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      • Multiculturalism and Multilingualism in Mughal India

        Abu Musa Mohammad Arif Billah 국제인문사회연구학회 2022 Studies on Humanities and Social Sciences (SHSC) Vol.4 No.1

        Multiculturalism and Multilingualism in Mughal India* Abu Musa Mohammad Arif Billah** Abstract: Mughal India is an important part of the political history of the subcontinent which nowadays is divided into three independent states – India, Pakistan and Bangladesh. Mughal dynasty was established by Zahir Uddin Muhammad Babur (1483–1530 AD) in 1526 AD and continued until 1857 AD. In regard to the origin and development of multiculturalism and multilingualism in the Indian subcontinent, it is worthwhile to mention that India had been a place of attraction for people of varied interests since the dawn of human civilization. Consequently, huge numbers of foreign travelers settled here since time immemorial which pushed the Indian civilization to go through numerous paradigm shifts. Such scope for amalgamation and exchange of views between the locals and settlers, resulted in the manifestation of individual cultural and linguistic identity for each group of people that was living there. And this is actually the prime underlying cause for the emergence of multiculturalism and multilingualism in the Indian subcontinent. This study endeavors to unfold the hidden secrets of both multicultural eminences and multilingual munificence that exist in the region in general and of Mughal India in particular. The current paper attempts to address the above mentioned issues elucidating the relevant aspects of the topic using both primary and secondary sources. Key Words: India, Multiculturalism, Multilingualism, Shahabuddin Ghori, Mughal Dynasty, Zahir Uddin Babur. □ Received: June 10, 2022, Revised: June 20, 2022, Accepted: June 30, 2022 * This research article was developed as a prime part of my Post-Doctoral Research at the Education Research Institute, Ethics Education Department, Geyongsang National University (GNU), Jinju, South Korea, on the invitation of Professor Dr. Gyun Yeol Park, Ethics Education Department, GNU. ** PhD at SOAS, University of London, Adjunct Professor, Pundra University of Science and Technology, Bogura, Bangladesh; Founder Chairman, Abu Rayhan Biruni Foundation, Dhaka, Bangladesh Multiculturalism and Multilingualism in Mughal India* Abu Musa Mohammad Arif Billah** Abstract: Mughal India is an important part of the political history of the subcontinent which nowadays is divided into three independent states – India, Pakistan and Bangladesh. Mughal dynasty was established by Zahir Uddin Muhammad Babur (1483–1530 AD) in 1526 AD and continued until 1857 AD. In regard to the origin and development of multiculturalism and multilingualism in the Indian subcontinent, it is worthwhile to mention that India had been a place of attraction for people of varied interests since the dawn of human civilization. Consequently, huge numbers of foreign travelers settled here since time immemorial which pushed the Indian civilization to go through numerous paradigm shifts. Such scope for amalgamation and exchange of views between the locals and settlers, resulted in the manifestation of individual cultural and linguistic identity for each group of people that was living there. And this is actually the prime underlying cause for the emergence of multiculturalism and multilingualism in the Indian subcontinent. This study endeavors to unfold the hidden secrets of both multicultural eminences and multilingual munificence that exist in the region in general and of Mughal India in particular. The current paper attempts to address the above mentioned issues elucidating the relevant aspects of the topic using both primary and secondary sources. Key Words: India, Multiculturalism, Multilingualism, Shahabuddin Ghori, Mughal Dynasty, Zahir Uddin Babur. □ Received: June 10, 2022, Revised: June 20, 2022, Accepted: June 30, 2022 * This research article was developed as a prime part of my Post-Doctoral Research at the Education Research Institute, Ethics Education Department, Geyongsang National University (GNU), Jinju, South Korea, on the invitation of Professor Dr. Gyun Yeol Park, Ethics Education Department, GNU. ** PhD at SOAS, University of London, Adjunct Professor, Pundra University of Science and Technology, Bogura, Bangladesh; Founder Chairman, Abu Rayhan Biruni Foundation, Dhaka, Bangladesh

      • Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation

        Billah, Mohammad Masum,Delwar Hossain Chowdhury, Md,Mativenga, Mallory,Jae Gwang Um,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy John,Jin Jang IEEE 2016 IEEE electron device letters Vol.37 No.6

        <P>We report the numerical simulation of the effect of a dual gate (DG) TFT structure operating under dual gate driving on improving negative bias illumination stress (NBIS) of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). With respect to the transfer characteristics of a-IGZO TFTs, we show a larger negative threshold voltage shift (ΔVTH) with increasing a-IGZO active layer thickness. This trend is confirmed by TCAD simulation, where the initial transfer curve is plotted under varying a-IGZO thickness keeping a constant density of states. Under varying a-IGZO thickness, TCAD simulation results confirm TFTs under DG driving shows significantly less ΔVTH shift under NBIS compared with that of single gate (SG) driving TFTs. Under 10 K seconds of NBIS, TCAD simulation results show the increase in donor-like states (NGD) by 5.25 × 10<SUP>17</SUP> cm<SUP>-3</SUP> eV<SUP>-1</SUP> and acceptor-like states (NGA) by 7.5 × 10<SUP>16</SUP> cm<SUP>-3</SUP> eV<SUP>-1</SUP>.</P>

      • Millisecond Positive Bias Recovery of Negative Bias Illumination Stressed Amorphous InGaZnO Thin-Film Transistors

        Billah, Mohammad Masum,Jang, Jin IEEE 2017 IEEE electron device letters Vol.38 No.4

