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Minimally Invasive Stereotactical Radio-ablation of Adrenal Metastases as an Alternative to Surgery
Ciro Franzese,Davide Franceschini,Luca Cozzi,Giuseppe D’Agostino,Tiziana Comito,Fiorenza De Rose,Pierina Navarria,Pietro Mancosu,Stefano Tomatis,Antonella Fogliata,Marta Scorsetti 대한암학회 2017 Cancer Research and Treatment Vol.49 No.1
Purpose The purpose of this study was to study the clinical outcome for patients with metastases of the adrenal gland treated with stereotactic body radiation therapy. Materials and Methods Forty-six patients were studied retrospectively. The dose prescription was 40 Gy in four fractions. Dosimetric analysis was performed using the dose volume histograms while clinical outcome was assessed using actuarial analysis with determination of the overall survival (OS) and local control (LC) rates. Results The planning objectives were met for all patients. With a median follow-up period of 7.6 months, at the last follow-up 42 patients (91.3%) were alive and four had died because of distant progression. The actuarial mean OS was 28.5±1.6 months, the median was not reached. One-year and 2-year OS were 87.6±6.1%. None of the risk factors was significant in univariate analysis. Actuarial mean LC was 14.6±1.8 months (95% confidence interval [CI], 11.0 to 18.2) and median LC was 14.5±2.0 months (95% CI, 10.5 to 18.5). One-year and 2-year LC were 65.5±11.9% and 40.7±15.8%, respectively. A mild profile of toxicity was observed in the cohort of patients. Forty patients (86.9%) showed no complication (grade 0); two patients reported asthenia, six patients (13.1%) reported either pain, nausea, or vomiting. Of these six patients, five patients (10.9%) were scored as grade 1 toxicity while one patient (2.2%) was scored as grade 2. Conclusion Stereotactic body radiation therapy treatment provided an adequate clinical response in the management of adrenal gland metastases.
Spera, M.,Corso, D.,Di Franco, S.,Greco, G.,Severino, A.,Fiorenza, P.,Giannazzo, F.,Roccaforte, F. Elsevier 2019 Materials science in semiconductor processing Vol.93 No.-
<P><B>Abstract</B></P> <P>This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminum (Al) at different energies (30–200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 10<SUP>20</SUP> at/cm<SUP>3</SUP>. The implanted samples were annealed at high temperatures (1675–1825 °C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775 °C, while this increase becomes more significant at 1825 °C (RMS = 1.2 nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65–1.34 × 10<SUP>18</SUP>/cm<SUP>3</SUP> and mobility values in the order of 21–27 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>. The temperature dependent electrical measurements allowed to estimate an activation energy of the Al-implanted specie of about 110 meV (for the post-implantation annealing at 1675 °C) and a fraction of active p-type Al-dopant ranging between 39% and 56%. The results give useful indications for the fabrication of 4H-SiC JBS and MOSFETs.</P>