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Schottky Body Diode를 집적하여 향상된 Reverse Recovery 특성을 가지는 50V Power MOSFET
이병화,조두형,김광수,Lee, Byung-Hwa,Cho, Doo-Hyung,Kim, Kwang-Soo 한국전기전자학회 2015 전기전자학회논문지 Vol.19 No.1
본 논문에서는 U-MOSFET 내부의 기생 body 다이오드(PN diode)를 쇼트키 body 다이오드(Schottky body diode)로 대체한 50V급 전력 U-MOSFET을 제안하였다. 쇼트키 다이오드는 PN 다이오드와 비교 시, 역 회복 손실(reverse recovery loss)을 감소시킬 수 있는 장점을 가지고 있다. 따라서 전력 MOSFET의 기생 body 다이오드를 쇼트키 body 다이오드를 대신함으로써 역 회복 손실을 최소화 할 수 있다. 제안된 쇼트키 body 다이오드(Schottky body diode) U-MOSFET(SU-MOS)를 conventional U-MOSFET(CU-MOS)와 전기적 특성을 비교한 결과, 전달(transfer) 및 출력(output)특성, 항복(breakdown)전압 등 정적(static) 특성의 변화 없이 감소된 역 회복 손실을 얻을 수 있었다. 즉, 쇼트키 다이오드의 폭(width)이 $0.2{\mu}m$, 쇼트키 장벽 높이(Schottky barrier height)가 0.8eV일 때 첨두 역전류(peak reverse current)는 21.09%, 역 회복 시간(reverse recovery time)은 7.68% 감소하였고, 성능지수(figure of merit(FOM))는 35% 향상되었다. 제안된 소자의 특성은 Synopsys사의 Sentaurus TCAD를 사용하여 분석되었다. In this paper, 50V power U-MOSFET which replace the body(PN) diode with Schottky is proposed. As already known, Schottky diode has the advantage of reduced reverse recovery loss than PN diode. Thus, the power MOSFET with integrated Schottky integrated can minimize the reverse recovery loss. The proposed Schottky body diode U-MOSFET(SU-MOS) shows reduction of reverse recovery loss with the same transfer, output characteristic and breakdown voltage. As a result, 21.09% reduction in peak reverse current, 7.68% reduction in reverse recovery time and 35% improvement in figure of merit(FOM) are observed when the Schottky width is $0.2{\mu}m$ and the Schottky barrier height is 0.8eV compared to conventional U-MOSFET(CU-MOS). The device characteristics are analyzed through the Synopsys Sentaurus TCAD tool.
4H-SiC 소자의 JTE 구조 및 설계 조건 변화에 따른 항복전압 분석
구윤모,조두형,김광수,Koo, Yoon-Mo,Cho, Doo-Hyung,Kim, Kwang-Soo 한국전기전자학회 2015 전기전자학회논문지 Vol.19 No.4
Silicon Carbide(SiC) has large advantage in high temperature and high voltage applications because of its high thermal conductivity and large band gap energy. When using SiC to design power semiconductor devices, edge termination techniques have to be adjusted for its maximum breakdown voltage characteristics. Many edge termination techniques have been proposed, and the most appropriate technique for SiC device is Junction Termination Extension(JTE). In this paper, the change of breakdown voltage efficiency ratio according to the change of doping concentration and passivation oxide charge of each JTE techniques is demonstrated. As a result, the maximum breakdown voltage ratio of Single Zone JTE(SZ-JTE), Double Zone JTE(DZ-JTE), Multiple Floating Zone JTE(MFZ-JTE), and Space Modulated JTE(SM-JTE) is 98.24%, 99.02%, 98.98%, 99.22% each. MFZ-JTE has the smallest and SZ-JTE has the largest sensitivity of breakdown voltage ratios according to the change of JTE doping concentration. Additionally the degradation of breakdown voltage due to the passivation oxide charge is analyzed, and the sensitivity is largest in SZ-JTE and smallest in MFZ-JTE, too. In this paper, DZ-JTE and SM-JTE is the best efficiency JTE techniques than MFZ-JTE which needs large doping concentration in short JTE width. Silicon Carbide(SiC)는 높은 열전도도와 넓은 밴드갭 에너지로 인해 고온과 고전압 소자로 사용하는데 큰 장점을 가지고 있는 물질이다. SiC를 이용하여 전력반도체소자를 제작할 경우, 소자가 목표 전압을 충분히 견딜 수 있도록 Edge Termination 기법을 적용하여야한다. Edge Termination 기법에는 여러 가지 방안이 제안되어왔는데, SiC 소자에 가장 적합한 기법은 Junction Termination Extension (JTE)이다. 본 논문에서는 각 JTE 구조별 도핑 농도와 Passivation Oxide Charge 변화에 따른 항복전압의 변화를 살펴보았다. 결과적으로 Single Zone JTE (SZ-JTE)는 1D 시뮬레이션 값의 98.24%, Double Zone JTE (DZ-JTE)는 99.02%, Multiple-Floating-Zone JTE (MFZ-JTE)는 98.98%, Space-Modulated JTE (SM-JTE)는 99.22%의 최대 항복전압을 나타내었고, JTE 도핑 농도 변화에 따른 최대 항복전압의 민감도는 MFZ-JTE가 가장 낮은 반면 SZ-JTE가 가장 높았다. 또한 Passivation Oxide 층의 전하로 인해 소자의 항복전압의 변화를 살펴보았는데, 이에 대한 민감도 역시 MFZ-JTE가 가장 낮았으며 SZ-JTE가 가장 높았다. 결과적으로 본 논문에서는, 짧은 JTE 길이에서 높은 도핑 농도를 필요로 하는 MFZ-JTE보다 DZ-JTE와 SM-JTE가 실제 소자 설계에 있어 가장 효과적인 JTE 기법으로 분석되었다.
