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Jinwoo Noh,Minseok Jo,Chang Yong Kang,Gilmer, David,Kirsch, Paul,Lee, Jack C.,Byoung Hun Lee IEEE 2013 IEEE electron device letters Vol.34 No.9
<P>A semiempirical model that can simulate dc and pulse (ac) characteristics of filament-type HfO<SUB>x</SUB>-based resistance change random access memory (ReRAM) devices has been developed. Time-dependent device characteristics, because of the dynamic change in the filament size, were emulated using a modified ion migration model. This model describes the difference between SET and RESET operations using a current crowding effect This model is a semiempirical model that can simultaneously match both dc and ac characteristics of HfOx-based ReRAM devices.</P>
Characteristic Analysis of Electrical Stress in High Permittivity TiO₂ Gate Dielectric MOSFETs
Hyeon-Seag Kim,S. A. Campbell,D. C. Gilmer,Nam Young Kim 한국정보과학회 1998 Journal of Electrical Engineering and Information Vol.3 No.4
Suitable replacement materials for ultrathin. SiO₂ in deeply scaled MOSFETs such as lattice polarizable films, which have much higher permittivities than SiO₂, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO₂which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface states are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO₂film near the SiO₂interfacial layer that allow a tunneling current component at low bias.