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PZT(80/20)/BFO 이종층 박막의 코팅횟수에 따른 전기적 특성
조서현(Seo-Hyeon Jo),김대영(Dae-Young Kim),이태호(Tae-Ho Lee),남성필(Sung-Pill Nam),이성갑(Sung-Gap Lee),이영희(Young-Hi Lee) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.11
In this study, PZT(80/20)/BFO heterolayered thin film were fabricated by sol- gel method. which were spin-coated onto the Pt/Ti/SiO₂/Si substrate alternately using PZT(80/20) and BFO metal alkoxide solutions. With increasing the number of layer, the dielectric properties of thin films were improved. The relative dielectric constant and the dielectric loss of the 6-layer thin film were about 482 and 0.033%, respectively.
적외선 센서로의 응용을 위한 반도성 YBa₂Cu₂O<SUB>7-x</SUB> 박막의 제작 및 전기적 특성
정재운(Jae-Woon Jeong),조서현(Seo-Hyeon Jo),이성갑(Sung-Gap Lee) 대한전기학회 2012 전기학회논문지 Vol.61 No.9
YBa₂Cu₂O7-x thin films were fabricated by the spin-coating method on SiO₂/Si substrate using an alkoxide-based sol-gel method. The structural and electrical properties were investigated for various 1st annealing temperature. Due to the formation of the polycrystalline single phase, synthesis temperature was observed at around 720℃ - 800℃. YBa₂Cu₂O7-x thin films with the 1st annealing temperature of 450oC~500oC showed the single XRD patterns without the second phase, such as YBa₂Cu₄O8. The thickness of films was approximately 0.23 ㎛~0.27 ㎛. Aerage grain size, resistance and temperature coefficient of resistance (TCR) of YBa₂Cu₂O7-x thin films with the 1st annealing temperature of 500℃ were 0.27 ㎛, 59.7㏁ and ?3.7 %/K, respecvitely.
BiTiO<sub>3</sub> 첨가에 따른 (Na<sub>0.5</sub>K<sub>0.5</sub>)NbO<sub>3</sub> 세라믹스의 구조적, 전기적 특성
이태호(Tae Ho Lee),김대영(Dae Young Kim),조서현(Seo Hyeon Jo),정광호(Gwang-Ho Jeong),이성갑(Sung-Gap Lee) 대한전기학회 2011 전기학회논문지 Vol.60 No.11
In this study, lead-free (Na<sub>0.5</sub>K<sub>0.5</sub>)NbO<sub>3</sub>-BiTiO<sub>3</sub> ceramics were fabricated by a conventional mixed oxide method. Structural and electrical properties of lead-free (Na<sub>0.5</sub>K<sub>0.5</sub>)NbO<sub>3</sub> ceramics with the variation of BiTiO<sub>3</sub> were investigated. The results of X-ray diffraction analysis showed a typical polycrystalline perovskite structure without presence of the second phase in all specimens. Sintered density increased with an increasing of BTO and the specimen added with 0.07 mol% of BiTiO<sub>3</sub>showed the maximum value of 97.8%. Average grain size decreased and densification increased with an increasing of BiTiO<sub>3</sub> contents. The electromechanical coupling factor of the 0.01 mol% BiTiO<sub>3</sub> doped NKN specimens was 0.32. Dielectric constant, dielectric loss and Curie temperature of the 0.07 mol% BiTiO<sub>3</sub> doped NKN specimens were 1185, 0.145% and 400℃, respectively.