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Optoelectronic Characteristics of UV Photodetector Based on GaN/ZnO Nanorods p-i-n Heterostructures
Qingshan Li,Lichun Zhang,Fengzhou Zhao,Caifeng Wang,Feifei Wang,Ruizhi Huang 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.4
We demonstrate an efficient ultraviolet (UV) photodetector operating at room temperature based on n-ZnO nanorods/i-ZnO/p-GaN heterojunctions. We employ x-ray diffraction and field-emission scanning electron microscopy to confirm the high quality of the ZnO nanorods using an undoped ZnO film as the interlayer. Then, we investigate the photoelectric properties of the fabricated photodetector with UV light illumination under a different reverse bias. Based on the current-voltage curve, the photocurrent to dark current ratio is approximately 73.3 at −4 V. At zerobias voltage, the peak responsivity was 138.9 mA/W at 362 nm under front-illumination conditions. Time-varying measurements indicate the reproducibility and stability of the heterojunction photodetector.
Fabrication of Hollow Polymer Microchannels Using the MIMIC Technique with Subsequent Heat Treatment
Weiren Li,Wenqiang Xing,Fengzhou Zhao,Lichun Zhang,Yupeng Huang,Jinxiu Li,Linwei Zhu,Zheng Xu,Dengying Zhang 한국정밀공학회 2021 International Journal of Precision Engineering and Vol.22 No.8
The hollow polymer microchannels with different shapes and dimensions have been fabricated by the MIMIC method and the heating process for the first time. The smallest cross-sectional dimensions of hollow polymer microchannels were about 2.6 μm in the vertical direction and 3.5 μm in the horizontal direction. The length of hollow polymer microchannels increased parabolically with the heating temperature in the range of 30–135 °C. And the influence of the PDMS mold crosssectional areas on the length of the microchannels was invetigated. Furthermore, the forming mechanism of hollow polymer microchannels was disscussed in detail. This technique provides a cheap, simple and controllable way for the preparation of microchannels.
Room Temperature Electroluminescence from n-ZnO:Ga/i-ZnO/p-GaN:Mg Heterojunction Device Grown by PLD
Lichun Zhang,Qingshan Li,Feifei Wang,Chong Qu,Fengzhou Zhao 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.3
The n-ZnO:Ga/p-GaN:Mg and n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated by the pulsed laser deposition (PLD) technique. The blue electroluminescence (EL) of the n-ZnO:Ga/ p-GaN:Mg heterojunction LEDs is emitted mainly from the p-GaN layer instead of the n-ZnO:Ga layer, for the reason that the electron injection from n-ZnO:Ga prevailed over the hole injection from p-GaN:Mg due to the higher carrier concentration and carrier mobility in n-ZnO:Ga. On the other hand, the n-ZnO:Ga/i-ZnO/p- GaN:Mg heterojunction LEDs exhibited dominant ultraviolet-blue emission. The reason for this difference is attributed to the inserted undoped i-ZnO layer between n-ZnO:Ga and p-GaN:Mg, in which the holes from p- GaN:Mg and the electrons from n-ZnO:Ga are recombined.