        <P>This letter demonstrates a short-time pulsed positive bias recovery (PBR) of the degraded performance of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors (TFTs) under negative bias illumination stress (NBIS) with the IGZO of In: Ga: Zn = 3: 2: 1 atomic ratio. By applying simultaneous gate and drain voltages (VG = VD = 35 V) for a very short duration (10(-3) s) after NBIS, the performance could be completely recovered. TCAD simulation confirms that the temperature increases up to 410 degrees C by 35 V PBR, which accelerates the neutralization of generated interface charges and bulk donors by capturing electrons and then relax back to the pristine state.</P>

      • Reduced Mechanical Strain in Bendable a-IGZO TFTs Under Dual-Gate Driving

        Billah, Mohammad Masum,Han, Ji-Ung,Hasan, Md Mehedi,Jang, Jin IEEE 2018 IEEE electron device letters Vol.39 No.6

        <P>We report the reduced strain in bendable amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) with dual-gate (DG) driving. The performance of the fabricated TFTs on a 15- <TEX>$\mu \text{m}$</TEX> polyimide substrate are sensitive to bending radius and the changes in threshold voltage ( <TEX>$\Delta \mathrm {V}_{\mathrm {TH}}$</TEX>) fits well by analytical modeling. DG driving TFTs are found very stable under tensile strain ( <TEX>$\varepsilon$</TEX>) compared with single-gate (SG) TFTs. Technology computer-aided design strain distribution confirms a 25% less strain on a-IGZO layer for DG TFT structure compared with SG TFT and the maximum tensile strain is observed at the center of the TFT channel. The SG and DG TFTs under 1 mm radius exhibit <TEX>$\Delta \mathrm {V}_{\mathrm {TH}}$</TEX>(V) shift of −1.5 and −0.3 V, respectively, from the flat state, which is due to the reduced strain in the DG TFT.</P>

      • TCAD Simulation of Dual-Gate a-IGZO TFTs With Source and Drain Offsets

        Billah, Mohammad Masum,Hasan, Md Mehedi,Chun, Minkyu,Jang, Jin IEEE 2016 IEEE electron device letters Vol.37 No.11

        <P>We investigate the effect of offset between source/drain (S/D) and gate electrodes (both top gate (TG) and bottom gate (BG)) on the electrical performance of dual-gate (DG) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The performance of the fabricated TFTs measured by BG sweep under various TG potentials are well fitted by TCAD simulation with the same density of states, which does not change with the device structure. The field-effect mobility is 15.5 cm(2)/Vs for the TFT with overlapped S/D electrodes, but it is less than 1 cm(2)/Vs for the offset TFTs. The low carrier concentration of similar to 10(16) cm(-3) at the offset a-IGZO region is achieved by TCAD simulation, which increases the contact resistance, and thus induces current crowding and lower mobility in DG offset TFTs.</P>

      • Effect of Tensile and Compressive Bending Stress on Electrical Performance of Flexible a-IGZO TFTs

        Billah, Mohammad Masum,Hasan, Md Mehedi,Jang, Jin IEEE 2017 IEEE electron device letters Vol.38 No.7

        <P>We report the changes in device performance of flexible amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) by 1.65% tensile or compressive bending stress for 10 k times. The TFTs exhibit negative threshold voltage (Delta V-Th) shift and enhanced drain current (I-D). TFT performance under repetitive tensile bending stress exhibits comparatively large threshold voltage shift (Delta V-Th = -2.3 V) than compressive bending stress (Delta V-Th = -0.9 V), which might be originated from both the generation of interface states (N-int) and gap trap density (dN(gap)/dE) by 3.5 x 10(11)/cm(2) and 5.7 x 10(12)/cm(2) eV, respectively under tensile bending stress. These are much higher than those (N-int: 1.2 x 10(11)/cm(2) and dN(gap)/dE: 2.2 x 10(12)/cm(2)eV) for compressive bending. The increase in the DOS appears after both types of the bending stress which is related to the generation of oxygen vacancies. According to technology computer aided design simulation, the 10 k times repetitive compressive bending stress generates donor like states (Delta N-GD) similar to 2 x 10(16) cm(-3) and tensile bending stress generates Delta N-GD similar to 9.5 x 10(16) cm(-3) at similar to E-C -0.35 eV.</P>

      • KCI등재

        Gastrointestinal polyp detection in endoscopic images using an improved feature extraction method

        Mustain Billah,Sajjad Waheed 대한의용생체공학회 2018 Biomedical Engineering Letters (BMEL) Vol.8 No.1

        Gastrointestinal polyps are treated as the precursorsof cancer development. So, possibility of cancerscan be reduced at a great extent by early detection andremoval of polyps. The most used diagnostic modality forgastrointestinal polyps is video endoscopy. But, as anoperator dependant procedure, several human factors canlead to miss detection of polyps. In this peper, an improvedcomputer aided polyp detection method has been proposed. Proposed improved method can reduce polyp miss detectionrate and assists doctors in finding the most importantregions to pay attention. Color wavelet features and convolutionalneural network features are extracted fromendoscopic images, which are used for training a supportvector machine. Then a target endoscopic image will begiven to the classifier as input in order to find whether itcontains any polyp or not. If polyp is found, it will bemarked automatically. Experiment shows that, colorwavelet features and convolutional neural network featurestogether construct a highly representative of endoscopicpolyp images. Evaluations on standard public databasesshow that, proposed system outperforms state-of-the-artmethods, gaining accuracy of 98.34%, sensitivity of98.67% and specificity of 98.23%. In this paper, thestrength of color wavelet features and power of convolutionalneural network features are combined. Fusion ofthese two methodology and use of support vector machineresults in an improved method for gastrointestinal polypdetection. An analysis of ROC reveals that, proposedmethod can be used for polyp detection purposes withgreater accuracy than state-of-the-art methods.

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