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Lee, Jaewook,Kim, JiEun,Go, Jun,Lee, Jong Ho,Han, Dong-Wook,Hwang, DaeYoun,Lee, Jaebeom Elsevier 2015 Colloids and Surfaces B Vol.135 No.-
<P><B>Abstract</B></P> <P>The biological activities and therapeutic potential of phytochemical-decorated Au nanoparticles (Phyto-AuNPs) were investigated through the treatment of Phyto-AuNPs on the dorsal skin of rats via transdermal drug delivery process in order to regenerate surgical wounded and burned skin. Two different Phyto-AuNPs were applied to the dorsal skin: gallic acid–isoflavone – covered AuNPs (GI-AuNPs) and protocatechuic acid–isoflavone – covered AuNPs (PI-AuNPs). From the biological activity monitoring, it has been resulted that 5-fold thicker epidermis (ER), 50% reduction of metalloproteinase-1 (MMP-1) level, 3-fold higher superoxide dismutase (SOD) activity were obtained in the Phyto-AuNP-treated group, compared with a vehicle group (deionized water (DI-water) treatment). Moreover, the Phyto-AuNPs treatment on the surgical and burn damaged Sprague-Dawley (SD) rats induced higher expression of vascular endothelial growth factor (VEGF) and angiopoietin-2 (Ang-2). It would be plausible that antioxidant property of Phyto-AuNPs assist the acceleration and activation of biomolecules in the healing mechanism, where Phyto-AuNPs can be potential candidates for skin regeneration and wound healing.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Phytochemical decorated Au nanoparticles (Phyto-AuNPs) have been eco-friendly synthesized using gallic acid, protocatechuic acid and isoflavone without thermal and pressure assistance. </LI> <LI> According to hairless mouse dorsal skin test, it was proved that Phyto-AuNPs exhibited anti-oxidant effect and skin regeneration property. </LI> <LI> Phyto-AuNPs also showed wound healing properties for surgically damaged and burned dorsal skins of SD rats via transdermal treatment. </LI> <LI> These bioactive nanomaterials can be used for the excellent skin therapy agents. </LI> </UL> </P>
Hagyoul Bae,Sungwoo Jun,Choon Hyeong Jo,Hyunjun Choi,Jaewook Lee,Yun Hyeok Kim,Seonwook Hwang,Hyun Kwang Jeong,Inseok Hur,Woojoon Kim,Daeyoun Yun,Euiyeon Hong,Hyojoon Seo,Dae Hwan Kim,Dong Myong Kim IEEE 2012 IEEE electron device letters Vol.33 No.8
<P>We propose a modified conductance method for extraction of the subgap density of states (DOS) in amorphous indium-gallium-zinc oxide thin-film transistors by using the measured capacitance and conductance through the capacitance-voltage (C-V) measurement. In the proposed method, the subgap DOS [g<SUB>A</SUB>(E)] is extracted from the frequency-dispersive C-V characteristics by localized traps in the active channel region. The extracted g<SUB>A</SUB>(E) shows a superposition of the exponential tail states and the exponential deep states over the bandgap (N<SUB>TA</SUB> = 3 × 10<SUP>18</SUP> cm<SUP>-3</SUP> · eV<SUB>-1</SUB>, N<SUB>DA</SUB> = 2.8 × 10<SUP>17</SUP> cm<SUP>-3</SUP> · eV-1, kT<SUB>TA</SUB> = 0.04 eV, and kT<SUB>DA</SUB> = 0.77 eV). We note that the gate-bias-dependent Cfree by free electron charges can be separated from C<SUB>loc</SUB> by localized trap charges through the proposed method.</P>