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- 저자 : Anwar Manzoor Rana (검색결과 4 건)
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Rana, Anwar Manzoor,Ismail, Muhammad,Akber, Tahira,Younus Nadeem, M.,Kim, Sungjun Elsevier 2019 Materials research bulletin Vol.117 No.-
<P><B>Abstract</B></P> <P>We report the transition from unipolar to bipolar switching, multilevel resistive switching, abrupt and gradual reset phenomena in a TaN/CeO<SUB>2</SUB>/Ti: /Pt memory devices. Multilevel resistive switching can be successfully obtained by varying the current compliance in the set process. It was observed that increasing the value of current compliance during the set process decreases the set voltages of the devices and as well as deceases the low and high resistance states, respectively. In addition, we have also observed coexistence of abrupt and gradual reset transition in a Ta/CeO<SUB>2</SUB>/Ti: /Pt memory cell. The device exhibits the excellent bipolar resistive switching characteristics such as endurance performance, device-to-device variability (D2D) and good retention time 10<SUP>4</SUP> s. The oxidation of the TaN top electrode creates an Ohmic contact with CeO<SUB>2</SUB> film and hence injects positively charged oxygen vacancies into the switching layer which looks to be responsible for resistive switching.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Transition from unipolar to bipolar switching in a Ta/CeO<SUB>2</SUB>/Ti: /Pt memory device was investigated. </LI> <LI> Multilevel resistive switching can be successfully obtained by varying the current compliance in the set process. </LI> <LI> Increasing the value of current compliance during the set process deceases the low and high resistance states. </LI> <LI> Electrical conduction mechanism is dominated by Schottky emission at high field regions of abrupt and gradual modes. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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Ismail, Muhammad,Talib, Ijaz,Rana, Anwar Manzoor,Akbar, Tahira,Jabeen, Shazia,Lee, Jinju,Kim, Sungjun Springer US 2018 NANOSCALE RESEARCH LETTERS Vol.13 No.1
<P>Memory devices with bilayer CeO<SUB>2−x</SUB>/ZnO and ZnO/CeO<SUB>2−x</SUB> heterostructures sandwiched between Ti top and Pt bottom electrodes were fabricated by RF-magnetron sputtering at room temperature. N-type semiconductor materials were used in both device heterostructures, but interestingly, change in heterostructure and electroforming polarity caused significant variations in resistive switching (RS) properties. Results have revealed that the electroforming polarity has great influence on both CeO<SUB>2−x</SUB>/ZnO and ZnO/CeO<SUB>2−x</SUB> heterostructure performance such as electroforming voltage, good switching cycle-to-cycle endurance (~ 10<SUP>2</SUP>), and ON/OFF ratio. A device with CeO<SUB>2−x</SUB>/ZnO heterostructure reveals good RS performance due to the formation of Schottky barrier at top and bottom interfaces. Dominant conduction mechanism of high resistance state (HRS) was Schottky emission in high field region. Nature of the temperature dependence of low resistance state and HRS confirmed that RS is caused by the formation and rupture of conductive filaments composed of oxygen vacancies.</P>
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Induced Magnetic Properties of BN Nanotubes by the Adsorption of First-row Adatoms
Fayyaz Hussain,Muhammad Imran,Nimra Fatima,Anwar Manzoor Rana,R. M. Arif Khalil,Arshad Javid,Muhammad Ismail 한국자기학회 2018 Journal of Magnetics Vol.23 No.1
This work is performed to study the effect of adsorption of various first row adatoms (such as Be, C, F, Li and O) on (8, 0) zigzag boron nitride nanotubes (BNNTs) on their structural, electronic and magnetic properties. These calculations are based on density functional theory using pseudopotentials technique. For this purpose, five different sites namely axial, hexagonal, zigzag, on top of N and/or B (which are the most preferred available sites for adatoms on (8, 0) BNNTs) were utilized. The energetically stable sites for each of the first-row adatoms are found to be different because of their different electronic configurations caused by the charge transfer/ rearrangements between s-p or p-p orbitals. The binding energies of all adatoms on (8, 0) BNNTs have been calculated through structural optimization process after adsorbing these five adatoms at the above said sites on the BNNTs and are found to be in the energy range from -2.04 to 2.96 eV. It is further elaborated that F, Be and C adatoms on (8, 0) BNNTs show strong induced magnetization at specific localized sites depending upon the nature of adatom, whereas weak magnetization is noticed for Li and O adatoms on the BNNTs. Such localized induced magnetization could be associated with the hybridization of s-p or p-p orbitals of adatoms and B and/or N atoms.
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Muhammad Ismail,Shazia Jabeen,Tahira Akber,Ijaz Talib,Fayyaz Hussain,Anwar Manzoor Rana,Muhammad Hussain,Khalid Mahmood,Ejaz Ahmed,Dinghua Bao 한국물리학회 2018 Current Applied Physics Vol.18 No.8
Effect of oxygen annealing on bipolar resistive switching (BRS) properties of TiN/ZnO/CeO2-x/Pt devices was investigated. Bilayer ZnO/CeO2-x thin films were fabricated by rf-magnetron sputtering. It was observed that the improvement in cycle-to-cycle endurance degradation and uniformity of the bilayer ZnO/CeO2-x thin film is optimum at 400 °C annealing temperature due to decrease in oxygen vacancies during annealing, as confirmed by x-ray photoelectron spectroscopy. The BRS could be caused by the formation of interfacial TiON layer, which is most likely to be accountable for creating an adequate quantity of oxygen vacancies necessary for the formation and rupture of conductive filaments. Smaller Gibbs free energy of the formation of interfacial TiON (−611 kJmol−1) layer as compared to bilayer film ZnO (−650 kJmol−1) and CeO2 (−1024 kJmol−1) results in an easier re-oxidation of the filaments through the oxygen exchange with TiN top electrode. The analysis of current– voltage characteristics shows that the charge transport mechanism is Schottky emission. Moreover, the temperature dependence of high resistance state (HRS) and low resistance state (LRS) revealed the physical origin of the RS mechanism, which entails the oxygen vacancies for the formation and rupture of conducting paths.
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