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Low LO Power V-Band CPW Down-Converter Using a GaAs PHEMT
DanAn,BokHyungLee,YeonSikChae,HyunChangPark,HyungMooPark,이진구 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
We have designed and fabricated a low local oscillator (LO) power V-band coplanar waveguide (CPW) down-converter using GaAs Pseudomorphic high electron mobility transistor (PHEMT) technology for applications to millimeter-wave wireless communication systems. The down-converter was designed using a MIMIC library, including a 0.1-$\mu$m GaAs PHEMT and CPW transmission lines. The fabricated down-converter exhibited a good conversion gain of 2 dB at a low LO power of 0 dBm. The 1 dB compression point was $-$5.2 dBm for an RF input power of $-$6 dBm. Isolations between the LO port and other ports were excellent. The total chip size was 1.8$\times$1.7 mm.
A 20 W GaN-based Power Amplifier MMIC for X-band Radar Applications
Bok-Hyung Lee,Byung-Jun Park,Sun-Youl Choi,Byeong-Ok Lim,Joo-Seoc Go,Sung-Chan Kim 한국전기전자학회 2019 전기전자학회논문지 Vol.23 No.1
In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial 0.25 μm GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of 200 μs and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are 3.5 mm × 2.3 mm, generating the output power density of 2.71 W/mm². Its power added efficiency (PAE) is 42.6–50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.
Q-band high conversion gain active sub-harmonic mixer
Bok Hyung Lee,Sung Chan Kim,Mun Kyo Lee,Woo Suk Sul,Byeong Ok Lim,Won Young Uhm,이진구 한국물리학회 2004 Current Applied Physics Vol.4 No.1
In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of mil-limeter-wave wireless communication systems. The fabricated active sub-harmonic mixer used second harmonic signals of a lowlocal oscillator (LO) frequency. The fabricated mixer were successfully integrated by using a 0.1l m GaAs pseudomorphic HEMT’sand a coplanar waveguide structure. We showed that the highest conversion gain of 4.8 dB has obtained at a LOfrequency of 17.5GHz and a RF frequency of 40 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far.The active sub-harmonic mixer also ensure a high degree of isolations, which are)35.8 dB from LO-to-IF and)40.5 dB from LO-to-RF, respectively, at a LOfrequency of 17.5 GHz.