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Yukiharu Uraoka,Atsushi Tomyo,Eiji Takahashi,Hiroshi Yano,Kazunori Ichikawa,Kiyoshi Ogata,Prakaipetch Punchaipetch,Takashi Fuyuki,Tomoaki Hatayama,Tsukasa Hayashi 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.2I
We have used side-wall-type plasma-enhanced chemical-vapor deposition (PECVD)to fabricate a floating gate memory using a Si nano-crystal dot on thermal SiO2 at a low temperature of 430 C. Atomic and radical hydrogen plays an important role in the low-temperature formation of the dot. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) analyses revealed that the average dot size and density were approximately 5 nm and 8.5 × 1011 cm.2, respectively. The electronic properties were investigated with metal-oxide-semiconductor-field-effect transistors (MOSFETs) by embedding the nanocrystal dots into SiO2 fabricated using CVD. Electron charging and discharging were clearly confirmed at room temperature by the transient behavior of the capacitance and the transfer curve. The number of electrons confined in a single dot was approximately one. Furthermore, we evaluated the electronic behavior by varying the bias condition or the operating temperature. The critical charge density could be confirmed to be independent of the injection condition.