http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
S. Lee(이승현),D. Go(고도현),K. Kim(김근회),J. An(안지환) Korean Society for Precision Engineering 2021 한국정밀공학회 학술발표대회 논문집 Vol.2021 No.11월
Metal-insulator-metal (MIM) capacitor gets much attention as an energy storage device because of its high-power density. However, it has relatively low energy density compared to other energy storages. Therefore, research for improving energy density of capacitor has been actively conducted using 3D structure with an ultra-high aspect ratio. Recently, Atomic layer deposition (ALD) is widely applied for fabricating MIM capacitor due to its high conformality on the complex structure at the low temperature regime (< 300℃). However, low deposition temperature disrupts the formation of crystallinity which affects the properties of film. For this reason, thin-film crystallization using plasma, known as atomic layer annealing (ALA), is considered due to its precise crystallinity control without heating. In this study, TiO₂ was deposited on Ru electrode using PEALD process. In PEALD process, long plasma exposure time encouraged the formation of rutile-TiO₂, so it presented capacitance density of ~66 nF/㎟ at 1 kHz with the leakage current density of 3.5 × 10<SUP>-7</SUP> at 1 V. In addition, tri-layered structure of TiO₂/ZrO₂/TiO₂ (TZT) is formed to improve insulating property of film. As a result, TiO₂ with 2-nm-thick ZrO₂ showed a capacitance density which is only 3% lower than pure TiO₂, while a leakage current density decreased by 2 orders of magnitude.