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Diethylnitrosamine 과 Diethanolnitrosamine 이 흰쥐 혈청의 탈수소 효소활성에 미치는 영향
장성근,이동욱,박기현 ( Sung Keun Chang,Dong Wook Lee,Ki Hyun Park ) 생화학분자생물학회 1991 BMB Reports Vol.24 No.6
Lactate dehydrogenase(LDH) and its isozyme patterns were investigated in the serum of the rats treated with diethylnitrosamine(DENA) or diethanolnitrosamine(DELNA). LDH activity was remarkably increased by the treatment of these chemicals, but that was gradually decreased from about 2 weeks after administration of the chemicals. Especially the relative activity of LDH isozyme 1 was increased remarkably, whereas that of isozyme. 5 was slightly decreased from the 5th days. However, the activity ratios of the isozymes were not changed significantly with time course. This unique alterations in serum LDH activity might be provide a useful information for the detection of tissue toxicity induced by these chemicals.
Eu와 V 동시 도핑에 의한 BiFeO<sub>3</sub> 박막의 구조와 전기적 특성
장성근,김윤장,Chang, Sung-Keun,Kim, Youn-Jang 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.3
Pure $BiFeO_3$ (BFO) and (Eu, V) co-doped $Bi_{0.9}Eu_{0.1}Fe_{0.975}V_{0.025}O_{3+{\delta}}$ (BEFVO) thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization ($2P_r$) of the BEFVO thin film was approximately $26{\mu}C/cm^2$ at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film ($4.81{\times}10^{-5}A/cm^2$ at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film.
EEPROM 셀에서 폴리실리콘 플로팅 게이트의 도핑 농도가 프로그래밍 문턱전압에 미치는 영향
장성근,김윤장,Chang, Sung-Keun,Kim, Youn-Jang 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.2
We have investigated the effects of doping concentration in polysilicon floating gate on the endurance characteristics of the EEPROM cell haying the structure of spacer select transistor. Several samples were prepared with different implantation conditions of phosphorus for the floating gate. Results show the dependence of doping concentration in polysilicon floating gate on performance of EEPROM cell from the floating gate engineering point of view. All of the samples were endured up to half million programming/erasing cycle. However, the best $program-{\Delta}V_{T}$ characteristic was obtained in the cell doped at the dose of $1{\times}10^{15}/cm^{2}$.
한국산 해양 의충동물 개불에서 Anthraquinone 및 Sterol 성분연구
장성근,박영현,채석,김인규,서영완,조기웅,신종헌,Chang, Sung-keun,Park, Yong-Hyun,Chai, Seuk,Kim, In-Kyu,Seo, Young-Wan,Cho, Ki-woong,Shin, Jong-Heon 대한화학회 1998 대한화학회지 Vol.42 No.1
한국 연해에 서식하고 있는 의충동물 개불(Urechis unicintus)로 부터 강심작용과 관련된 $Na^+,K^+-ATPase$ 저해 작용 및 cyclic AMP phosphodiesterase 저해 작용이 높은 anthraquinones화합물인 chrysophanol, physcion 및 1-o-methyl-2methoxychrysophanol을 분리하였다.주로 HMQC, HMBC 및 NOE 등의 분광학적 방법으로 이들의 구조를 밝혔다. Three anthraquinones, chrysophanol, physcion and 1-o-methyl-2-methoxychrysophanol which have $Na^+,K^+-ATPase$ and cyclic AMP phosphodiesterase lowering activities related to cardiotonic action were isolated from the Korean marine echiura, Urechis unicintus. Spectroscopic methods, including HMQC, HMBC and NOE studies, were used to establish the structures.
