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Laser amplification in Yb:YAG thin rods of different geometries: simulation and experiment
Lee, B.,Chizhov, S. A.,Sall, E. G.,Kim, J. W.,Kuznetsov, I. I.,Mukhin, I. B.,Palashov, O. V.,Kim, G. H.,Yashin, V. E.,Vadimova, O. L. The Optical Society 2018 Journal of the Optical Society of America. B, Opti Vol.35 No.10
High average-power ultrafast CPA Yb:KYW laser system with dual-slab amplifier.
Kim, G H,Yang, J,Chizhov, S A,Sall, E G,Kulik, A V,Yashin, V E,Lee, D S,Kang, U Optical Society of America 2012 Optics express Vol.20 No.4
<P>A diode-pumped, ultrafast Yb:KYW laser system utilizing chirped-pulse amplification in a dual-slab regenerative amplifier with spectral shaping of seeding pulse from a master oscillator has been developed. A train of compressed pulses with pulse length of 181 fs, repetition rate up to 200 kHz, and average power exceeding 8 W after compression and pulse picker was achieved.</P>
Development of Compact Femtosecond Yb:KYW Oscillators: Simulation and Experiment
김광훈,Juhee Yang,Elena Sall,Sergey Chizhov,Andrey Kulik,이대식,강욱,Vladimir Yashin 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.3
Numerical simulations and laboratory experiments are conducted for the development of a compact femtosecond diode-pumped Yb:KYW oscillator. For optimizing the oscillator as a seeding source for a regenerative amplifier, we simulated the output power as a function of the transmission of the output coupler, the incident pump power, and the amplification axis of the gain medium by using laser cavity analysis and design (LASCAD) software. Numerical and experimental results show good agreement for both N<sub>p</sub>- and N<sub>m</sub>-polarization for N<sub>g</sub>- and N<sub>p</sub>-cut crystals. The experimental results show that the Nm-polarization oscillator’s average power exceeds 1.2 W at the central wavelength of 1035 nm with a pulse duration 111 fs, which is suitable for the combined gain spectrum of a dual-crystal amplifier.
Egorov, Konstantin V.,Kuzmichev, Dmitry S.,Chizhov, Pavel S.,Lebedinskii, Yuri Yu.,Hwang, Cheol Seong,Markeev, Andrey M. American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.15
<P>The plasma-enhanced atomic layer deposition (PEALD) process using Ta(OC2H5), as a Ta precursor and plasma-activated hydrogen as a reactant for the deposition of TaOx films with a controllable concentration of oxygen vacancies (V-o) is reported herein. The V-o concentration control was achieved by varying the hydrogen volume fraction of the hydrogen-argon mixture in the plasma, allowing the control of the leakage current density in the tantalum oxide films within the range of 5 orders of magnitude compared with the Ta2O5 film grown via thermal ALD using the identical Ta precursor and H2O. Temperature-dependent current-voltage measurements combined with Poole-Frenkel emission modeling demonstrated that the bulk trap depth decreases with the increasing hydrogen volume fraction, which could be attributed to the increase of the V-o concentration. The possible chemical change in the PEALD TaOx films grown under different hydrogen volume fractions was confirmed by the in situ X-ray photoelectron spectroscopy (XPS) measurements of the Ta 4f core and valence band spectra. The comparison of the XPS-measured nonstoichiometry and the secondary ion mass spectrometry analysis of the hydrogen content allowed this study to conclude that the nonstoichiometry is largely related to the formation of Ta-V-o sites rather than of Ta-H sites. Such oxygen-deficient TaOx layers were studied for application as an oxygen-deficient layer in a resistance switching random access memory stack (Ta2O5/TaOx) where the actual switching occurred within the stoichiometric Ta2O5 layer. The bilayer memory stack showed reliable resistance switching up to similar to 10(6) switching cycles, whereas the single-layer Ta2O5 memory showed only several hundred switching cycles.</P>