-printed Ag electrode as an anode. Active layer of poly(3-hexylthiophene-2,5-diyl) (P3HT) layer was spin-coated on the Ag anode and then Al cathode was evaporated on the P3HT layer. The rectifying characteristics of P3HT diodes with different area sizes were compared, and their frequency response was analyzed for the sinusoidal input of different frequencies. The diode with smaller area exhibited higher breakdown voltage and operating frequency: The diode with a small area of 0.05 mm2 showed a 3 dB point at 1.8 MHz.</P>
접촉 전극의 엣지에 형성된 스캘럽핑이 박막 트랜지스터의 전기적 성능에 미치는 영향에 대한 연구
정재욱(Jaewook Jeong),홍용택(Yongtaek Hong) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
We report effect of edge scalloping of the contact electrodes of thin-film transistors (TFTs) on their electrical performance. The scalloped edges are modeled as a sinusoidal wave. We emulate the source/drain current and current density distribution for scalloped edge TFT by using ATLAS 3D simulator. Peak-to-peak values, period, and phase shift between S/D electrodes were varied. Our simulation result showed that the current density is localized at the peak point of source/drain scalloped edge according to the varying parameters. The current density localization is sensitive to the parameters in order of the peak-to-peak value, period, and phase shift. TFT electrical performance change is also analyzed for different channel lengths.
Cho, Hyunduck,Kim, Seohee,Hong, Yongtaek,Lee, Changhee TaylorFrancis 2009 Molecular Crystals and Liquid Crystals Vol.513 No.1
<P> Inverters were fabricated with pentacene organic thin film transistors (OTFTs) using inkjet printing method. The gate, source and drain electrodes were printed with Ag ink. The mobility and threshold voltage of the bottom-contact OTFT were 0.078 cm2/Vs and 2.8 V, respectively. Printed inverters operated well in 200 Hz at VDD = -20 V.</P>