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Mossbauer 분광 분석에 의한 Ba₂(Co, Zn)₂Fe₁₂O₂₂ 내의 이온 분포 연구
최상준(S. Choi),권순주(S. J. Kwon) 한국자기학회 1996 韓國磁氣學會誌 Vol.6 No.2
Y-type hexagonal ferrites(Ba₂(Co, Zn)₂Fe₁₂O₂₂ : Me=transition metal) have promising electromagnetic properties in ㎓ range. Co and Zn are good candidates for the transition metal. To understand their role on the properties, it is thus necessary to study the ion(s) distribution in that complex Y-type hexagonal ferrite structure. The authors report Mossbauer spectroscopic results from very reliable samples, which has been extensively characterized by chemical analysis, Rietveld analysis of X-ray diffraction patterns, and magnetic property measurements. Analyzing two samples, Co₂Y and Co_(1.6)Zn_(0.4)Y, conclusions are made as follow : (1) Co ions prefer the tetrahedral interstitial sites in the S-block (6c_Ⅳ) and the octahedral sites (18h_Ⅵ) at the interface of S- and T-block. (2) Partial substitution of Co with Zn (within the experimental range) does not disturb the Fe distribution.
교환 결합 상태가 다른 [Ni80Fe20 / Cu / Co / Cu] 다층 박막에서 Co 계면 삽입이 자기적 특성에 미치는 영향
이정주(J. J. Lee),최상준(J. S. Choi),홍재화(J. H. Hong),권순주(S. J. Kwon) 한국자기학회 1998 韓國磁氣學會誌 Vol.8 No.2
The [Ni_(80)Fe(20)/Cu/Co/Cu] multilayers were grown by evaporation technique, and according to magnetic exchange coupling relation, magnetoresistance ratio and magnetization curve were studied by Co inserting Ni_(80)Fe_(20)/Cu interface. Insertion of Co layer to the antiferromagnetically coupled system, i. e t_(Cu) =25 Å, decrease the MR ratio contrary to previous reports. However the insertion to the ferromagnetically coupled (t_(Cu) = 27 Å) and the non-coupled (t_(Cu)=47 Å) systems increase the ratio to 3.5 % and 6 % respectively. The results imply that the insertion change the magnetic exchange coupling state as well as the spin dependent scattering of conduction electrons. Besides, insertion of Co layer between Cu and Ni_(80)Fe_(20) layer enhances thermal stability to the 300℃, which indicates that insertion of Co has a role of the effective diffusion barrier.
산전초음파로 발견된 양측성 선천성 낭종성 선종양 폐기형 1 례
김용걸(Y . G . Kim),박성훈(S . H . Park),최상준(S . J . Choi),손대언(D . Y . Son),송창훈(C . H . Song),정혁(H . Jung),정유경(Y . G . Jung),임성철(S . C . Lim) 대한산부인과학회 1999 Obstetrics & Gynecology Science Vol.42 No.2
Gmgenital cystic adenomatoid malfmation of the lung(CCAML) is a rare abnormality of embryonic diffaentiation characterized by the replacement of narmal pulmonary tissue with cysts in variable size and number. We experienced a case of bilateral Type III CCAML in neonates of 23 years old pregnant woman, which was detected sonographically at 22weeks of gestation.
XPS와 SEM을 이용한 폴리실리콘 표면에 형성된 잔류막에 대한 연구
김태형(T. H. Kim),이종완(J. W. Lee),최상준(S. J. Choi),이창원(C. W. Lee) 한국진공학회(ASCT) 1998 Applied Science and Convergence Technology Vol.7 No.3
HBr/Cl₂/He-O₂반응 기체를 이용한 반응성 이온 식각후, 폴리실리콘 표면에 형성된 잔류막을 x-선 광전자 분광법(x-ray photoelectron spectroscopy, XFS)과 전자 현미경(scanning electron microscopy, SEM)을 이용하여 관찰하였다. 그 결과 잔류물은 패턴된 폴리실리콘의 맨 윗부분에 잔존하고 있었으며, 화학 결합 상태는 실리콘 산화물임이 밝혀졌다. 잔류물인 실리콘 산화물의 형성 메카니즘을 규명하기 위하여 원래의 혼합 기체 성분중 한가지씩의 반응 기체를 제외시켜 가면서 실험하였다. 비록 플라즈마 성질이 다를지라도, 잔류물은 산소의 존재하에서 잘 형성됨을 알 수 있었는데, 이는 휘발성이 낮은 실리콘-할로겐 화합물이 산소에 의해 산화됨으로써 형성되는 것으로 이해하게 되었다. 또한 반응성 이온 식각후 형성된 잔류층은 소자의 전기적 특성과 후처리 공정에 영향을 미치는 것으로 알려져 있어서, 이를 제거하기 위해 습식과 건식 후처리 공정을 도입하여 비교하였다. 그 결과 건식 공정의 경우 반응 기체에 의해 새로운 잔류물이 형성됨을 XPS를 통하여 관찰하였다. 따라서 잔류물을 제거하고 깨끗한 표면을 얻기 위해서는 습식 공정이 더 적합함을 알았다. The plasma etching of polysilicon was performed with the HBr/Cl₂/He-O₂ gas mixture. The residual layers after photoresist strip were investigated using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The etch residue was identified as silicon oxide deposited on the top of the patterned polysilicon. In order to clarify the formation mechanism of the etch residue, the effects of various gas mixtures such as Cl₂/He-O₂, HBr/He-O₂ and HBr/Cl₂ were investigated. We found that the etch residue is well formed in the presence of oxygen, suggesting that the etch residue is caused by the reaction of oxygen and non-volatile silicon halide compounds. Wet cleaning and dry etch cleaning processes were applied to remove the polysilicon etch residue, which can affect the electrical characteristics and further device processes. XPS results show that the wet cleaning is suitable for the removal of the etch residue.