http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Alexander M. Efremov (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
Surface Kinetics of Bi4-xLaxTi3O12 Films Etched in a CF4/Ar Gas Chemistry
Dong-Pyo Kim,김창일,Alexander.M.Efremov,Kyoung-Tae Kim 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.1
The surface reactions and the etch rate of Bi4ကxLaxTi3O12(BLT) lms in a CF4/Ar plasma were investigated in an inductively coupled plasma (ICP) reactor in terms of the gas mixing ratio. The variation of relative volume densities for the F and the Ar atoms were measured with optical emission spectroscopy (OES). The maximum etch rate of 803 A/min was obtained in a CF4(20 %)/Ar(80 %) plasma. The presence of a maximum in the BLT etch rate at CF4(20 %)/Ar(80 %) may be explained by the concurrence of two etching mechanisms, physical sputtering and chemical reaction. Ar-ion bombardment played roles of destroying the metal (Bi, La, Ti)-O bonds and assisting the chemical reaction between metal and uorine atoms. The chemical states of BLT were investigated using X-ray photoelectron spectroscopy (XPS), which conrmed the existence of nonvolatile etch byproducts (La- uorides).
-
Mansu Kim,민남기,Sun Jin Yun,Hyun Woo Lee,Alexander M. Efremov,권광호 한국전자통신연구원 2008 ETRI Journal Vol.30 No.3
The etching mechanism of ZrO2 thin films and etch selectivity over some materials in both BCl3/Ar and BCl3/CHF3/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In BCl3/Ar plasma, changes in gas mixing ratio result in nonlinear changes of both densities and fluxes for Cl, BCl2, and BCl2 +. In this work, it is shown that the nonmonotonic behavior of the ZrO2 etch rate as a function of the BCl3/Ar mixing ratio could be related to the ionassisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% CHF3 to the BCl3-rich BCl3/Ar plasma does not influence the ZrO2 etch rate, but it non-monotonically changes the etch rates of both Si and SiO2. The last effect can probably be associated with the corresponding behavior of the F atom density.
ScienceON연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
