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단기문제해결과제 프로그램이 일반 아동의 창의성에 미치는 영향
정병직,유영길 한국실과교육학회 2011 한국실과교육학회지 Vol.24 No.3
The purpose of this study is to know how short term problem solving subject program applied to invention gifted class affect to student of general class for the creativity and leadership improvement To achieve the research purpose, two classes from elementary school in the area of Wonju city were selected and were compared the result of the area of the creativity and the leadership characteristics after applying the short term problem solving subject program and regular program, respectively. The result is as follows;First of all, short term problem solving subject program such as personal, partner and group project was developed by teachers who work for invention gifted class. These project were presented for evaluating the problem solving ability, creativity and cooperation ability with having the time limit for 15 minute. Secondly, result for self examination of the gifted test between experiment group and comparative group is significant. However, result for creative characteristics is not significant although average of experiment group higher than comparative group. The program for invention gifted class is ineffective for regular class student. Finally, result for leadership characteristics is not significant although average of experiment group higher than comparative group. The program for invention gifted class is not affected to regular class student. From the result, important thing is that the program for invention gifted class is significantly ineffective to regular class student. When the short term problem solving subject program applied to invention gifted class is to apply to student of general class, it focused on the experience purpose of student other than the effect. Therefore, the study will be carried out for the efficient conduct of developing the creativity program for level of the regular class student instead of directly using the gifted class program. 본 연구는 발명영재반에서 적용되는 단기문제해결과제 프로그램 수업이 초등학교 일반 아동의 창의성과 리더십향상에 어떤 영향을 미치는지를 알아보는 데 목적이 있다. 연구의 목적을 성취하기 위해 강원도 원주시 M초등학교 6학년 2개 학급을 선정하여 실험반은 24차시 단기문제해결과제 프로그램 수업을 비교반은 일반 재량수업을 실시하였고, 그 후에 각 집단의 창의성 영역과 리더십 행동특성에 대하여 어떤 변화가 있는지 비교․분석하였다. 연구결과는 다음과 같다. 첫째, 단기문제해결과제 프로그램은 발명영재담당 교사들과 함께 개별과제, 짝 과제, 모둠과제를 개발하였다. 문제해결능력, 창의성, 협동성을 평가하기 위한 과제로 15분 이내에서 해결할 수 있는 것으로 제시하였다. 둘째, 자신에 대한 영재성 검사를 한 결과 두 집단 간의 차이가 유의미하게 나타났다. 창의성 행동특성에서는 실험반의 평균값이 비교반보다 높았지만 유의미한 차이는 없었다. 이는 발명영재반에 적용되는 프로그램이 일반 아동의 창의성에는 영향을 주지 못한다는 것이다. 셋째, 리더십 행동특성은 실험반의 평균값이 비교반보다 높으나 유의미한 차이는 없었다. 이는 학교의 일반 학생을 대상으로 영재학생들에게 적용되는 프로그램을 적용하여도 리더십에 관련된 특별한 영향을 학생들에게 주지 못하는 것을 알 수 있다. 영재반에 적용되는 단기문제해결과제 프로그램 수업이 초등학교 일반 아동에게 적용할 때는 효과적인 측면보다는 학생의 체험적 측면에 관심을 두어야 할 것이다. 따라서 일반 아동 수준에 맞는 창의성 프로그램의 개발에 대한 연구가 이루어져야 할 것이다.
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MOD법에 의한 강유전성 $Sr_xBi_yTa_2O_{9+\alpha}$(SBT) 박막의 제조 및 후열처리 효과에 관한 연구
정병직,신동석,윤희성,김병호 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.3
Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.
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최무용,송석표,정병직,김병호 한국전기전자재료학회 1999 전기전자재료학회논문지 Vol.12 No.1
Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.
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$IrO_2$를 하부전극으로 사용한 $Sr_{0.9}Bi_{2+x}Ta_2O_9$ 박막의 유전 및 전기적 특성
박보민,송석표,정병직,김병호 한국세라믹학회 2000 한국세라믹학회지 Vol.37 No.3
Sr0.9Bi2+xTa2O9(x=0, 0.1, 0.2, 0.3) thin films on IrO2/SiO2/Si or Pt/Ti/SiO2/Si substrate were prepared by spin coating method using SBT stock solutions synthesized by MOD process. SBT thin films on IrO2 transformed to layered perovskite phase at $700^{\circ}C$, but showed low breakdown voltage due to their porous microstructure. The smaple of Sr0.9Bi2+xTa2O9 composition showed the best dielectric and electrical properties. When the sample of the same composition was annealed at 80$0^{\circ}C$, the dielectric and electric properties were improved due to the grian growth and dense surface. the remanent polarization values(2Pr) at $\pm$3 V for IrO2 and Pt electrodes were 10.5, 7.15$\mu$C/$\textrm{cm}^2$, respectively. The SBT thin film with IrO2 electrode showed the lower coercive field. The leakage current density and breakdown voltage of SBT thin films on IrO2 were higher than those on Pt.
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