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20-30대 여성의 유행선도력에 따른 디자이너 구두 브랜드의 구매 선택기준과 만족도에 관한 연구
장미순 ( Mi Soon Chang ) 한국패션비즈니스학회 2011 패션 비즈니스 Vol.15 No.2
The study examines the current state of designer shoe brands, which are gaining a great deal of popularity in the footwear market, and offer bold designs that cannot be found in typical ready-made shoes. Women in their 20`s and 30`s who are sensitive to fashion are classified into sub-groups based on fashion leadership, and comparative analyses conducted among the sub-groups on selection criteria of designer shoe brands, intention of purchase and satisfaction according to fashion leadership. To this end, a questionnaire survey was conducted of women residing in Seoul and the Capital Area, and 371 questionnaires were used for final data analyses. As a result of the study, the following conclusions were reached. For satisfaction with the purchase of designer shoe brands according to fashion leadership among sub-groups, it was found that the satisfaction with the purchase of designer shoe brands is higher among fashion laggards than among fashion leaders, dual fashion leaders and fashion followers. Dual fashion leaders and fashion leaders showed the highest purchase satisfaction in terms of color, size, material and durability.
Electromigration 고장에 의한 의 OP-Amp IC 수명예측
김령(Jin Ling),장미순(Mi-Soon Chang),김재중(Jae-Jung Kim),곽계달(Kae-Dal Kwack) 대한기계학회 2009 대한기계학회 춘추학술대회 Vol.2009 No.11
The electromigration formation which is one of a critical failure mechanism in microelectronic devices. Minimizing the thin film interconnections make high current densities at electrical metal pattern. If an electrical current flows through a thin metal pattern, electromigration problems are occurred. The current density over 1×10? A/㎠ on a constant d.c. power when current flow in aluminum metal make electromigration. The electromigration due to Joule heating under high current density and high temperature conditions can be confirmed by resistance increase. The electromigration makes electronic open by induced void at anode and short state by induced hillock at cathode. Finally, we estimated the relation of life-stress and acceleration factor with ALTA data.
단결정 실리콘 Photovoltaic(PV) Module의 수명 예측
김용훈(Yong-Hoon Kim),장미순(Mi-Soon Chang),김재중(Jea-Jung Kim),곽계달(Kae-Dal Kwack) 대한기계학회 2009 대한기계학회 춘추학술대회 Vol.2009 No.11
This paper presents a lifetime estimation of Photovoltaic(PV) module. There are many failure modes and factors which caused failure of PV module. We reveal these using Failure Analysis, and express these by using Failure Tree Analysis(FTA). The dominant failure mode of the PV module is decreasing open-circuit voltage and short-circuit current that was made by corrosion at interconnector/metallization. Humidity and temperature are selected as stress factors by using of two-stage Quality Function Deployment(QFD). Because PV module are using for both indoor and outdoor, humidity and temperature are inevitable effects on its reliability. We estimate lifetime to use damp-heat test on PV module. And then we estimate the shape parameter, life-stress relationship and B₁? life by using ALTA programs.
Au wire와 Al pad사이의 IMC(Intermetallic Compound) 형성에 의한 수명예측
손정민(Jung-Min Son),장미순(Mi-Soon Chang),곽계달(Kae-Dal Kwack) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.11
During the manufacturing and the service life of Au?Al wire bonded electronic packages, the ball bonds experience elevated temperatures and hence accelerated thermal diffusion reactions that promote the transformation of the Au?Al phases and the IMC growth. In this paper, the IC under high temperature storage (HTS) tests at 175℃, 200℃, and 250℃ are meticulously investigated. Thermal exposure resulted in the IMC growth, Kirkendall void and the crack of the Au?Al phases. The crack propagation occurs resulting in the failure of the Au?Al ball bonds. As the IC was exposed at the high temperature, decreased in the lifetime.
Micom IC의 ESD 고장에 의한 전압 shift 한계치 제안
조병준(Byung-Jun Jo),장미순(Mi-Soon Chang),곽계달(Kae-Dal Kwack) 대한기계학회 2009 대한기계학회 춘추학술대회 Vol.2009 No.11
Electrostatic Discharge (ESD) has become one of the most critical reliability issues in integrated circuits. This problem becomes even more crucial when it comes to integrated circuit which deal with high voltage. There is two case of malfunction, one of which is catastrophic failure and the other is latent failure. There are many aspects of ESD failure such as oxide rupture, junction spiking, burn out and filamentation. There are two stress factor about ESD failure which are voltage and current. The form of ESD failure is different from what makes it breakdown. ESD protection circuit is designed to protect from ESD. Diode protection method and using MOS transistor are widely used. This experiment is proceding by MM mode. This study suggests that the limitation of voltage shift on ESD failure, so it is easier to analysis the electrical failure on IC than before.
Electromigration 고장에 의한 Amplifier IC의 수명 예측
이호영(Ho-Young Lee),장미순(Mi-Soon Chang),곽계달(Kae-Dal Kwack) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.11
Electromigration is a one of a critical failure mechanism in microelectronic devices. Minimizing the thin film interconnections in microelectronic devices make high current densities at electrrical line. Under high current densities, an electromigration becomes critical problems in a microelectronic device. This phenomena under DC conditions was investigated with high temperature. The current density of 1.5MA/cm2 was stressed in interconnections under DC condition, and temperature condition 150℃, 175℃, 200℃. By increasing of thin film interconections, microelectronic devices durability is decreased and it gets more restriction by temperature. Electromigration makes electronic open by void induced, and hillock induced makes electronic short state.
Plating 및 Base metal의 Grain size에 따른 Whisker 성장 영향 분석
김수진(Su-Jin Kim),장미순(Mi-Soon Chang),곽계달(Kae-Dal Kwack) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.11
The whisker grows at the plating of a lead frame so that it causes the serious problem like the short. To prove this case, many people have studied the cause and influence of the tin whisker growth. This study explains the grain size affects the growth of the whisker in the lead frame. By these studies about the whisker, the whisker growth is discovered by stresses generated by the intermetallic compound and CTE mismatch in both plating and base metal. The stresses or lattice defect generated in the plating process changes grain structure of plating. Consequently, these various stresses are stabilized by forming unspecified whiskers through lots of grain boundaries. Because the grain boundary is the path of the whisker growth, the smaller grain size exists, the more whiskers grow.