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The Quantity-Quality Transition of Children: Evidence From The Philippines
Jana Crissia DC. Estacio,Rodger M. Valientes 한국무역연구원 2014 The International Academy of Global Business and T Vol.10 No.2
This study looked at the quantity-quality transition of children in the Philippines. Quantity-quality transition is the decline in lifetime fertility of women while increasing human capital investment per child. Using data from the 2010 Labor Force Survey (LFS), fertility and child-completed schooling models using Ordinary Least Squares (OLS), Ordered-Probit, and Probit were constructed to show the quantity-quality transition. The transition implies both slower rates of labor force growth and higher levels of human capital per worker, fundamental components of economic development. The level of education of mothers and fathers, place of residence, and household income were the household variables of interest used to influence the transition. Among the variables considered, mother’s education provides the most convincing evidence of the quantity-quality transition of children in the Philippines.
Paola Perez,Jaime Patiño,Alexis A. Franco,Fernando Rosso,Estefania Beltran,Eliana Manzi,Andrés Castro,Mayra Estacio,Diego Medina Valencia 대한혈액학회 2022 Blood Research Vol.57 No.1
Background Antifungal prophylaxis is recommended for hematopoietic stem cell transplantation (HSCT) to decrease the incidence of invasive fungal infections (IFI). This study aimed to compare the two groups of antifungal prophylaxis in pediatric patients undergoing allogeneic HSCT. Methods This observational, analytic, retrospective cohort study compared the incidence of IFI with antifungal prophylaxis with voriconazole vs. other antifungals in the first 100 days after allogeneic HSCT in patients aged <18 years between 2012 and 2018. The statistical analysis included univariate and multivariate analyses and determination of the cumulative incidence of invasive fungal infection by the Kaplan‒Meier method using STATA 14 statistical software. Results A total of 139 allogeneic HSCT were performed. The principal diagnosis was acute leukemia (63%). The 75% had haploidentical donors, and 50% used an antifungal in the month before transplantation. Voriconazole (69%) was the most frequently administered antifungal prophylaxis. The cumulative incidence of IFI was 5% (7 cases). Of the patients with IFIs, four began prophylaxis with voriconazole, one with caspofungin, and one with fluconazole. Additionally, six were possible cases, one was proven (Candida parapsilosis), and 1/7 died. Conclusion There were no differences in the incidence of IFI between patients who received prophylaxis with voriconazole and other antifungal agents.
Hannah Bardolaza,Jessica Afalla,Alexander De Los Reyes,Deborah Anne Lumantas,John Daniel Vasquez,Joselito Muldera,Valynn Katrine Mag-usara,Armando Somintac,Arnel Salvador,Masahiko Tani,Elmer Estacio 한국물리학회 2019 Current Applied Physics Vol.19 No.6
An externally applied magnetic field was used to induce increased photocarrier transport along the high mobility channel in GaAs/AlGaAs modulation-doped heterostructures (MDH). The terahertz (THz) emission from GaAs/ AlGaAs MDH increases with increasing magnetic field, applied parallel to the heterojunction. The THz emission enhancement factors due to the magnetic field in MDH are higher than in undoped GaAs/AlGaAs heterojunction and in bulk SI-GaAs. This demonstrates that properly utilizing the high-mobility channel for carrier transport promises to be a viable design consideration for efficient THz photoconductive antenna (PCA) devices. Moreover, it was observed that for MDH, as well as for an undoped GaAs/AlGaAs heterojunction, the enhancement for one magnetic field direction is greater than the enhancement for the opposite direction. This is in contrast to the symmetric enhancement with magnetic field direction observed in a bulk SI-GaAs. An analysis of photocarrier trajectories under an external magnetic field supports the explanation that the enhancement asymmetry with magnetic field direction in MDH is due to the cycloid motion of electrons as affected by the GaAs/AlGaAs interface.
Renz Joseph E. Cruz,Francis Von I. Ibardaloza,Arsen Jayz M. Roga,King Lawrence M. Cuizon,Nastaran Reza Nazar Zadeh,Rosalina R. Estacio ASCONS 2019 IJASC Vol.1 No.4
Background/Objectives: Natural light is an essential strategy to reduce energy consumption. Methods/Statistical analysis: New living experiences acquire integration of technology in every aspect of life, and it seeks to help in saving energy which leads to a higher quality of life. Maximizing the use of natural light can reduce power consumption by up to 60% [1]. Findings: This study aims to propose a novel solution for smart rooms to conserve energy in the buildings by integrating the daylight with a curtain and light appliances MPU controller. The system integrates with a servo motor and LDR that control the window curtain to maximize the use of daylight. According to the change of sunshine intensity, this smart curtain controller system designed by adopting the photosensitive element and light-dependent resistor interfaced with Raspberry pi. Improvements/Applications: The proposed system can escalate the user in providing user-friendly operation and comfortable environment.
Cafe Arven I.,De Los Reyes Alexander,Lopez Lorenzo,Husay Horace Andrew,Faustino Maria Angela,Mag-usara Valynn Katrine,Tani Masahiko,Salvador Arnel,Somintac Armando,Estacio Elmer 한국물리학회 2023 Current Applied Physics Vol.50 No.-
We demonstrate the use of the terahertz time-domain spectroscopy (THz-TDS) as a complementary tool in detecting the naturally formed oxide (NFO) layer on a copper metal surface. The THz emission from Cu-metal sheets having NFO were compared with Cu-sheets that were rapidly oxidized between temperatures ranges from 100 ◦C to 500 ◦C for 2 h. Raman spectroscopy and scanning electron microscopy were initially utilized as standard techniques for characterizing the oxide layer. However, the two performed standard techniques could not provide distinguishable results between the NFO and the thin oxide layer grown at temperatures below 200 ◦C. The THz-TDS provides clear results for non-destructive detection of the NFO on the Cu-surface. Excitation-power dependence and magnetic field dependence measurements revealed that the dominant THz emission mechanism is diffusion for CuxO formed below 300 ◦C and drift for thicker oxides grown at temperatures greater than 400 ◦C. The carrier diffusion and carrier drift mechanism are also dependent on the absorption efficiency and structural properties of the oxide layer that was formed. No THz radiation mechanism originating form nonlinear optical process was observed.