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Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET
Shang-Chao Hung,Qiuping Luan,Hau-Yu Lin,Shuguang Li,Shoou-Jinn Chang 한국물리학회 2013 Current Applied Physics Vol.13 No.8
We report the first demonstration of n-type IIIeV metal-semiconductor field-effect transistors (nMESFETs) with IV group material hetero-junction source and drain (S/D) technology. A selective epitaxial growth of germanium (Ge) in the recessed gallium arsenide (GaAs) S/D regions is successfully developed using ultra-high vacuum chemical vapor deposition (UHVCVD) system. The dual channel structure includes an additional 10-nm higher mobility n-In0.2Ga0.8As layer on n-GaAs channel and is introduced to further improve the device performance. The n-MESFET, combining embedded-Ge S/D with In0.2Ga0.8As/GaAs channel, exhibits good transfer properties with a drain current on/off ratio of approximately 103. Due to the small barrier height of Ti/In0.2Ga0.8As Schottky contact, a lattice-matched wide bandgap In0.49Ga0.51P dielectric layer is also integrated into the device architecture to build a higher electron Schottky barrier height (SBH) for gate leakage current reduction. The Ti/In0.49Ga0.51P/n-In0.2Ga0.8As Schottky diode shows a comparable leakage level to Ti/n-GaAs with 2 x 10-2 A/cm2 at a gate voltage of -2.0 V.
The Effect of CdS QDs Structure on the InGaP/GaAs/Ge Triple Junction Solar Cell Efficiency
Chen-Chen Chung,Binh Tinh Tran,Hau-Vei Han,Yen-Teng Ho,Hung-Wei Yu,Kung-Liang Lin,Hong-Quan Nguyen,Peichen Yu,Hao-Chung Kuo,Edward Yi Chang 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.2
This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) fabricated by a novel chemical solution. With the anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency more than that of a traditional GaAs-based device. Experimental results indicate that CdS quantum dot can enhance the short-circuit current by 0.33 mA/cm2, which is observed for the triple-junction solar cells with CdS QDs of about 3.5 nm in diameter. Moreover, the solar cell conversion efficiency is improved from 28.3% to 29.0% under one-sun AM 1.5 global illumination I-V measurement.