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Piezoelectric properties of aluminum nitride for thin film bulk acoustic wave resonator
Kuangwoo Nam,kuangwoo Nam,Byeongju Ha,심동하,Gwangseo Park,Insang Song,Jaemoon Pak,Yunkwon Park 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.2
A film bulk acoustic wave resonator (FBAR) was fabricated by using RF-sputtered aluminum nitride (AlN) between 400 nm-thick molybdenum (Mo) bottom and top electrodes. To reduce the acoustic loss of FBARs, an air gap cavity is fabricated below the membrane by a silicon deep-etch process. The sputtered 950 nm-thick AlN film was oriented in the (002) direction. The FBARs were measured by using a HP 8510C vector network analyzer in a wide frequency range of 0.5 10.5 GHz. A resonance frequency was observed near 2 GHz as well as another, a third mode about 7 GHz. The minimum insertion loss was 0.056 dB at 1858 MHz. An equivalent circuit modeling regarding this FBAR was performed with modified Butterworth Van-Dyke (MBVD) models, wellknown piezoelectric equivalent circuit models. The calculated effective electromechanical coupling coefficient (k2 eff ) was greater than 6.59 %.lf.s