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Nonvolatile Semiconductor Memories Using BT-Based Ferroelectric Films
Beelyong Yang,홍석경 한국세라믹학회 2004 한국세라믹학회지 Vol.41 No.4
We report ferroelectric memories based on 0.35 m CMOS technology ensuring ten-year retention and imprint at 175 oC. This excellent reliability resulted from newly developed BT-based ferroelectric films with superior reliability performance at high temperatures, and also resulted from robust integration schemes free from ferroelectric degradation due to process impurities such as moisture and hydrogen. The superior reliabilities at high temperature of ferroelectric memories using BT-based films are due to the random orientation by special bake treatments.
Integration Process and Reliability for SrBi₂ Ta₂O<SUB>9</SUB>-based Ferroelectric Memories
Beelyong Yang,Seaung-Suk Lee,Young Min Kang,Kunm Hwan Noh,Suk Kyoung Hong,Sang Hyun Oh,Eung Youl Kang,Seok Won Lee,Jin Gu Kim,Chung Won Suh,Jin Yong Seong,Chang-Goo Lee,Nam Soo Kang,Young-Jin Park 대한전자공학회 2001 Journal of semiconductor technology and science Vol.1 No.3