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Carbon Black-PVC 化合物의 電氣電導率에 관한 硏究
李明敎 釜山工業大學校 1984 論文集 Vol.26 No.-
Electrical conductivity and resitivity of carbon black-polyvinyl chloride(PVC) composites were studied. Conductivity of the bulk composites increase with higher volume fraction of carbon black as expected. However, the functional dependence of the increasing conductivity with carbon black loading is different below and above the percolation threshold because of the different mechanisms involved. Such highly loaded composites showed a metal like electrical behavior. When the loading of carbon black is below the percolation threshold, the conductivity between the grains of carbon black is expected to be primarily via hopping and tunneling mechanisms.
HETEROJUNCTION의 最大 太陽에너지 變換效率에 관한 硏究
李明敎 釜山工業大學校 1982 論文集 Vol.23 No.2
A relatively higher generation of carriers in and near the depletion region can be achieved in the case of an abrupt heterojunction than is possible in the case of a homojunction. A theoretical evaluation of the maximum attainable solar conversion efficiencies of p-n and n-p heterodiodes is presented. The calculations are made for some of the theoretically efficient and feasible heterojunctions of Ⅳ and Ⅲ-Ⅴ group semiconductors. The calculated efficiencies are compared wite the reported experimental values and with the conventional ?? photovoltaic cell.
수열합성에 의한 $Pb(Mn_{1/3} Sb_{2/3})_{0.08} Ti_{0.495}Zr_{0.425}O_3$ 계의 분말제조 및 4K_P$ 특성
이명교,홍창희 한국세라믹학회 1986 한국세라믹학회지 Vol.23 No.3
Formation of powders and electromechanical coupling factor of $Pb(Mn_{1/3} Sb_{2/3})_{0.08} Ti_{0.495}Zr_{0.425}O_3$ by hydro-thermal synthesis are described. The hydrothermal reactions each were accomplished at 12$0^{\circ}C$~25$0^{\circ}C$ for 5hours and sintering was accomplished at 1, .20$0^{\circ}C$ for 1hours. The PZT powders by hydrothermal synthesis were formed above 16$0^{\circ}C$ and the forms were cubic types. The ratio of grain size of sintered sample to powder was slowly decreased with the rising of hydrothermal reactino temperature but decreased rapidly above 22$0^{\circ}C$ Sintering density was decreased with the rising of hydrothermal reaction temperature above 16$0^{\circ}C$ but dielectric constant was increased. Electromechanical coupling factor $K_P$ was almost constant at 16$0^{\circ}C$~24$0^{\circ}C$ range and the value of $K_P$ was about 0.43-0.45.
李明敎 釜山工業大學校 1993 論文集 Vol.35 No.-
SOI(Silicon on Insulator)structure is a fundamental technics of three Dimensional Integrated Cir-cuit(3D-IC) to realize high performance and high packing density. SOI structures were realized by Silicon Direct' Bonding method. n-channel Metal Oxide Semiconductor Field Effect Transistor(n-MOSFET) was fabricated to appreciate the silicon film of SOI wafer. And the electrical characteris-tics were measured.