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Fabrication of Epitaxial fcc Co/Cu Nanostructures/Si(001)
H. M. Hwang,이재용,이현휘,H.S. Lee,이종한,J. H. Song,J. H. Kang,J.-Y. Choi,신상원 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
Isolated epitaxial Co(5 nm tCo 30 nm)/Cu nanostructures have been fabricated on a Si(001) substrate by using a nanoporous anodic aluminum-oxide (AAO) film as a mask during evaporation. The structural and the magnetic properties of the nanostructures are compared with those of asgrown films. The results of X-ray diraction confirm that both the film and the nanostructure have a fcc structure with a (001) surface and a Co[110]//Cu[110]//Si[001] crystallographic relation in the plane. The nanostructures with tCo 10 nm show clear four-fold symmetry of the remanent magnetization in the plane, but due to dipole interactions among nanodots, their values are smaller than those of films. The nanostructure with tCo = 5 nm shows isotropic hysteresis loops while the film with the same thickness shows a four-fold symmetry.
Fabrication and Structural Analysis of an Epitaixal Ni/Cu(001) Nanostructure on a Si Substrate
S. G. Lee,이재용,이현휘,H. S. Lee,J. H. Song,이종한,J.-Y. Choi,신상원 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.I
An epitaxial Ni(4.5 nm -- 100 nm)/Cu nanostructure has been fabricated on a Si(001) substrate by using nanoporous anodic aluminum oxide (AAO) as a mask during evaporation. Both the nanosized Cu and Ni layers have (001) surfaces with a Ni $<$110$>$ $//$ Cu $<$110$>$ $//$ Si $<$001$>$ in-plane relation. The Ni nanostructure is found to be less strained than the film at the same Ni thickness, which plays a crucial role in determining the magnetic anisotropy of the nanostructure. Combining a self-assembled AAO mask with a conventional evaporation method can be a potential technique, instead of traditional lithography, for the growth of various epitaxial metal nanostructures.
스퍼터링 방법에 의한 AlN / Si(111)의 성장 방향과 표면 거칠기의 성장 시간에 대한 연구
이민수(M. S. Yi),이현휘(H. H. Lee),서선희(S. H. Seo),노도영(D. Y. Noh) 한국진공학회(ASCT) 1998 Applied Science and Convergence Technology Vol.7 No.3
In-situ X선 산란 방법을 이용하여 R.F. 스퍼터링 방법에 의하여 성장시킨 AlN/Si(111) 박막의 우선 성장 방위와 표면 거칠기의 성장 시간에 따른 변화를 연구하였다 . 대부분의 성장 조건하에서 초기의 AlN 박막은 <001> 우선 성장 방위를 가지고 성장하였다. 하지만 박막의 두께가 증가함에 따라 우선 성장 방위가 많이 바뀌었는데 이 현상은 높은 기판 온도와 높은 R.F. power에서 더욱 뚜렷이 나타났다. 이러한 현상은 <001> 성장 방위를 선호하는 표면 에너지와 우선 성장 방위의 무질서도를 증가하게 하는 응력(strain) 에너지에 관련된 것으로 해석된다. 이 실험에서는 X-선 반사율을 측정하여 성장 도중의 표면 현상 또한 연구하였다. The growth orientation and the surface roughness of AlN/Si(111) films grown by radio frequency (RF) reactive magnetron sputtering were investigated using in-situ x-ray scattering technique and atomic force microscopy (AFM). AlN films were initially grown with the <001> preferred growth orientation under most growth conditions. As the film gets thicker, however, the growth orientation changes significantly, especially at high substrate temperature and high RF powers. We attribute the observed behavior to the competition between the surface energy that prefers the <001> growth orientation and the strain energy that randomizes the growth orientation. In addition, we investigated the evolution of the surface morphology during the growth using the x-ray reflectivity measurement.