http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors
Avis, Christophe,Kim, Youn Goo,Jang, Jin The Royal Society of Chemistry 2012 Journal of materials chemistry Vol.22 No.34
<P>We report a solution processed high-<I>k</I> hafnium oxide (HfO<SUB><I>x</I></SUB>) dielectric used for a solution processed zinc-tin-oxide (ZTO) thin-film transistor (TFT) at the maximum process temperature of 300 °C. The HfO<SUB><I>x</I></SUB> is close to stoichiometric composition (35% hafnium and 65% oxygen), has no impurity related to the solvent or precursor used, and exhibits an amorphous structure. The HfO<SUB><I>x</I></SUB> is smooth enough, with a rms roughness of 0.33 nm, to be used as a gate insulator for TFT. The ZTO TFT with HfO<SUB><I>x</I></SUB> exhibits a threshold voltage of 1.18 V, a gate voltage swing of 105 mV per decade, and a field-effect mobility in the saturation region of 1.05 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>. The resulting TFT properties are impacted by the formation of nanopores at the HfO<SUB><I>x</I></SUB>/ZTO interface and nanocrystals at the HfO<SUB><I>x</I></SUB>/IZO (source/drain) interface.</P> <P>Graphic Abstract</P><P>We report a solution processed high-<I>k</I> hafnium oxide (HfO<SUB><I>x</I></SUB>) dielectric used for a solution processed zinc-tin-oxide thin-film transistor at the maximum process temperature of 300 °C. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c2jm33054g'> </P>
Avis, Christophe,Hwang, Hye Rim,Jang, Jin American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.14
<P>We report the fabrication of high field-effect mobility of ∼110 cm<SUP>2</SUP>/(V s) for inkjet printed indium–zinc-tin oxide (IZTO) thin film transistors (TFTs). It is found that the morphology of IZTO material deposited by inkjet printing depends strongly on its thickness. When the thickness is 35 nm, IZTO is an homogeneous amorphous material and the TFT exhibits mobility over 100 cm<SUP>2</SUP>/(V s) and on/off current ratio of >10<SUP>6</SUP>. However, when the thickness is 85 nm, IZTO has a two layer structure of homogeneous and heterogeneous materials and thus the TFT exhibited a mobility of ∼20 cm<SUP>2</SUP>/(V s). When the thickness is 800 nm, the morphology is porous and heterogeneous and thus the on/off current ratio is less than 1 × 10<SUP>3</SUP> and its mobility is ∼14 cm<SUP>2</SUP>/(V s). It is concluded therefore that homogeneous amorphous IZTO TFT on Al<SUB>2</SUB>O<SUB>3</SUB> gate insulator can show high mobility, which can be achieved by thin layer formation by inkjet printing.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-14/am501153w/production/images/medium/am-2014-01153w_0007.gif'></P>
B-Ion Doping Effect in ZnO Thin-Films
Christophe Avis,김세환,김가현,홍성준,Youn Duck Nam,Ji Ho Hur,장진 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.1
We studied the effect of boron ion doping on the properties of zinc oxide (ZnO) thin-film. Xray diffraction (XRD) and Raman intensities were analyzed to see the change in the structural property and the Hall effect was measured to have an insight into the carrier concentration and the Hall mobility for the B-ion doped ZnO films. A doped ZnO film exhibited a sheet resistance of ∼0.9 kohm/square and a Hall mobility of ∼22 cm<SUP>2</SUP>/Vs. Therefore, B doping can be used to modify the conductivity of the ZnO.
Effect of DC Power on the Structural and the Electrical Properties of B-ion-doped ZnO Films
Christophe Avis,Se Hwan Kim,Ji Ho Hur,Sung Jun Hong,Jin Jang 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
We fabricated zinc-oxide (ZnO) thin films by DC sputtering at various DC powers after which the films were doped with boron ions. With increasing DC power, the crystalline quality improved, the Hall mobility increased and the sheet resistance decreased. DC-sputtered samples showed an increase in Hall mobility from 2.44 to 18.6 cm2/Vs and a decrease in the resistivity from 75.8 to 5.26 mΩ·cm when the DC current was increased from 0.3 A to 1.5 A. We fabricated zinc-oxide (ZnO) thin films by DC sputtering at various DC powers after which the films were doped with boron ions. With increasing DC power, the crystalline quality improved, the Hall mobility increased and the sheet resistance decreased. DC-sputtered samples showed an increase in Hall mobility from 2.44 to 18.6 cm2/Vs and a decrease in the resistivity from 75.8 to 5.26 mΩ·cm when the DC current was increased from 0.3 A to 1.5 A.
Youn Goo Kim,Avis, Christophe,Hye Rim Hwang,Tae Woong Kim,Young Gog Seol,Jin Jang IEEE 2014 Journal of display technology Vol.10 No.11
<P>We fabricated bottom-gate, bottom-contact oxide thin-film transistors (TFTs) using solution-processed strontium -doped zinc-tin-oxide (SrZTO) as the active material and high-κ aluminum oxide (AlOx) gate insulator at the maximum process temperature of 300 °C. The effect of Sr content on the device performance of the SrZTO TFTs was investigated, where Sr was changed from 0 to 20%. With increasing Sr concentration, threshold voltage shifted to the positive voltage, since the incorporation of Sr reduces the density of oxygen vacancy in ZTO. The mobility increases and threshold voltage shift to positive voltage with increasing Sr, and a 5% Sr doped ZTO transistor with AlOx gate insulator exhibited the field effect mobility of 7.82 cm<SUP>2</SUP>/V·s, subthreshold swing of 121 mV/dec, and threshold voltage of 0.71 V. It is found that the threshold voltage shifts by negative bias illumination stress decrease with increasing Sr.</P>