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MRAM Technology for High Density Memory Application
Kim, Chang-Shuk,Jang, In-Woo,Lee, Kye-Nam,Lee, Seaung-Suk,Park, Sung-Hyung,Park, Gun-Sook,Ban, Geun-Do,Park, Young-Jin The Institute of Electronics and Information Engin 2002 Journal of semiconductor technology and science Vol.2 No.3
MRAM(magnetic random access memory) is a promising candidate for a universal memory with non-volatile, fast operation speed and low power consumption. The simplest architecture of MRAM cell is a combination of MTJ(magnetic tunnel junction) as a data storage part and MOS transistor as a data selection part. This article will review the general development status of MRAM and discuss the issues. The key issues of MRAM technology as a future memory candidate are resistance control and low current operation for small enough device size. Switching issues are controllable with a choice of appropriate shape and fine patterning process. The control of fabrication is rather important to realize an actual memory device for MRAM technology.