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Preparation and characterization of sprayed In<sub>2</sub>O<sub>3</sub>:Mo films
Prathap, P.,Gowri Devi, G.,Subbaiah, Y. P. V.,Ganesan, V.,Ramakrishna Reddy, K. T.,Yi, J. WILEY-VCH Verlag 2008 Physica status solidi. PSS. A, Applications and ma Vol.205 No.8
<P>Transparent conducting oxides (TCO) play a major role in the area of thin film photovoltaics, flat panel displays, organic light emitting diodes and other optoelectronic devices. In order to improve the performance of a device, the TCO should have good optical transmittance as well as conductivity. In the present study, In<SUB>2</SUB>O<SUB>3</SUB>:Mo films have been grown by an economic and simple spray pyrolysis method with different molybdenum doping concentrations that vary in the range, 0–12 at% at a substrate temperature of 400 °C. The structural and morphological, electrical and optical behaviour of the as-grown layers were studied. All the deposited layers showed a body-centered cubic structure with a strong (222) orientation. In<SUB>2</SUB>O<SUB>3</SUB>:Mo films grown with Mo-concentration of 6.0 at% had the maximum grain size of 90 nm. The average optical transmittance of the films was >85% in the visible region. The change of grain size, electrical resistivity, carrier mobility and density, optical band gap and figure of merit with doping concentration was reported and discussed. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
Growth and characterization of indium oxide films
P. Prathap,G. Gowri Devi,Y.P.V. Subbaiah,K.T. Ramakrishna Reddy,V. Ganesan 한국물리학회 2008 Current Applied Physics Vol.8 No.2
In2O3 250450.C. The structural and morphological properties of the as-deposited lms were studied using X-ray diractometer and scanningelectron microscope as well as atomic force microscope, respectively. The lms formed at a temperature of 400.C showed body-centeredcubic structure with a strong (22) orientation. The structural parameters such as the crystallite size, lattice strain and texture coecientof the lms were also calculated. The lms deposited at a temperature of 400.C showed an optical transmittance of >85% in the visibleregion. The change of resistivity, mobility, carrier concentration and activation energies with the deposition temperature was studied.The highest gure of merit for the layers grown at 400℃ was 1.09x10-³Ω-¹.