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NiFe / FeMn / NiFe / CoFe / Al₂O₃ / CoFe / NiFe 스핀 터널링 접합의 자기적 특성과 열처리 효과
최연봉(Yeonbong Choi),박승영(Seungyung Park),강재구(Jaegoo Kang),조순철(Soonchul Jo) 한국자기학회 1999 韓國磁氣學會誌 Vol.9 No.6
DC 마그네트론 스퍼터링 방법으로 금속 마스크를 사용하여 십자형태로 substrate/Ta/NiFe/FeMn/NiFe/CoFe/Al₂O₃/CoFe/NiFe와 substrate/Ta/NiFe/CoFe/Al₂O₃/CoFe/NiFe/FeMn/NiFe 스핀 터널링 접합 구조를 제조하였다. 이러한 구조에서 절연층(Al₂O₃)의 형성조건과 각 층의 두께와 파워에 대한 증착율에 변화를 주어 24.3 %의 자기 저항비를 얻었다. 두 종류의 구조에 대한 자기적 특성 비교와 Coming glass 7059와 Si(111) 기판의 종류에 따른 결과를 비교하였으며 소자 제조 때 수반되는 온도변화에 대한 특성변화를 알아보고자 열처리를 하였다. 열처리 결과 자기 저항비는 150 ℃까지는 어느 정도 일정한 값을 유지하다가 180 ℃ 열처리 후 갑자기 감소하는 결과를 얻었다. Cross-shape structures of spin tunneling junctions were fabricated using DC magnetron sputtering and metal masks. The film structures were substrate/Ta/NiFe/FeMn/NiFe/CoFe/Al₂O₃/CoFe/NiFe and substrate/Ta/NiFe/CoFe/Al₂O₃/CoFe/NiFe/FeMn/NiFe. Fabrication conditions of insulating layer (Al₂O₃) and thickness and sputtering power of each film layer were varied, and maximum magnetoresistance ratio of 24.3 % was obtained. Magnetic characteristic variations in the above mentioned two structures and two types of substrates (Coming glass 7059 and Si(111)) were compared. Annealing of the junctions was performed to find out magnetic characteristic variations expected from the device fabrication. Magneoresistance Ratio were observed to maintain as-deposited value up to 150 ℃ annealing and then to drop rapidly after 180 ℃ annealing.
Ta / NiFe / Co / Cu / Co / NiFe / FeMn 스핀밸브구조에서 Ar 압력과 Co 사이층 두께에 따른 GMR 특성 변화
최연봉(Yeonbong Choi),류상현(Sanghyun Ryu),조순철(Soonchul Jo) 한국자기학회 1999 韓國磁氣學會誌 Vol.9 No.2
We have studied changes of coercivity (Hc), exchange anisotropy field (Hex) and MR ratio in glass/Ta/NiFeⅠ/CoⅠ(t)/Cu/CoⅡ(3/4 t)/NiFeⅡ/FeMn spin valve structures by changing Ar pressure and thicknesses of Co layers using DC, RF sputtering methods. We obtained minimum coercivity of 2.8 Oe at 4 mTorr of Ar pressure, exchange anisotropy field of 50.0 Oe at 6 mTorr and 5.3 % of MR ratio at 10 mTorr. Also, we obtained 3.0 Oe of coercivity at 40 Å of CoⅠ layer, 65.9 Oe at 13 Å and 4.7 % of MR ratio at 27 Å and 34 Å by changing the thicknesses of Co layers.
스핀 밸브 Ta 하지층의 질소함유량 변화와 열처리 온도에 따른 자기적 특성
최연봉(Yeonbong Choi),김지원(Jiwon Kim),조순철(Soonchul Jo),이창우(Chang-Woo Lee) 한국자기학회 2005 韓國磁氣學會誌 Vol.15 No.4
In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and N₂ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si(SiO₂)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the N₂ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field (Hex) were decreased when the N₂ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of N₂ gas flow was increased about 0.5 % until the annealing temperature of up to 200℃ and then, decreased. TaN film deposited with 8.0 sccm of N₂ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of N₂ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.
NiFe / FeMn / NiFe / CoFe / Al₂O₃ / CoFe / NiFe 스핀 터널링 접합의 자기적 특성과 열처리 효과
최연봉(Yeonbong Choi),박승영(Seungyung Park),강재구(Jaegoo Kang),조순철(Soonchul Jo) 한국자기학회 1999 韓國磁氣學會誌 Vol.9 No.6
DC 마그네트론 스퍼터링 방법으로 금속 마스크를 사용하여 십자형태로 substrate/Ta/NiFe/FeMn/NiFe/CoFe/Al₂O₃/CoFe/NiFe와 substrate/Ta/NiFe/CoFe/Al₂O₃/CoFe/NiFe/FeMn/NiFe 스핀 터널링 접합 구조를 제조하였다. 이러한 구조에서 절연층(Al₂O₃)의 형성조건과 각 층의 두께와 파워에 대한 증착율에 변화를 주어 24.3 %의 자기 저항비를 얻었다. 두 종류의 구조에 대한 자기적 특성 비교와 Coming glass 7059와 Si(111) 기판의 종류에 따른 결과를 비교하였으며 소자 제조 때 수반되는 온도변화에 대한 특성변화를 알아보고자 열처리를 하였다. 열처리 결과 자기 저항비는 150 ℃까지는 어느 정도 일정한 값을 유지하다가 180 ℃ 열처리 후 갑자기 감소하는 결과를 얻었다. Cross-shape structures of spin tunneling junctions were fabricated using DC magnetron sputtering and metal masks. The film structures were substrate/Ta/NiFe/FeMn/NiFe/CoFe/Al₂O₃/CoFe/NiFe and substrate/Ta/NiFe/CoFe/Al₂O₃/CoFe/NiFe/FeMn/NiFe. Fabrication conditions of insulating layer (Al₂O₃) and thickness and sputtering power of each film layer were varied, and maximum magnetoresistance ratio of 24.3 % was obtained. Magnetic characteristic variations in the above mentioned two structures and two types of substrates (Coming glass 7059 and Si(111)) were compared. Annealing of the junctions was performed to find out magnetic characteristic variations expected from the device fabrication. Magneoresistance Ratio were observed to maintain as-deposited value up to 150 ℃ annealing and then to drop rapidly after 180 ℃ annealing.