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초박막 CsF/Al 전극 두께에 따른 유기발광소자의 양자효율 개선
盧柄奎(Byeong-Gyu Roh),金仲淵(Jung-Yeoun Kim),吳煥述(Hwan-Sool Oh) 大韓電子工學會 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.12
본 논문에서는 유리기판 위에 공액고분자 물질인 MEH-PPV를 스핀 코팅한 후 Al 전극 사이에 초박막의 CsF층을 진공증착으로 삽입한 유기발광소자를 제안하였다. 이러한 구조에서 CsF층은 음극을 통해 주입된 전자들이 원활히 발광층으로 전송되어 유기발광소자의 발광효율을 증대시켰다. 또한 CsF층의 두께변화를 2Å, 4Å, 8Å, 10Å, 20Å, 50Å, 75Å으로 변화를 주어 전류- 전압 발광 특성을 조사하였다. 그리고 CsF/Al와 CsF/Au 및 Cs/Au 전극을 각각 진공증착하여 비교하였다. CsF총 두께가 4Å애서 양자효율이 0.6%로 최대값을 나타냈고 8Å 이상에선 효율이 감소하였지만 CsF층이 없는 순수한 Al전극층에서 효율이 0.01%인 것에 비해 높은 양자효율 값을 유지하였다. In this paper, we propose the organic light-emitting devices with vacuum evaporated ultrathin CsF layer between the Al electrode and conjugated polymer MEH-PPV which was spin coated. In this structure, the CsF layer will be well transferred the electron injection from the electrode to the emission layer MEH-PPV. Finally this structure enhances the emission efficiency of the organic light-emitting device. And we measured the I-V-L properties with the split of CsF thickness into the 2Å, 4Å, 8Å, 10Å, 20Å, 50Å, 75Å respectively. And also we evaporated CsF/Al, CsF/Au Cs/Au electrode respectively for the comparison. As the results, we obtained the maximum quantum efficiency 0.6% at 4Å CsF thickness and then at 8Å, it decreased a little but it’s still better than pure AI electrode which has 0.01%.
Issues and Challenges on SDN-based Management for Future Tactical Networks
Gyu-min Lee,Cheol-woong Lee,Hojin Lee,Byeong-hee Roh 한국차세대컴퓨팅학회 2022 한국차세대컴퓨팅학회 학술대회 Vol.2022 No.10
The future tactical networks (FTNs) are expanding and evolving from the existing terrestrial space-oriented operational structure to multi-space architectures, including aerial and satellite spaces. This may lead to the complexity of interoperability to provide seamless connectivity among complex and numerous elements such as heterogeneous networks and devices constituting FTNs. Software Defined Networking (SDN) has been recognized as one of the most suitable solutions to solve interoperability problems, especially in terms of networking. In this paper, we consider the issues and challenges to be considered in applying SDN to FNTs.
1MeV 인 이온 주입시 RTA에 의한 미세결함 특성과 latch-up 면역에 관한 구조 연구
노병규,윤석범,Roh, Byeong-Gyu,Yoon, Seok-Beom 한국전기전자학회 1998 전기전자학회논문지 Vol.2 No.1
인(Phosphorus)을 1MeV로 이온 주입한 후 RTA를 실시하여 미세결함의 특성을 조사하고, 면저항, SRP, SIMS, XTEM 분석과 CMOS 구조에서 래치업 특성을 모의 실험하였다. 도즈량이 증가할수록 면저항은 낮아지고, Rp값은 도즈량이 $1{\times}10^{13}/cm^2,\;5{\times}10^{13}/cm^2,\;1{\times}10^{14}/cm^2$일때 각각 $1.15{\mu}m,\;1.15{\mu},\;1.10{\mu}m$로 나타났다. SIMS 측정결과는 열처리 시간이 길수록 농도의 최대치가 표면으로부터 깊어지고, 농도 또한 낮아짐을 확인하였다. XTEM 분석 결과는 열처리 전에는 결함측정이 불가능했으나, 측정되지 많은 미세결함이 열처리 후 이차결함으로 성장한 것으로 조사되었다. 모의 실험은 buried layer와 connecting layer 구조를 사용하였으며, buried layer보다 connecting layer가 래치업 특성이 우수함을 확인하였다. Connecting layer의 도즈량이 $1{\times}10^{14}/cm^2$이고 이온주입 에너지가 500KeV일 때 trigger current는 $0.6mA/{\mu}m$이상이었고, trigger voltage는 약 6V로 나타났다. Connecting layer의 이온주입 에너지가 낮을수록 래치업 저감효과가 더욱 우수함을 알 수 있었다. This paper is studied micro-defect characteristics by phosphorus 1MeV ion implantation and Rs, SRP, SIMS, XTEM for the RTA process was measured and simulated. As the dose is higher, the Rs is lower. When the dose are $1{\times}10^{13}/cm^2,\;5{\times}10^{13}/cm^2,\;1{\times}10^{14}/cm^2$, the Rp are $1.15{\mu}m,\;1.15{\mu},\;1.10{\mu}m$ respectively. As the RTA time is longer, the maximum concentration position is deeper from the surface and the concentration is lower. Before the RTA was done, we didn't observe any defect. But after the RTA process was done, we could observe the RTA process changed the micro-defects into the secondary defects. The simulation using the buried layer and connecting layer structure was performed. As results, the connecting layer had more effect than the buried layer to latch-up immune. Trigger current was more $0.6mA/{\mu}m$ and trigger voltage was 6V at dose $1{\times}10^{14}/cm^2$ and the energy 500KeV of connecting layer Lower connecting layer dose, latch-up immune characteristics was better.
Kim, Jae-Hoon,Cho, Byeong-Hoon,Lee, Jin-Hee,Kwon, Soo-Jung,Yi, Young-Ah,Shin, Yooseok,Roh, Byoung-Duck,Seo, Deog-Gyu Informa Healthcare 2015 Acta odontologica scandinavica Vol.73 No.2
<P><B><I>Objective.</I></B> This study investigated the influence of preparation design on the marginal and internal gap and ceramic thickness of partial ceramic crowns (PCCs) fabricated with the CEREC 3 system. <B><I>Materials and methods.</I></B> Sixteen extracted human mandibular molars were prepared according to two different preparation designs (<I>n</I> = 8): a retentive preparation design with traditional cusp capping (Group I) and a non-retentive preparation design with horizontal reduction of cusps (Group II). PCCs were fabricated from IPS Empress CAD with the CEREC 3 system. The parameters for luting space and minimum occlusal ceramic thickness were set to 30 μm and 1.5 mm, respectively. The fabricated PCCs were cemented to their corresponding teeth with self-adhesive resin cement and were then scanned by micro-computed tomography. The marginal and internal gaps were measured at pre-determined measuring points in five bucco-lingual and three mesio-distal cross-sectional images. The ceramic thicknesses of the PCCs were measured at the measuring points for cusp capping areas. <B><I>Results.</I></B> Group II (167.4 ± 76.4 μm) had a smaller overall mean gap, which included the marginal and internal gap measurements, than that of Group I (184.8 ± 89.0 μm). The internal gaps were larger than the marginal gaps, regardless of preparation design. Group I presented a thinner ceramic thickness in the cusp capping areas than the minimum occlusal ceramic thickness parameter of 1.5 mm. <B><I>Conclusion.</I></B> Preparation design had an influence on fit, particularly the internal gap of the PCCs. Ceramic thickness could be thinner than the minimum ceramic thickness parameter.</P>