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A 1.9-GHz Triple-Mode Class-E Power Amplifier for a Polar Transmitter
Park, Changkun,Kim, Younsuk,Kim, Haksun,Hong, Songcheol THE INSTITUTE OF ELECTRICAL ENGINEERS 2007 Vol. No.
<P>A 1.9-GHz CMOS power amplifier for polar transmitters was implemented with a 0.25-mum radio frequency CMOS process. All the matching components, including the input and output transformers, were fully integrated. The concepts of mode locking and adaptive load were applied in order to increase the efficiency and dynamic range of the amplifier. The amplifier achieved a drain efficiency of 33% at a maximum output power of 28dBm. The measured dynamic range was 34dB for a supply voltage that ranged from 0.7 to 3.3V. The measured improvement of the low power efficiency was 140% at an output power of 16dBm</P>
CMOS power cell with improved junction breakdown using interdigitated body contact
Park, Changkun,Han, Jeonghu,Hong, Songcheol Wiley Subscription Services, Inc., A Wiley Company 2007 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS - Vol.49 No.12
<P>A power-cell for RF power applications is designed using 0.35-μm standard CMOS technology. An interdigitated body contact method is proposed and applied to a RF power-cell. A total gate width of the designed power-cell is 3.2 mm. The proposed RF power-cell has a higher junction breakdown voltage than that of a conventional RF power-cell. The breakdown voltage of the proposed CMOS power-cell at zero gate voltage was found to be ∼8 V. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 3085–3087, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22908</P>