Effect of Diethylnitrosamine and Diethanolnitrosamine on Serum Lactate Dehydrogenase in Rats
장성근,이동욱,박기현,Chang, Sung-Keun,Lee, Dong-Wook,Park, Ki-Hyon 생화학분자생물학회 1991 한국생화학회지 Vol.24 No.6
Diethylnitrosamine(DENA)과 Diethanolnitrosamine(DELNA)을 흰쥐에 투여하고 혈청에서 젖산 탈수소효소(LDH)의 활성도와 동위효소의 pattern을 관찰하였다. 이들의 투여로 인해 LDH의 총활성도는 크게 증가하되 약 2주일 후부터는 점차 감소되었다. 전기영동법에 의해 동위효소의 pattern을 측정한 결과 전형적인 5종의 isozyme만 확인되었고, 특히 LDH1의 상대적인 활성도는 정상쥐에 비해 크게 증가된 반면 LDH5는 오히려 다소 감소되었다. 그러나 이들 두 isozyme의 상대적인 활성도의 비는 크게 변화되지 않았다. 이와 같은 LDH isozyme 의 특이한 활성도의 변화는 nitrosamine화합물들에 의해 유발되는 생체손상의 한 특정인 것 같다. Lactate dehydrogenase(LDH) and its isozyme patterns were investigated in the serum of the rats treated with diethylnitrosamine(DENA) or diethanolnitrosamine(DELNA). LDH activity was remarkably increased by the treatment of these chemicals, but that was gradually decreased from about 2 weeks after administration of the chemicals. Especially the relative activity of LDH isozyme 1 was increased remarkably, whereas that of isozyme. 5 was slightly decreased from the 5th days. However, the activity ratios of the isozymes were not changed significantly with time course. This unique alterations in serum LDH activity might be provide a useful information for the detection of tissue toxicity induced by these chemicals.
장성근,김윤장,Chang, Sung-Keun,Kim, Youn-Jang 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.10
We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.
NO기반 게이트절연막 NMOS의 AC Hot Carrier 특성
장성근,김윤장,Chang, Sung-Keun,Kim, Youn-Jang 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.6
We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.
평면구조 P-MOS DRAM 셀의 커패시터 V<sub>T</sub> 이온주입의 최적화
장성근,김윤장,Chang Sung-Keun,Kim Youn-Jang 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.2
We investigated an optimized condition of the capacitor threshold voltage implantation(capacitor $V_T$ Implant) in planar P-MOS DRAM Cell. Several samples with different condition of the capacitor $V_T$ Implant were prepared. It appeared that for the capacitor $V_T$ Implant of $BF_2\;2.0{\times}l0^{13}\;cm^{-2}$ 15 KeV, refresh time is three times larger than that of the sample, in which capacitor $V_T$ Implant is in $BF_2\;1.0{\times}l0^{13}\;cm^{-2}$ 15 KeV. Raphael simulation revealed that the lowed maximum electric field and lowed minimum depletion capacitance ($C_{MIN}$) under the capacitor resulted in well refresh characteristics.
안티퓨즈 MOS capacitor를 이용한 OTP 소자의 프로그래밍 후의 저항특성
장성근(Chang, Sung-Keun),김윤장(Kim, Youn-Jang) 한국산학기술학회 2012 한국산학기술학회논문지 Vol.13 No.6
안티퓨즈 MOS 커패시터를 기반으로 제작된 OTP 소자의 수율은 프로그램 과정에서 입력 저항(Rin)값과 통 과 트랜지스터(Pass Tr)의 크기, 데이터 읽기 과정에서 읽기 트랜지스터(Read Tr)와 읽기 전압에 영향을 받는다. 따라 서 수율에 영향을 주는 요소를 분석하기 위해 여러 가지 실험 조건을 달리하여 각각의 조건에 대해 블로잉 후 실효 소자의 저항 특성에 대한 풀 맵(full map) 데이터를 얻어 OTP 소자가 어떻게 동작하는지를 분석하여 수율 개선에 필 요한 최적 조건을 연구하였다. 최적 조건은 입력저항이 50Ω, 통과 트랜지스터의 W값이 10㎛, 읽기 전압이 2.8 V 일 때이다. The yield of OTP devices using anti-fuse MOS capacitor have been affected by the input resistance, the size of the pass transistor and the read transistor, and the readout voltage of programed cell. To investigate the element which gives an effect to yield, we analyze the full map data of the resistance characterization of OTP device and those data in a various experimental condition. As a result, we got the optimum conditions which is necessary to the yield improvement. The optimum conditions are as follows: Input resistance is 50 ohms, the channel length of pass transistor is 10um, read voltage is 2.8 volt, respectively.