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MEMS 공정을 이용한 BGA IC 패키지용 테스트 소켓의 제작
김상원(Sangwon Kim),조찬섭(Chanseob Cho),남재우(Jaewoo Nam),김봉환(Bonghwan Kim),이종현(Jonghyun Lee) 大韓電子工學會 2010 電子工學會論文誌-SD (Semiconductor and devices) Vol.47 No.11
본 논문에서는 외팔보 배열 구조를 가지는 MEMS 테스트 소켓을 SOI 웨이퍼를 이용하여 개발하였다. 외팔보는 연결부분의 기계적 취약점을 보완하기 위해 모서리가 둥근 형태를 가지고 있다. 측정에 사용 된 BGA IC 패키지는 볼 수 121개, 피치가 650 ㎛, 볼 직경 300 ㎛, 높이 200 ㎛ 을 가지고 있다. 제작된 외팔보는 길이 350 ㎛, 최대 폭 200 ㎛, 최소 폭 100 ㎛, 두께가 10 ㎛인 곡선 형태의 외팔보이다. MEMS 테스트 소켓은 lift-off 기술과 Deep RIE 기술 등의 미세전기기계시스템(MEMS) 기술로 제작되었다. MEMS 테스트 소켓은 간단한 구조와 낮은 제작비, 미세 피치, 높은 핀 수와 빠른 프로토타입을 제작할 수 있다는 장점이 있다. MEMS 테스트의 특성을 평가하기 위해 deflection에 따른 접촉힘과 금속과 팁 사이의 저항과 접촉저항을 측정하였다. 제작된 외팔보는 90 ㎛ deflection에 1.3 gf의 접촉힘을 나타내었다. 신호경로저항은 17 Ω 이하였고 접촉저항은 평균 0.73 Ω 정도였다. 제작된 테스트 소켓은 향 후 BGA IC 패키지 테스트에 적용 가능 할 것이다. We developed a novel micro-electro mechanical systems (MEMS) test socket using silicon on insulator (SOI) substrate with the cantilever array structure. We designed the round shaped cantilevers with the maximum length of 350 ㎛,the maximum width of 200 ㎛ and the thickness of 10 ㎛ for 650 ㎛ pitch for 8 ㎜ x 8 ㎜ area and 121 balls square ball grid array (BGA) packages. The MEMS test socket was fabricated by MEMS technology using metal lift off process and deep reactive ion etching (DRIE) silicon etcher and so on. The MEMS test socket has a simple structure, low production cost, fine pitch, high pin count and rapid prototyping. We verified the performances of the MEMS test sockets such as deflection as a function of the applied force, path resistance between the cantilever and the metal pad and the contact resistance. Fabricated cantilever has 1.3 gf (gram force) at 90 μm deflection. Total path resistance was less than 17 Ω. The contact resistance was approximately from 0.7 to 0.75 Ω for all cantilevers. Therefore the test socket is suitable for BGA integrated circuit (IC) packages tests.
RIE 공정으로 제조된 블랙 실리콘(Black Silicon) 층을 사용한 표면 증강 라만 산란 기판 제작
김형주 ( Hyeong Ju Kim ),김봉환 ( Bonghwan Kim ),이동인 ( Dongin Lee ),이봉희 ( Bong-hee Lee ),조찬섭 ( Chanseob Cho ) 한국센서학회 2021 센서학회지 Vol.30 No.4
In this study, Ag was deposited to investigate its applicability as a surface-enhanced Raman scattering substrate after forming a grasstype black silicon structure through maskless reactive ion etching. Grass-structured black silicon with heights of 2 - 7 μm was formed at radio-frequency (RF) power of 150 - 170W. The process pressure was 250mTorr, the O<sub>2</sub>/SF<sub>6</sub> gas ratio was 15/37.5, and the processing time was 10 - 20 min. When the processing time was increased by more than 20 min, the self-masking of Si<sub>x</sub>O<sub>y</sub>F<sub>z</sub> did not occur, and the black silicon structure was therefore not formed. Raman response characteristics were measured based on the Ag thickness deposited on a black silicon substrate. As the Ag thickness increased, the characteristic peak intensity increased. When the Ag thickness deposited on the black silicon substrate increased from 40 to 80 nm, the Raman response intensity at a Raman wavelength of 1507 / cm increased from 8.2 × 10<sup>3</sup> to 25 × 10<sup>3</sup> cps. When the Ag thickness was 150 nm, the increase declined to 30 × 10<sup>3</sup> cps and showed a saturation tendency. When the RF power increased from 150 to 170 W, the response intensity at a 1507/cm Raman wavelength slightly increased from 30 × 10<sup>3</sup> to 33 × 10<sup>3</sup> cps. However, when the RF power was 200 W, the Raman response intensity decreased significantly to 6.2 × 10<sup>3</sup> cps.
표면 요철구조를 적용한 나노 다공성 Ag 금속박막의 SERS 응답 특성 개선
김형주 ( Hyeong Ju Kim ),김봉환 ( Bonghwan Kim ),이동인 ( Dongin Lee ),이봉희 ( Bong-hee Lee ),조찬섭 ( Chanseob Cho ) 한국센서학회 2020 센서학회지 Vol.29 No.4
In this study, we developed a method of improving the surface-enhanced Raman spectroscopy (SERS) response characteristics by depositing a nanoporous Ag metal thin film through cluster source sputtering after forming a pyramidal texture structure on the Si substrate surface. A reactive ion etching (RIE) system with a metal mesh inside the system was used to form a pyramidal texture structure on the Si surface without following a complicated photolithography process, unlike in case of the conventional RIE system. The size of the texture structure increased with the RIE process time. However, after a process time of 60 min, the size of the structure did not increase but tended to saturate. When the RF power increased from 200 to 250 W, the size of the pyramidal texture structure increased from 0.45 to 0.8 μm. The SERS response characteristics were measured by depositing approximately 1.5 μm of nanoporous Ag metal thin film through cluster sputtering on the formed texture structure by varying the RIE process conditions. The Raman signal strength of the nanoporous Ag metal thin film deposited on the Si substrate with the texture structure was higher than that deposited on the general silicon substrate by up to 19%. The Raman response characteristics were influenced by the pyramid size and the number of pyramids per unit area but appeared to be influenced more by the number of pyramids per unit area. Therefore, further studies are required in this regard.