0V 턴 오프 MOS Controlled Thyristor 소자 구조 설계 및 전압전류특성 시뮬레이션
권성규(Sung-Kyu Kwon),조두형(Doo-Hyung Cho),원종일(Jong-Il Won),장현규(Hyun-Gyu Jang),정동윤(Dong-Yun Jung),박건식(Kun-Sik Park) 대한전자공학회 2020 대한전자공학회 학술대회 Vol.2020 No.11
Current driving capability is one of the important specifications in MCT (MOS Controlled Thyristor) which is determined by turn-off characteristics. Meanwhile, high peak anode current and di/dt are related to the turn-on characteristics. Thus, both on-FET and off-FET performance need to be improved. In this paper, the structure of MCT with the off-FET which is turned on at the gate voltage of 0V by forming a “depletion mode off-FET channel region” in a part of the off-FET channel region of the unit cell of an MCT device is presented. The MCT is turned on at an arbitrary gate voltage and turned off at a gate voltage of 0V with adjusting the ion implantation condition. This demonstrates that the turn-on and turn-off characteristics of the MCT are enhanced and can be simplify the gate driving circuit.
낮은 트리거 전압 기술을 이용한 MOSFET 기반 ESD 보호회로의 특성 비교에 관한 연구
정진우(Jin-Woo Jung),김상기(Sang-Gi Kim),구진근(Jin-Gun Koo),노태문,박건식(Kun-Sik Park),원종일(Jong-Il Won),조두형(Doo-Hyung Cho),유성욱(Sung-Wook Yoo),구용서(Yong-Seo Koo),박종문(Jong-Moon Park) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.11
Electrostatic discharge (ESD) damage has become the main reliability issue for deep-submicron CMOS integrated circuit. This paper presents comparisons of ESD protection circuits using low trigger techniques in a 0.13 um CMOS process, Transmission line pulse (TLP) and human body model (HBM) results support the findings presented in this paper.
결과의 지식 부여형태가 시각장애인의 이동거리 정확도에 미치는 영향
최승권,조두형 龍仁大學校 2001 용인대학교 논문집 Vol.19 No.-
The purpose of this study is to investigate the effects of processing of 'Knowledge of Result'(KR) on the precision of people with visual impairments and the effects of different types of KR-tactile-KR, quantitative-KR, and qualitative-KR, which are designed to help them acquire adequate motor skills, by providing them with feedback on target distance for moving. The study is based upon the hypothesis that problems of visually impaired people in motor skills developed by motor learning are caused by their failure to store accurate information due to the injuries in the sensory organs, which in turn can cause problems in mobility that is preliminary level of motor activities by affecting other organs related to them. The study, conducted in May, 2001, included 60 students with visual impairments attending S and H School for the blind in Seoul. The subjects were divided into 4 groups according to the types of treatment applied: no-KR, tactile-KR, qualitative-KR, and quantitative-KR. The precision of moving distance was measured by absolute error based on the degree of deviance from the target point after a five-meter movement. The results were analyzed by 'Two-way Repeated-measures ANOVA' in order to calculate the variations in absolute error between pre-treatments and post-treatments of KR and by 'Analysis of Covariance' with pre-treatment scores as covariable in order to compare the variations among the different types of KR- tactile-KR, qualitative-KR, and quantitative-KR. The findings of the study are as follows : First, with regard to the effects of the processing of KR on the precision of moving distance, no statistically significant differences between no-KR(pre-treatment) and qualitative-KR(post-treatment) were found. But there were some improvements in tactile-KR and quantitative-KR. Second, in relation to the effects of different types of KR-tactile-KR, qualitative-KR, quantitative-KR- on the precision of moving distance, there were no significant differences between tactile-KR and verbal-KR. And even within verbal-KR, no differences between qualitative-KR and quantitative-KR were found. In summary, the processing of KR was found to be effective for improving the precision of moving distance of people with visual impairments, and the accuracy of information provided as well as its quality should also be taken into consideration.